• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.359-364
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• 2000

The paper describes the electron transport characteristics in SP$_{6}$+He gas calculated E/N values 0.1~700[Td] by the Monte Carlos simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity the electron ionization or attachment coefficients longitudinal and transverse diffusion coefficients for SF$_{6}$+He gas at a range of E/N.E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.499-501
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• 2002

본 연구에서는 ETL층으로 널리 알려져 있는 PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl) -1.3,4oxadiazole)를 HBL(Hole-blocking layer) 물질로 이용 하고 Nile red를 사용하여 적색 발광의 EL(electroluminescence) 소자를 제작 평가하였다. 일반적인 유기 EL 소자의 구조인 Anode/HTL(Hole Transport Layer)/ETL(Electron Transport Layer)/Cathode로 이루어져 있다. 여기에 HTL과 ETL사이에 HBL를 추가하여 EL 소자의 성능을 향상 시킬 수 있으면, 이러한 구조의 최종 소자를 제작 EML(emitting layer; Nile red)의 두께 및 임계전압을 달리 하여 소자 의 특성을 평가 연구 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.279-283
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• 1998

The electron swarm parameters in the$CF_4$(O.l%, 5%)+Ar mixtures are measured by time of flight method over the E/N(Td) range from 10 to 300LTdl. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been also used to study electron transport coefficients. We have calculated W, NDL, NDT, $\alpha$ and the limiting breakdown electric field to gas mixtures ratio in pure $CF_4$ gas and$CF_4+Ar$ mixtures. The measured results and the calculated results have been compared each other paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.529-532
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• 2001

We synthesized polypyrrole (PPy) by electrolysis of the pyrrole monomer solution containing support electrolyte KCl and/or p-toluene sulfonic acid sodium salt (p-TS). The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. In the case of using electrolyte p-75, the redox potential was about -0.3 V vs. Ag/AgCl reference electrode, while the potential was about 0 V for using electrolyte KCl. It is considered as the backbone forms a queue effectively by doping p-TS Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a tent of betterment of mass transport. PPy doped with p-TS has improved in mass transport, or diffusion. That is because the PPy doped with p-TS has a good orientation, and is more porous than PPy with KCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-Cl 30 ppm and X-ray Sensitivity was 0.57 pc/pixel$.$mR at 137 $\mu\textrm{m}$ x 137 $\mu\textrm{m}$ Pixel area.