• Journal of Power Electronics
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• v.13 no.5
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• pp.746-756
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• 2013

The modularized subunit of an electronic power transformer (EPT) is a series connection of two H-bridge voltage-source converters and a DC-DC converter with a high-frequency isolation transformer (HFIT). On the basis of cascading and paralleling the modularized subunits, EPT can be used in high-voltage and large-current applications in the power system. This paper discusses the steady state analysis of the modularized subunit of EPT. Theoretical analysis considers the influences of the two H-bridge voltage-source converters on the two sides of the DC-DC converter. We deduce the formulas of the theoretical calculation on the internal electrical characteristics of EPT (e.g., the voltages of the DC-bus capacitor and the primary side peak current of the HFIT). This paper provides guidance on the design and selection of EPT key elements (e.g., the DC-bus capacitors and HFIT). Experimental results are obtained from a single subunit of a laboratory model rated at 962 V, 15 kVA. All calculations, simulations, and experiments confirm the theoretical analysis of the subunit of EPT.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.306-313
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• 2012

In order to enhance the isolation level between two dual-band E-slot microstrip patch antennas, EBG structure which operates in UMTS Tx(1.92~1.98 GHz) and Rx(2.11~2.17 GHz) band is proposed. The proposed EBG structure made with a periodic array of two different size EBG unit cells which has a modified mushroom-type for isolation improvement between two antennas. They do not share a common ground plane of the microstrip patch antenna. Overall size of the fabricated antenna is $210.5mm{\times}117mm$. The two different EBG unit cell sizes are $15.6mm{\times}4mm$ and $17.4mm{\times}4mm$, respectively. It was etched on the FR-4 substrate(thickness=3.93 mm, ${\varepsilon}_r$=4.6). The experiment results show that the isolation level between antennas in Tx/Rx band were improved by about 9 dB and 12 dB, respectively, through the use of the proposed EBG structure.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.9
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• pp.987-992
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• 2015

In this paper, neutralization line structure have been employed to improve the isolation between the MIMO antenna system. The proposed MIMO antenna size is $116mm{\times}64mm{\times}5mm$ and designed on FR-4(${\varepsilon}r=4.4$) ground substrate. Neutralization line was applied to enhance isolation between the each antenna elements. The fabricated antenna satisfied a VSWR below 3 in LTE band B13 and the isolation between the MIMO antenna system is presented below -15dB. On the H-plane, antenna shows an omnidirectional pattern. In LTE band B13, the antenna presents a gain of a -2.6dBi ~-1.18dBi and radiation efficiency of 33.49% ~ 46.45%. Comparing measurement result with the outcome of simulation, the proposed MIMO antenna is expected to be applied for mobile application.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.4
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• pp.771-780
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• 2024

In this study, we implemented a real-time pest detection and prediction system for a strawberry farm using a computer vision model based on the YOLOv5 architecture and an Isolation Forest Classifier. The model performance evaluation showed that the YOLOv5 model achieved a mean average precision (mAP 0.5) of 78.7%, an accuracy of 92.8%, a recall of 90.0%, and an F1-score of 76%, indicating high predictive performance. This system was designed to be applicable not only to strawberry farms but also to other crops and various environments. Based on data collected from a tomato farm, a new AI model was trained, resulting in a prediction accuracy of over 85% for major diseases such as late blight and yellow leaf curl virus. Compared to the previous model, this represented an improvement of more than 10% in prediction accuracy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.1-5
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• 2001

STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.183-188
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• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.119-122
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• 1987

By cascading the step discontinuities on planar dielectric waveguides with a ferrite layer through two uniform planar dielectric waveguides, nonreciprocal scaterring characteristics of planar dielectric waveguide gratings are analyzed. The calculated results at 35GHz shows that the isolation mechanism takes place near band stop frequency range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.759-765
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• 2005

In this paper, developed isolator for gap filler is analyzed and designed using the simulation tool. Using the designed parameters, isolator is fabricated and tested in gap filler band. Temperature characteristics of isolator depend on magnet, YIG ferrite, and conductor etc. These require temperature stability and possible method of compensation for the temperature dependent effects. The temperature stabilization tries to use Ni-alloy. Developed isolator that compare with room temperature and high temperature characteristics has change fewer than 20 MHz. Implemented isolator shows more than 20 dB isolation characteristic at center frequency(2,650 MHz) and has 0.2 dB insertion loss in overall 100 MHz operating bandwidth. Return losses of input and output port are measured below -20 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.