• Journal of the Korea Safety Management & Science
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• v.22 no.4
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• pp.75-86
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• 2020

With the advent of the 4.0 era of logistics due to the Fourth Industrial Revolution, infrastructures have been built to receive the same services online and offline. Logistics services affected by logistics 4.0 and IT technology are rapidly changing. Logistics services are developing using technologies such as big data, artificial intelligence, blockchain, Internet of things, and augmented reality. The convergence of logistics services and various IT new technologies is accelerating, and the development of data management solution technology has led to the emergence of electronic cargo waybill to replace paper cargo waybill. The electronic waybill was developed to supplement paper waybill that lack economical and safety. However, the electronic waybill that appeared to complement the paper waybill are also in need of complementation in terms of efficiency and reliability. New research is needed to ensure that electronic cargo waybill gain the trust of users and are actively utilized. To solve this problem, electronic cargo waybill that combine blockchain technology are being developed. This study aims to improve the reliability, operational efficiency and safety of blockchain electronic cargo waybill. The purpose of this study is to analyze the blockchain-based electronic cargo waybill system and to derive evaluation indicators for system supplementation.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.493-496
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• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.351-356
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• 2014

The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.3-7
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• 2004

$HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.

• Macromolecular Research
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• v.8 no.1
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• pp.1-5
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• 2000

The valiclity of the simple mathematical model for facilitated transport in a solid state membrane developed previously has been examined againsts the carrier concentration and membrane thick-ness. Membranes are prepared with copolymer of styrene and 4-vinylpyridine as a matrix and Co(salen) as a carrier. 4-Vinylpyridine is incorporated to provide the coordination site for Co(salen) carrier. Oxygen permeability through the facilitated transport membrane is linearly increased with the square of its thick-ness, as predicted by the mathematical model. However, the oxygen permeability does not increase linearly with the carrier concentration. This seems to be due to the deactivation of the carrier by dimerization at high carrier concentrations as well as the reduced chain mobility by coordination of bulky Co(salen) carrier.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.273-281
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• 2016

This review examines computational simulations of thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. With increasing computing power and the development of several efficient simulation codes for electronic structure and transport properties calculations, we can evaluate all the thermoelectric properties within the first-principles calculations with the relaxation time approximation. This review presents the basic principles of electrical and thermal transport equations and how they evaluate properties from the first-principles calculations. As a model case, this review presents results on $Bi_2Te_3$ and Si. Even though there is still an unsolved parameter such as the relaxation time, the effectiveness of the computational simulations on the transport properties will provide much help to experimental scientist researching novel thermoelectric materials.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.121-122
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.147.4-147
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• 1998