• Title/Summary/Keyword: Electrostatic Frequency

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Conformations, Chemical Reactivities and Spectroscopic Characteristics of Some Di-substituted Ketenes: An ab initio Study

  • Gupta, V.P.;Sharma, Archna;Agrawal, S.G.
    • Bulletin of the Korean Chemical Society
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    • v.27 no.9
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    • pp.1297-1304
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    • 2006
  • A systematic study of the structure, energetics and spectral characteristics of substituted aminoketenes $R(NH_2)$C=C=O (R = H, $CH_3$, $NH_2$, OH, $OCH_3$, CH=$CH_2$, C$\equiv$CH, CN, CHO, NO, $NO_2$) which are highly reactive and transient intermediates in synthesis has been conducted by ab initio calculations at the MP2/6- 31G*//MP2/6-31G* level. Twenty four stable isomers of the eleven substituted aminoketenes having dihedral angles $\phi NH_2\sim120{^{\circ}}$ and $60^{\circ}$ have been identified and their optimized geometries and energies obtained. Electrostatic and steric effects on the molecular geometries have been analyzed. While the $\pi$-acceptor groups lead to planar conformations, the electron-donor groups give rise to non-planar conformations. Isodesmic substituent stabilization energies relative to alkenes have been calculated and correlation with group electronegativities established. Role of induction effect by the substituent groups and resonance effects in charge distribution in the molecules has been analyzed. An analysis of the asymmetric stretching frequencies and intensities of the C=C=O group shows that affect of non-$\pi$ acceptor substituents on the frequency is determined by the field effect (F) and resonance effect (R) parameters, the calculated intensities I (km/mol.) are correlated to group electronegativities $x$ of the substituents by the relationship I = 640.2–100.1 $x$ (r = 0.92). The $\pi$-acceptor substituents increase the intensity which may be explained in terms of their delocalizing effect on the negative charge at the $C_{\beta}$ atom.

Development of Fully Integrated Broadband MMIC Chip Set Employing CSP(Chip Size Package) for K/Ka Band Applications (CSP(Chip Size Package)를 이용한 완전집적화 K/Ka 밴드 광대역 MMIC Chip Set 개발)

  • Yun Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.1 s.92
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    • pp.102-112
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    • 2005
  • In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

Dual Stage Actuator System for High Density Magnetic Disk Drives Using a Rotary-type Electrostatic Microatuator (회전구동 정전형 마이크로 액추에이터를 이용한 고트랙밀도 HDD용 이단 구동 시스템)

  • Jung Sunghwan;Choi Jae-Joon;Park Jihwang;Lee Chang-Ho;Kim Cheol-Soon;Min Dong-Ki;Kim Young-Hoon;Lee Seung-Hi;Jeon Jong Up
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.10 s.175
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    • pp.174-185
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    • 2005
  • This paper presents the design, fabrication, and testing results of a dual stage actuator system for a fine positioning of magnetic heads in magnetic disk drives. A novel rotary microactuator which is electrostatically driven and utilized as a secondary actuator was designed. The stator and rotor electrodes in the microactuator was revised to have the optimal shapes and hence produces much higher rotational torque compared with the conventional comb-shape electrodes. The microactuators were successfully fabricated using SoG(silicon on glass) processing technology, which is known as being cost-effective. The fabricated microactuator has the structural thickness of $45{\mu}m$ with the gap width of approximately $3{\mu}m$. The dynamic characteristic of microactuator/slider assembly was investigated, and its natural frequency and DC gain were measured to be 3.4kHz and 32nm/V, respectively. The microactuator/slider assembly was integrated into a HDD model V10 of Samsung Electronics Co. and a dual servo algorithm was tested to explore the tracking performance of dual stage actuator system where the LDV signals instead of magnetic head signals were used. Experimental results indicate that this system achieves the tracking accuracy of 30nm. This value corresponds to a track density of 85,000 track per inch(TPI), which is about 3 times greater than that of current hard disk drives.

