• Title/Summary/Keyword: Electronic structure

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Design of 128 point pipelined FFT processor with 4-way structure (4-way 구조를 갖는 128 point 파이프라인 FFT 프로세서의 설계)

  • Lee, Sang-Min;Cho, Un-Sun;Lee, Seong-Joo;Kim, Jae-Seok
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.651-652
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    • 2006
  • In this paper, 4-way data path 128 point pipelined FFT processor with 4-way structure is proposed. The proposed FFT processor has 4-way structure in order to meet data requirement of MB-OFDM system at 132MHz operating frequency. The FFT processor is based on R4MDC and extended to suit 4-way data path. The FFT processor is designed by Verilog HDL and the gate count is about 88k.

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Electronic Structures and Physical Properties of the Ordered and Disordered $Ni_2$MnGa Alloy Films

  • Kim, K. W.;Lee, N. N.;Y. Y. Kudryavtsev;Lee, Y. P.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.104-106
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    • 2003
  • In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.

Proposal for a Wavelength-Independent Optical Sensor Based on an Asymmetric Mach-Zehnder Interferometer

  • Luo, Yanxia;Yin, Rui;Ji, Wei;Huang, Qingjie;Gong, Zisu;Li, Jingyao
    • Current Optics and Photonics
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    • v.4 no.6
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    • pp.558-565
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    • 2020
  • A wavelength-independent optical sensor based on an asymmetric Mach-Zehnder interferometer (AMZI) is proposed. The optical sensor based on an AMZI is very sensitive to wavelength, and wavelength drift will lead to measurement error. The optical sensor is compensated to reduce its dependence on wavelength. The insensitivity of the optical sensor to wavelength mainly depends on the compensation structure, which is composed of an AMZI cascaded with another AMZI and can compensate the wavelength drift. The influence of wavelength drift on the optical sensor can be counteracted by carefully designing the size parameters of the compensation structure. When the wavelength changes from 1549.9 nm to 1550.1 nm, the error after compensation can be lower than 0.066%. Furthermore, the effect of fabrication tolerance on compensation results is analyzed. The proposed compensation method can also be used to compensate the drift of other parameters such as temperature, and can be applied to the compensation of other interference-based optical devices.

I-Q Channel 12bit 1GS/s CMOS DAC for WCDMA (WCDMA 통신용 I-Q 채널 12비트 1GS/s CMOS DAC)

  • Seo, Sung-Uk;Shin, Sun-Hwa;Joo, Chan-Yang;Kim, Soo-Jae;Yoon, Kwang-S.
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.1
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    • pp.56-63
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    • 2008
  • This paper describes a 12 bit 1GS/s current mode segmented DAC for WCDMA communication. The proposed circuit in this paper employes segmented structure which consists of 4bit binary weighted structure in the LSB and 4bit thermometer decoder structure in the mSB and MSB. The proposed DAC uses delay time compensation circuits in order to suppress performance decline by delay time in segmented structure. The delay time compensation circuit comprises of phase frequency detector, charge pump, and control circuits, so that suppress delay time by binary weighted structure and thermometer decoder structure. The proposed DAC uses CMOS $0.18{\mu}m$ 1-poly 6-metal n-well process, and measured INL/DNL are below ${\pm}0.93LSB/{\pm}0.62LSB$. SFDR is approximately 60dB and SNDR is 51dB at 1MHz input frequency. Single DAC's power consumption is 46.2mW.

A Study on Restructuring of the Marine Products Value Chain and the Development of E-commerce Trading Systems in the Ubiquitous Environment (유비쿼터스 환경에서의 해양수산물 유통 가치사슬 혁신 및 전자상거래 시스템 구축에 관한 연구)

  • Pak, Myong-Sop;Kim, Jong-Uk;Lee, Won-Jun;Park, Sang-Cheol
    • Journal of Information Technology Services
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    • v.5 no.2
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    • pp.125-136
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    • 2006
  • In general, the distribution structure of marine products is very vulnerable to the uncertainties in the process from the production to the sale, and a lot of difficulty is thus inevitable in the supply control. Such a distribution structure is a very critical issue in securing the suability of marine products through systematic quality and hygiene control of marine products, and it is thus time to discuss the method to innovate and restructuring the distribution structure of marine products. From this point of view, this study approached the flow from production to consumption in view of SCM(supply chain management) beyond the partial discussion conducted so far for the distribution structure in the field of marine products. Further, this study suggested the establishment of electronic commerce systems with a traceability system built in RFID for marine products as an alternative of redesigning distribution infrastructure in the ubiquitous environment. From the results, we assured that such an electronic commerce system would be a new measure to improve the structure currently causing inefficiency and excessive distribution cost for the distribution structure of marine products.

