• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.192-193
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• 2002

In this paper we investigate the phase modulation efficiency in the electrooptic phase modulator using PPpinNN GaAs/AlGaAs W-type waveguide. The phase change is affected by the refractive index change taking place inside the depletion region. The behavior of the modulator can be understood in terms of two electric field-related and two carrier-related effects linear electrooptic, quadratic electrooptic, plasma, and bandgap shift. As a result, the phase modulation efficiency was measured about 34.6($^{\circ}$/V$.$mm) for the TE polarized light. The quadratic electrooptic coefficient R 5.82${\times}$10$\^$-15/($\textrm{cm}^2$/V$^2$) is Obtained ant the Phase efficiency Caused by the quadratic electrooptic effect is about 10 times larger than that from the conventional linear electrooptic effect.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.278-284
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• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.45-45
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• 1997

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.110-114
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• 1991

A guided-wave electrooptic Mach-Zehnder interferometric modulator was fabricated on Y-cut acoustic grade LiNbO3 process. In order to reduce the electrode capacitance, serial capacitance electrode(SCE) structure was adopted. Extinction ratio more than 30dB was obtained with V$\pi$ of 4.69 volt at λ= 0.6328${\mu}{\textrm}{m}$. Frequency response was measured by using the swept frequency technique, and the bandwidth of the modulator was about 1GHz.

• 전기의세계
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• v.19 no.6
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• pp.8-12
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• 1970

A Device is described which intensity modulates a light beam at modulating frequency in the M/W region. A Method of designing a practical crystalline microwave-Freg. light modulator has been described. In addition, Electrooptic properties and operation as light modulator of NH$_{4}$H$_{2}$po$_{4}$ is described. A light path is provided through the crystal into a suitably oriented analyzer. The intensity of the light beam emerging from the latter varies at the same rate as the cavity frequency.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.68-69
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• 1998

• Macromolecular Research
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• v.13 no.6
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• pp.463-466
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• 2005

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.2
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• pp.1-6
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• 1973

Traveling wave laser phase modulator, which is consist of rectangular waveguide paritially loaded with electrooptic material, is analysed theoretically. The propagation characteristics, electric field, attenuation, and modulation index are obtained in terms of normalized parameters. It is shown that high modulation index is achieved with relatively low modulating power. And also design procedure of modulator is described with particulary refererenece to KDP.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.274-277
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• 2004

An integrated photonic radio frequency (RF) phase shifter has been proposed and fabricated using a nested dual Mach-Zehnder modulator configuration in a new electro-optic polymer. The fabricated device shows a continuous voltage control of the RF signal phase. A near-linear phase shift exceeding 108$^{\circ}$was obtained for a 16-GHz microwave signal by tuning the do control voltage over a 7.8- $V_{pp}$ range.e.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.3
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• pp.13-19
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• 1975

A detailed analysis has been carried out of a zigzag traveling wave electro-optic laser modulator usin3 CuCl, KDP Crystal. The inclusion of such practical factors as M/W and optical loss results in an optimum design in which modulator dimensions and bandwidth limitation are uniquely determined by optical and M/W dielectic properties of modulating crystal. The main conclusion of the analysis are: (1) CuCl, KDP may be used to produce 50% modulation over bandwidth of 10(GHz) with less than (watt) of modulating power. (2) The upper modulation frequency limit is set by a cutoff frequency which arises from finite width of optical beam.