• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.1
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• pp.27-34
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• 2010

In a test duct with closed configuration, particle removal performance of an edge-plate type electrostatic precipitator (ESP) was evaluated at a high flow rate in $CO_2$ rich environments by changing gap distances between collection plates, concentrations of $CO_2$, particle sizes, types of electrodes, and types of power supplies. At the same experimental conditions, collection efficiency of particles with the mean particle size, 300 nm, decreased as the gap distance and $CO_2$ concentration increased because of low electrostatic force and low discharged current. In addition, as the particle size increased, the efficiency increased because of high charging rate of the large particles. With the electrode type which has higher surface area of a discharging plate and with the power supply which applied 25 kHz-pulsed DC voltages, the removal efficiency was high even in rich $CO_2$ condition due to high electrostatic force at the same power consumption.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.108-116
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• 2002

This paper presents the measurements and evaluation of voltage waveforms due to human electrostatic discharge(ESD). The principle of operation and design rule of a new device for measuring the ESD fast transient voltages with very fast rise time were described. Peak values and rise time of ESD voltages derived from a charged human body under a variety of experimental conditions were examined. The frequency bandwidth of the proposed voltage measuring system ranges from DC to 400[㎒]. The ESD voltage waveform is nearly equal to the ESD current waveform and the peak amplitude of ESD current waveform is roughly proportional to the ESD voltage in each experimental conditions. A rapid approach results in a discharge voltage with a faster initial rise time than for a slow approach. The voltages caused by direct finger ESDs have an initial slope with a relatively long, 10∼30[ns] rise time, but the amplitude is small. On the other hand, the voltages caused by direct hand/metal ESDs have a steep initial s1ope with 1 ∼3[ns] rise time, but an initial spike is very big. As a consequence, it was found that the ESD voltage and current waveforms strongly depend on the approach speed and material of intruder. These measurement results would be useful to design the ESD protective devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.622-625
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• 2003

The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.221-224
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• 1998

A PWM inverter with an induction motor often has a problem with a high-frequency leakage current that flows through the distributed electrostatic capacitance from the motor windings to ground. This paper presents an equivalent circuit for high-frequency leakage currents in PWM inverter feeding an induction motor, which forms an LCR series resonant circuit.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• Current Industrial and Technological Trends in Aerospace
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• v.7 no.1
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• pp.68-78
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• 2009

In this paper, the electrostatic charging and discharging mechanism, and its effects in space plasma environment are reviewed and the system design control documents, ESD analysis tools and modelling techniques, and the SPIS program in Europe are introduced. A design of the satellite system against the electrostatic discharge (ESD) effects in space plasma environments is carefully taken into account at the early stage of development. In a view of the space system design, it really depended on the mission of system, electrical and mechanical configuration, system operation, and orbit condition. Behavior of the electrons and the ions in those environments may be occurred the sever problem to the satellite operation. So it is carefully understood for implementation of the satellite system. By this reason, the space environments and its effects have been comprehensively studied in U.S.A and Europe.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.193-200
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• 2004

In this study, we propose a small high voltage power supply, which uses a half-bridge ZCS resonant and Cockroft-Walton circuit as its ESP (Electrostatic Precipitator). This power supply transfers energy from the ZCS resonant inverter to the step-up transformer. The transformer secondary is then applied to the Cockroft-Walton circuit for generating high voltage as a discharging source of electrodes. It is highly efficient because its amount of switching losses are reduced by virtue of the current resonant half-bridge inverter, and also due to the small size, low parasitic capacitance in the transformer stage owing to the low number of winding turns of the step up transformer secondary combined with the Cockroft-Walton circuit. Using this power supply, experiments have been carried out as a function of the switching frequency and duty ratio in order to investigate the smoke removal characteristics. From these results, the best operational condition is obtained at the switching frequency of 9 kHz and the duty ratio of 50% in this ESP.