Partial H-plane Filter with Periodic Structure (주기 구조를 이용한 Partial H-plane Filter)

  • Kim Dong-Jin;Chung Woo-Sung;Lee Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.8 s.111
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    • pp.746-752
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    • 2006
  • In this paper, a compact partial H-plane filter with periodic structure is proposed. Guided wavelength of periodic structure' is reduced by slow wave effect. Cross-section and length of partial H-plane filter with periodic structure are considerably reduced by 75% and 30%, respectively, as compared with conventional E-plane filter. In addition, spurious responses of the bandpass filter are improved. To design bandpass filter with periodic structure, we have analyzed a periodic structure of partial H-plane waveguide and derived equations of the periodic filter. Measured results are in good agreement with simulated results.

Electronic Structure and Bonding in the Ternary Silicide YNiSi3

  • Sung, Gi-Hong;Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
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    • v.24 no.3
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    • pp.325-333
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    • 2003
  • An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

Genetically Optimized Fuzzy Polynomial Neural Networks Based on Fuzzy Set (퍼지집합 기반 진화론적 최적 퍼지다항식 뉴럴네트워크)

  • Park, Byoung-Jun;Park, Keon-Jun;Oh, Sung-Kwun
    • Proceedings of the KIEE Conference
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    • 2003.07d
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    • pp.2633-2635
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    • 2003
  • In this study, we propose a fuzzy polynomial neural networks (FPNN) and a genetically optimized fuzzy polynomial neural networks(GoFPNN) for identification of non-linear system. GoFPNN architecture is designed by a FPNN based on fuzzy set and its structure and parameters are optimized by genetic algorithms. A fuzzy neural networks(FNN) based on fuzzy set divide into two structures that is simplified inference structure and linear inference structure. The proposed FPNN is resulted from integration and extension of simplified and linear inference structure of FNN. The consequence structure of the FPNN consist of polynomials represented by networks using connection weights for rules. The networks comprehend simplified(Type 0), linear (Type 1), and quadratic(Type 3) inferences. The proposed FPNN can select polynomial type of consequence part for each rule. Therefore, proposed scheme can offer flexible structure design capability for a system characteristics. Moreover, GAs is applied to networks structure and parameters tuning of proposed FPNN, and its efficient application method is discussed, these subjects are result in GoFPNN that is optimal FPNN. To evaluate proposed model performance, a numerical experiment is carried out.

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B20 Crystal Structure and Electromagnetic Property of MnGe and MnSi (B20 결정구조와 MnGe와 MnSi의 전자구조 및 자기적 특성)

  • Jeong, Tae Seong
    • Korean Journal of Materials Research
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    • v.29 no.8
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    • pp.477-482
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    • 2019
  • The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

Thermomechanical Analysis of Functionally Gradient Al-$SiC_{p}$ Composite for Electronic Packaging (전자패키지용 경사조성 Al-$SiC_{p}$ 복합재료의 열 . 기계적 변형특성 해석)

  • 송대현;최낙봉;김애정;조경목;박익민
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2000.04a
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    • pp.175-183
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    • 2000
  • The internal residual stresses within the multilayered structure with shan interface induced by the difference in thermal expansion coefficient between the materials of adjacent layers often provide the source of failure such as delamination of interfaces and etc. Recent development of the multilayered structure with functionally graded interface would be the solution to prevent this kind of failure. However a systematic thermo-mechanical analysis is needed fur the customized structural design of multilayered structure. In this study, theoretical model for the thermo-mechanical analysis is developed for multilayered structures of the Al-$SiC_p$ functionally graded composite for electronic packaging. The evolution of curvature and internal stresses in response to temperature variations is presented for the different combinations of geometry. The resultant analytical solutions are used for the optimal design of the multilayered structures with functionally graded interface as well as with sharp interface.

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