• 제목/요약/키워드: Electronic structure

검색결과 6,436건 처리시간 0.048초

4-way 구조를 갖는 128 point 파이프라인 FFT 프로세서의 설계 (Design of 128 point pipelined FFT processor with 4-way structure)

  • 이상민;조언선;이성주;김재석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.651-652
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    • 2006
  • In this paper, 4-way data path 128 point pipelined FFT processor with 4-way structure is proposed. The proposed FFT processor has 4-way structure in order to meet data requirement of MB-OFDM system at 132MHz operating frequency. The FFT processor is based on R4MDC and extended to suit 4-way data path. The FFT processor is designed by Verilog HDL and the gate count is about 88k.

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Electronic Structures and Physical Properties of the Ordered and Disordered $Ni_2$MnGa Alloy Films

  • Kim, K. W.;Lee, N. N.;Y. Y. Kudryavtsev;Lee, Y. P.
    • 한국진공학회지
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    • 제12권S1호
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    • pp.104-106
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    • 2003
  • In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.

Proposal for a Wavelength-Independent Optical Sensor Based on an Asymmetric Mach-Zehnder Interferometer

  • Luo, Yanxia;Yin, Rui;Ji, Wei;Huang, Qingjie;Gong, Zisu;Li, Jingyao
    • Current Optics and Photonics
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    • 제4권6호
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    • pp.558-565
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    • 2020
  • A wavelength-independent optical sensor based on an asymmetric Mach-Zehnder interferometer (AMZI) is proposed. The optical sensor based on an AMZI is very sensitive to wavelength, and wavelength drift will lead to measurement error. The optical sensor is compensated to reduce its dependence on wavelength. The insensitivity of the optical sensor to wavelength mainly depends on the compensation structure, which is composed of an AMZI cascaded with another AMZI and can compensate the wavelength drift. The influence of wavelength drift on the optical sensor can be counteracted by carefully designing the size parameters of the compensation structure. When the wavelength changes from 1549.9 nm to 1550.1 nm, the error after compensation can be lower than 0.066%. Furthermore, the effect of fabrication tolerance on compensation results is analyzed. The proposed compensation method can also be used to compensate the drift of other parameters such as temperature, and can be applied to the compensation of other interference-based optical devices.

WCDMA 통신용 I-Q 채널 12비트 1GS/s CMOS DAC (I-Q Channel 12bit 1GS/s CMOS DAC for WCDMA)

  • 서성욱;신선화;주찬양;김수재;윤광섭
    • 대한전자공학회논문지SD
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    • 제45권1호
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    • pp.56-63
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    • 2008
  • 본 논문에서는 WCDMA 통신용 송신기에 적용 가능한 12비트 1GS/s 전류구동 방식의 혼합형 DAC를 설계하였다. 제안된 DAC는 혼합형 구조로써 하위 4비트는 이진 가중치 구조, 중간비트와 상위비트는 4비트 온도계 디코더 구조로 12비트를 구성하였다. 제안된 DAC는 혼합형 구조에서 발생되는 지연시간에 따른 성능 저하를 개선하기 위해 지연시간보정 회로를 사용하였다. 지연시간보정 회로는 위상주파수 검출기, 전하펌프, 제어회로로 구성되어 이진 가중치 구조와 온도계 디코더 구조에서 발생하는 지연시간을 감소시킨다. 제안한 DAC는 CMOS $0.18{\mu}m$ 1-poly 6-metal n-well 공정을 사용하여 제작되었고 측정된 INL/DNL은 ${\pm}0.93LS/$ 0.62LSB 이하로 나타났다. 입력 주파수 1MHz에서 SFDR은 약 60dB로 측정되었고 SNDR은 51dB로 측정되었다. 단일 DAC의 전력소모는 46.2mW로 나타났다.

유비쿼터스 환경에서의 해양수산물 유통 가치사슬 혁신 및 전자상거래 시스템 구축에 관한 연구 (A Study on Restructuring of the Marine Products Value Chain and the Development of E-commerce Trading Systems in the Ubiquitous Environment)

  • 박명섭;김종욱;이원준;박상철
    • 한국IT서비스학회지
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    • 제5권2호
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    • pp.125-136
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    • 2006
  • In general, the distribution structure of marine products is very vulnerable to the uncertainties in the process from the production to the sale, and a lot of difficulty is thus inevitable in the supply control. Such a distribution structure is a very critical issue in securing the suability of marine products through systematic quality and hygiene control of marine products, and it is thus time to discuss the method to innovate and restructuring the distribution structure of marine products. From this point of view, this study approached the flow from production to consumption in view of SCM(supply chain management) beyond the partial discussion conducted so far for the distribution structure in the field of marine products. Further, this study suggested the establishment of electronic commerce systems with a traceability system built in RFID for marine products as an alternative of redesigning distribution infrastructure in the ubiquitous environment. From the results, we assured that such an electronic commerce system would be a new measure to improve the structure currently causing inefficiency and excessive distribution cost for the distribution structure of marine products.

