• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.4 s.316
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• pp.42-47
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• 2007

To reduce the chattering errors of reed switch sensors in the automatic remote measurement of water meter a reed switch sensor was analyzed and improved. The operation of reed switch sensors can be described as a mechanical contact switch by approximation of permanent magnet piece to generate an electrical pulse. The reed switch sensors are used mostly in measurement application to detect the rotational or translational displacement. To apply for water flow measurement devices, the reed switch sensors should keep high reliability. They are applied for the electronic digital type of water flow meters. The reed switch sensor is just mounted simply on the conventional mechanical type flow meter. A small magnet is attached on a pointer of the water meter counter rotor. Inside the reed sensor two steel leaf springs make mechanical contact and apart repeatedly as rotation of flow meter counter. The counting electrical contact pulses can be converted as the water flow amount. The MCU sends the digital flow rate data to the server using the wireless communication network. But the digital data is occurred difference or won by chattering noise. The reed switch sensor contains chattering error by it self at the force equivalent position. The vibrations such as passing vehicle near to the switch sensor installed location causes chattering. In order to reduce chattering error, most system uses just software methods, for example using filter algorithm and also statistical calibration methods. The chattering errors were reduced by changing leaf spring structure using mechanical characteristics.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.270-274
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• 2017

Formic acid has been known as one of key sources of hydrogen. Among various monometallic catalysts, hydrogen can be efficiently produced on Pd catalyst. However, the catalytic activity of Pd is gradually reduced by the blocking of active sites by CO, which is formed from the unwanted indirect oxidation of formic acid. One of promising solutions to overcome such issue is the design of alloy catalyst by adding other metal into Pd since alloying effect (such as ligand and strain effect) can increase the chance to mitigate CO poisoning issue. In this study, we have investigated formic acid deposition on the bimetallic $Pd/Pd_3Fe$ core-shell nanocatalyst using DFT (density functional theory) calculation. In comparison to Pd catalyst, the activation energy of formic acid dehydrogenation is greatly reduced on $Pd/Pd_3Fe$ catalyst. In order to understand the importance of alloying effects in catalysis, we decoupled the strain effect from ligand effect. We found that both strain effect and ligand effect reduced the binding energy of HCOO by 0.03 eV and 0.29 eV, respectively, compared to the pure Pd case. Our DFT analysis of electronic structure suggested that such decrease of HCOO binding energy is related to the dramatic reduction of density of state near the fermi level.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.77-82
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• 2011

The use of soft magnetic materials have been increasing in the various industrial fields according to the increasing demand for high performance, automatic, miniaturing equipments in the recent our life. In this study, we investigated the effect of factors on the core loss and magnetic properties of electrical steel and soft magnetic composites. Furthermore, we reviewed the major efforts to reduce the core loss and improve the soft magnetic properties in the two main soft magnetic materials. Domain purification which results from reduced density of defects in cleaner electrical steels is combined with large grains to reduce hysteresis loss. The reduced thickness and the high electrical conductivity reduce the eddy current component of loss. Furthermore, the coating applied to the surface of electrical steel and texture control lead to improve high permeability and low core loss. There is an increasing interest in soft magnetic composite materials because of the demand for miniaturization of cores for power electronic applications. The SMC materials have a broad range of potential applications due to the possibility of true 3-D electromagnetic design and higher frequency operation. Grain size, sintering temperature, and the degree of porosity need to be carefully controlled in order to optimize structure-sensitive properties such as maximum permeability and low coercive force. The insulating coating on the powder particles in SMCs eliminates particle-to-particle eddy current paths hence minimizing eddy current losses, but it reduces the permeability and to a small extent the saturation magnetization. The combination of new chemical composition with optimum powder manufacturing processes will be able to result in improving the magnetic properties in soft magnetic composite materials, too.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.71-80
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• 2007

This paper describes an efficient hardware design of WiBro security processor (WBSec) supporting for the security sub-layer of WiBro wireless internet system. The WBSec processor, which is based on AES (Advanced Encryption Standard) block cipher algorithm, performs data oncryption/decryption, authentication/integrity, and key encryption/decryption for packet data protection of wireless network. It carries out the modes of ECB, CTR, CBC, CCM and key wrap/unwrap with two AES cores working in parallel. In order to achieve an area-efficient implementation, two design techniques are considered; First, round transformation block within AES core is designed using a shared structure for encryption/decryption. Secondly, SubByte/InvSubByte blocks that require the largest hardware in AES core are implemented using field transformation technique. It results that the gate count of WBSec is reduced by about 25% compared with conventional LUT (Look-Up Table)-based design. The WBSec processor designed in Verilog-HDL has about 22,350 gates, and the estimated throughput is about 16-Mbps at key wrap mode and maximum 213-Mbps at CCM mode, thus it can be used for hardware design of WiBro security system.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.144-148
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• 2006

$CoGa_{0.1}Fe_{1.9}O_4$ nanoparticles have been prepared by a sol-gel method. The structural and magnetic properties have been investigated by XRD, SEM, VSM and $M\ddot{o}ssbauer$ spectroscopy. $CoGa_{0.1}Fe_{1.9}O_4$ powder that was annealed at $250^{\circ}C$ has spinel structure and behaved superparamagnetically. The estimated size of superparammagnetic $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle is around 10 nm. The hyperfine fields at 4.2 K f3r the A and B patterns were found to be 518 and 486 kOe, respectively. The blocking temperature $(T_B)$ of superparammagnetic $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle is about 250 K. The magnetic anisotropy constant of $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle was calculated to be $3.0X10^5\;ergs/cm^3$. $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle was annealed at $250^{\circ}C$ will be used to candidate for biomedicine applications as magnetic carriers.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.172-177
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• 2007

In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

• Economic and Environmental Geology
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• v.42 no.5
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• pp.479-486
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• 2009

In natural environments, manganese (Mn) exists in the valence of +2, +3, and +4 and plays a pivotal role as a strong oxidant or reductant in the geochemical cycles of elements. Especially, Mn forms varying (oxyhydr)oxides. The oxidation state of structural Mn is characteristic to each oxide and is one of the most important factors controlling its geochemical behaviors such as solubility, sorption capacity, and redox potential. Therefore, it is important to elucidate processes governing Mn oxidation state in predicting the fate and transport of many redox sensitive elements in the environment. X-ray photoelectron spectroscopy (XPS) is a very useful method to determine the oxidation state of various elements in solid phases. In this study, the oxidation states of structural Mn in MnO, $Mn_2O_3$, $MnO_2$ were assessed based on the binding energy spectra of $Mn2p_{3/2}$ and Mn3s using XPS and were compared with those reported elsewhere. $Mn2p_{3/2}$ binding energies were determined as 640.9, 641.5, 641.8 eV for MnO, $Mn_2O_3$, $MnO_2$, respectively, which indicates that the binding energy increased with increasing Mn oxidation state. It was also noted that Ar etching may cause changes in electronic structure configuration on surface of the original sample.