• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.201-204
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• 2001

LDMOSFET devices operated at low temperature have applications on satellite, space shuttle and low temperature system, etc. In this study, we measured the electrical characteristics of 100v Class LDMOSFET for low temperature application. Measurement data are taken over a wide range of temperatures (100K-300K) and various drift region lengths(6.6${\mu}{\textrm}{m}$, 8.4${\mu}{\textrm}{m}$, 12.6${\mu}{\textrm}{m}$). Maximum transconductance, $g_{m}$ and drain current at low temperatures(~100K) increased over about 260%, 50% respectively, in comparison with the data at room temperature. Breakdown voltage B $V_{ds}$, and specific on- resistance decreased. Besides, ratio $R_{on}$ BV, a figure of merit of the device, decreased with decreasing temperature.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.239-242
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• 1999

In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8${\mu}{\textrm}{m}$ design rule, the high voltage bipolar with 40V breakdown voltage for analog signal processing, the high speed bipolar with cut-off frequency over 20㎓ and LDD NMOS for high density were proposed and simulated on a single chip by the simulator DIOS and DESSIS. And we extracted the process/device parameters of the simulated devices.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.330-334
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• 2014

In this paper, we present an incoherent dual-parallel modulation linearized optical link employing two different optical wavelengths. Comparing with previous dual-parallel modulation, this linearization method prevents the recreation of distortion products and can be readily implemented. Furthermore, a dual-wavelength dual-parallel modulation linearized optical link constructed with the commercially available devices is experimentally demonstrated with a spurious-free dynamic range of $122.5dB.Hz^{4/5}$. More than 25 dB suppression of the intermodulation distortion, 15.6 dB improvement of spurious-free dynamic range and 1.5 dB improvement of compression dynamic range are achieved after linearization.

• Carbon letters
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• v.10 no.2
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• pp.87-89
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• 2009

Carbon nanotubes, consisting of rolled graphene layer built from $sp^2$ units, have attracted the imagination of scientists as ideal macromolecules and their unusual physical and chemical properties make them useful in the fabrication of nanocomposites, nano-electronic devices and sensors etc. In this account, the current status and prospect of carbon nanotubes is described with a special emphasis on the safety issue of carbon nanotubes. Even though many challenges to be solved remain, extensive and intensive efforts in both academy and industry will clear out those problems soon and finally enable carbon nanotubes to play a key innovative material of 21st century in numerous industrial processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.1-8
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• 2000

Automotive electronics as we know it today encompasses a wide variety of devices and systems. Key to them all, and those yet to come. is the ability to sense and measure accurately automotive control parameters. In other words, sensors and actuators are the heart of any automotive electronics application. The important of sensors and actuators cannot be overemphasized. The future growth of automotive electronics is arguably more dependent on sufficiently accurate and low-cost sensors and actuators than on computers, controls, displays, and other technologies. Without them, all of controls system - engine. transmission. cruise, braking, traction, suspension, steering, lighting, windshield wipers, air conditioner/hearter - would not be possible. Those controls, of course, are key to car operation and they have made cars over the years more drivable, safe, and reliable. In this lecture, the principle and future trends of electronic control gasoline engine will be discuss.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Journal of Electrical Engineering and Technology
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• v.5 no.3
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• pp.415-422
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• 2010

The distributed flexible alternative current transmission system (D-FACTS) is a recently developed FACTS technology. Distributed Static Series Compensator (DSSC) is one example of DFACTS devices. DSSC functions in the same way as a Static Synchronous Series Compensator (SSSC), but is smaller in size, lower in price, and possesses more capabilities. Likewise, DSSC lies in transmission lines in a distributed manner. In this work, we designed a fuzzy logic controller to use the DSSC for enhancing transient stability in a two-machine, two-area power system. The parameters of the fuzzy logic controller are varied widely by a suitable choice of membership function and parameters in the rule base. Simulation results demonstrate the effectiveness of the fuzzy controller for transient stability enhancement by DSSC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.16-17
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• 2005

Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.