주기 구조를 이용한 Partial H-plane Filter (Partial H-plane Filter with Periodic Structure)

  • 김동진;정우성;이정해
    • 한국전자파학회논문지
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    • 제17권8호
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    • pp.746-752
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    • 2006
  • 본 논문에서는 주기 구조를 이용한 소형화된 partial H-plane필터를 제안하였다. 주기 구조의 관내 파장은 저속파의 영향으로 인해 그 크기가 줄어든다. 주기 구조를 이용한 partial H-plane 필터는 일반적인 E-plane 필터보다 단면적과 길이가 각각 75%, 30% 축소되었다. 또한 대역 통과 필터의 스퓨리어스 응답 특성이 향상되었다. 주기 구조를 이용한 대역 통과 필터를 설계하기 위해 partial H-plane 도파로의 주기 구조가 해석되었고, 설계식이 유도되었다. 측정된 결과는 시뮬레이션 결과와 잘 일치함을 확인할 수 있었다.

Electronic Structure and Bonding in the Ternary Silicide YNiSi3

  • Sung, Gi-Hong;Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
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    • 제24권3호
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    • pp.325-333
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    • 2003
  • An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

퍼지집합 기반 진화론적 최적 퍼지다항식 뉴럴네트워크 (Genetically Optimized Fuzzy Polynomial Neural Networks Based on Fuzzy Set)

  • 박병준;박건준;오성권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 D
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    • pp.2633-2635
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    • 2003
  • In this study, we propose a fuzzy polynomial neural networks (FPNN) and a genetically optimized fuzzy polynomial neural networks(GoFPNN) for identification of non-linear system. GoFPNN architecture is designed by a FPNN based on fuzzy set and its structure and parameters are optimized by genetic algorithms. A fuzzy neural networks(FNN) based on fuzzy set divide into two structures that is simplified inference structure and linear inference structure. The proposed FPNN is resulted from integration and extension of simplified and linear inference structure of FNN. The consequence structure of the FPNN consist of polynomials represented by networks using connection weights for rules. The networks comprehend simplified(Type 0), linear (Type 1), and quadratic(Type 3) inferences. The proposed FPNN can select polynomial type of consequence part for each rule. Therefore, proposed scheme can offer flexible structure design capability for a system characteristics. Moreover, GAs is applied to networks structure and parameters tuning of proposed FPNN, and its efficient application method is discussed, these subjects are result in GoFPNN that is optimal FPNN. To evaluate proposed model performance, a numerical experiment is carried out.

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B20 결정구조와 MnGe와 MnSi의 전자구조 및 자기적 특성 (B20 Crystal Structure and Electromagnetic Property of MnGe and MnSi)

  • 정태성
    • 한국재료학회지
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    • 제29권8호
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    • pp.477-482
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    • 2019
  • The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

전자패키지용 경사조성 Al-$SiC_{p}$ 복합재료의 열 . 기계적 변형특성 해석 (Thermomechanical Analysis of Functionally Gradient Al-$SiC_{p}$ Composite for Electronic Packaging)

  • 송대현;최낙봉;김애정;조경목;박익민
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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    • pp.175-183
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    • 2000
  • The internal residual stresses within the multilayered structure with shan interface induced by the difference in thermal expansion coefficient between the materials of adjacent layers often provide the source of failure such as delamination of interfaces and etc. Recent development of the multilayered structure with functionally graded interface would be the solution to prevent this kind of failure. However a systematic thermo-mechanical analysis is needed fur the customized structural design of multilayered structure. In this study, theoretical model for the thermo-mechanical analysis is developed for multilayered structures of the Al-$SiC_p$ functionally graded composite for electronic packaging. The evolution of curvature and internal stresses in response to temperature variations is presented for the different combinations of geometry. The resultant analytical solutions are used for the optimal design of the multilayered structures with functionally graded interface as well as with sharp interface.

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