• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.629-633
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• 2001

Electrical properties of the $\alpha$-In$_2$Se$_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $\alpha$-In$_2$Se$_3$ single crystal has ' the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in c-axis. The transition temperatures of the stoichiometric $\alpha$-In$_2$Se$_3$ single crystal is 198.8$^{\circ}C$ according to the specimens. The temperature of $\alpha$longrightarrow$\beta$ phase transition decreased but the temperature of $\beta$longrightarrow$\alpha$ phase transition increased as the number of heating-cooling cycle increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.30-33
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• 1994

This paper studies on the effect of DSC(Differential Scanning Calorimeter) analysis condition on the glass transition temperature of silica filled epoxy network polymer used for ultra-high voltage apparatus. The effects of temperature scanning rate specimen size and gas flow rate on measured glass transition temperature have been studied in order to select optimum thermal analysis condition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.57-64
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• 2008

This paper proposes a new test data compression scheme which has good performance. The proposed scheme is composed of adding transition stage and shifting transition stage using don't care remapping technique. The experimental results show that the new scheme provides higher compression ratio than RL-huffman encoding which is the one of the highest performance schemes, and requires smaller hardware overhead. Therefore it can be widely used as a practical solution for test data compression.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• Applied Microscopy
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• v.45 no.3
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• pp.119-125
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• 2015

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.348-348
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• 2011

We present the interfacial electronic structures of electrodeposited Cu and Fe on bare and 1,4-phenylene diisocyanide (PDI)-functionalized Au nanoisland templates (NITs), and Au and Ag nanoparticles on transition metal oxide supports. Our discussion is based on the depth-profiling X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.445-450
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• 2024

The expansion of lithium-ion battery usage beyond portable electronic devices to electric vehicles and energy storage systems is driven by their high energy density and favorable cycle characteristics. Enhancing the stability and performance of these batteries involves exploring solid electrolytes as alternatives to liquid ones. While sulfide-based solid electrolytes have received significant attention for commercialization, research on amorphous-phase glass solid electrolytes in oxide-based systems remains limited. Here, we investigate the glass transition temperatures and sintering behaviors by changing the molecular ratio of Li₂O/B₂O₃ in borate glass comprising Li₂O-B₂O₃-Al₂O₃ system. The glass transition temperature is decreasing as increasing the amount of Li₂O. When we sintered at 450℃, just above the glass transition temperature, the samples did not consolidate well, while the proper sintered samples could be obtained under the higher temperature. We successfully obtained the borate glass ceramics phases by melt-quenching method, and the sintering characteristics are investigated. Future studies could explore optimizing ion conductivity through refining processing conditions, adjusting the glass former-to-modifier ratio, and incorporating additional Li salt to enhance the ionic conductivity.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.737-742
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• 2014

The vibronic emission spectra of isomeric trimethylbenzyl radicals were reassigned based on substituent effect on electronic transition energy as well as ab initio calculation of the benzyl radical. The electronic transition energy of three isomeric jet-cooled trimethylbenzyl radicals produced by corona discharge of 1,2,3,5-tetramethylbenzene were analyzed using the empirical data of three isomeric methylbenzyl radicals. Calculated data were obtained by summing up the shifts measured from methylbenzyl radicals as well as taking the position and alignment of substituents on the benzene ring into account. The revised assignments show better agreement with observation, and rationalize the validity of the model developed to explain the substituent effect on electronic transition energy of benzyl radicals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.239-243
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• 1996

In this paper, we have tried to focus on the optimum conditions of crystal structure parameters on YBCO high Tc oxide-superconductor as an excel lent electronic parts. When we verify the characteristic improvement of superconductance and accurate reproduction and so forth, we have made use of RIETAN. We have varied the lattice constant with oxygen content from 6.0 to 7.0 as for transition of orthogonal structure and tetragonal structure for the superconductor. As the result of above, we have preyed that transition from orthogonal structure to tetragonal structure is made at the point of 6.6(oxygen content) by using the simulation.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.153-158
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• 2012

The hydrogenation of $AlB_2$-type BaGaGe exhibits a metal to insulator (MI) transition, inducing a puckering distortion of the original hexagonal [GaGe] layers. We investigate the electronic structure changes associated with the hydrogen-induced MI transition, using extended H$\ddot{u}$ckel tight-binding band calculations. The results indicate that hydrogen incorporation in the precursor BaGaGe is characterized by an antibonding interaction of $\pi$ on GaGe with hydrogen 1s and the second-order mixing of the singly occupied antibonding $\pi^*$ orbital into it, through Ga-H bond formation. As a result, the fully occupied bonding $\pi$ band in BaGaGe changes to a weakly dispersive band with Ge pz (lone pair) character in the hydride, which becomes located just below the Fermi level. The Ga-Ge bonds within a layered polyanion are slightly weakened by hydrogen incorporation. A rationale for this is given.