Development of RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Jang, Du-Hui;Park, Min;Kim, Seon-Ho;Jeong, Seung-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.550-551
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    • 2013
  • Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

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A Fully-integrated High Performance Broadb and Amplifier MMIC for K/Ka Band Applications (K/Ka밴드 응용을 위한 완전집적화 고성능 광대역 증폭기 MMIC)

  • Yun Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1429-1435
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    • 2004
  • In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

A Design of Current-mode Buck-Boost Converter using Multiple Switch with ESD Protection Devices (ESD 보호 소자를 탑재한 다중 스위치 전류모드 Buck-Boost Converter)

  • Kim, Kyung-Hwan;Lee, Byung-Suk;Kim, Dong-Su;Park, Won-Suk;Jung, Jun-Mo
    • Journal of IKEEE
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    • v.15 no.4
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    • pp.330-338
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    • 2011
  • In this paper, a current-mode buck-boost converter using Multiple switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.5MHz oscillation frequency, and maximum efficiency 90%. Moreover, this paper proposes watchdog circuits in order to ensure the reliability and to improve the performance of dc-dc converters. An electrostatic discharge(ESD) protection circuit for deep submicron CMOS technology is presented. The proposed circuit has low triggering voltage using gate-substrate biasing techniques. Simulated result shows that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS(8.2V).

A study on the electrostatic and magnetic flux cut off effect using anti-magnetic material (반자성 물질에 의한 전자기차단효과에 관한 연구)

  • Hwang, Yoon-Taek
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.8
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    • pp.1473-1480
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    • 2008
  • Bisumus has a low melting point, making it easier to handle. This allows us to test what type of effect diamagnetism has on electro static and magnetic field shields. However, the actual materials for experimentation have only ever been manufactured cylindrically, and so there have been no recorded cases of measurements to this effect. To understand what kind of effect pure bisumus as diamagnetism has on electro static and magnetic shields in comparison to other materials, bisumus, along with copper, aluminum and iron 스텐도, were used to make a cylinder each. These cylinders were then used to measure and compare the electro static shield and magnetic shield at different bands of frequencies, starting from a low frequency. As shown on the graph/chart/diagram, the best results were recorded for copper and bisumus as diamagnetism in an electro static field. In terms of magnetic shielding, iron provided the best results, as expected, whereas bisumus displayed minimal effect.

In-situ Warpage Measurement Technique Using Impedance Variation (임피던스 변화를 이용한 실시간 기판 변형 측정)

  • Kim, Woo Jae;Shin, Gi Won;Kwon, Hee Tae;On, Bum Soo;Park, Yeon Su;Kim, Ji Hwan;Bang, In Young;Kwon, Gi-Chung
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.1
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    • pp.32-36
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    • 2021
  • The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

Study on the Charge-Transfer Complexes Formed between the Derivatives of Nitrobenzene and Some Organic Solvent Molecules (용매성 유기분자와 니트로벤젠 및 그의 유도체와의 전하전이 착물에 관한 연구)

  • Doo-Soon Shin;Si-Joong Kim
    • Journal of the Korean Chemical Society
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    • v.17 no.2
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    • pp.85-94
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    • 1973
  • The stability constants of the charge-transfer complexes formed between three derivatives of nitrobenzene, i.e., 1,3,5-trinitrobenzene, m-dinitrobenzene, nitrobenzene and eleven organic molecules such as $\alpha-picoline$, pyridine, dimethylsulfoxide, N, N'-dimethylacetamide, tetrahydrofurane, 1, 4-dioxane, diethyl ether, acetonitrile, propylene oxide, epichlorohydrine, and methyl acetate, have been determined by ultraviolet absorption spectroscopy in carbon tetrachloride solution at 25.0$^{\circ}C$. The parameters of the electrostatic effect ($E_D$) and covalent effect ($C_D$) for the eleven organic compounds have been calculated from the modified equation of the double-scale enthalpy,$logK = E_AC_A+E_DC_D$ and also the shift of C=O vibrational frequency in infrared spectra for N,N'-dimethylacetamide have been measured from the solutions of above organic compounds. The empirical equation, ${\Delta}{\nu}_{C=O} = 37.4-5.47E_D+12.1C_D$, related to the parameters and the frequency shift has been derived. It seems that the stabilities of the complexes principally depend on the covalent effect. Especially it is found that $\pi$ orbitals in molecules, in addition to the parameters, play the important role in forming the charge-transfer complexes.

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