• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.247-250
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• 2002

SAW filters were fabricated on $LiNbO_3$ substrates to evaluate frequency response and properties of photolithography. In the both of etch and lift-off methods, lift off method was superior to etch method in fabrication process. Frequency response property was measured by network analyzer. From measurement of acoustic property, SAW propagation velocity was 3574.9m/sec for $LiNbO_3$ SAW filter.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.601-602
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• 2007

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.211-213
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• 2005

[$SiO_2$] film coated as a passivation layer for YBCO based electronic devices is investigated by measuring the micro wave properties of micro strip line resonators. The $SiO_2$ film coated resonators are compared with coated resonators for two degradation conditions, a $200^{\circ}C$ annealing in air and an exposure to air at $85^{\circ}C\;85\%$ relative humidity. The $SiO_2$ film reduces the YBCO thin film degradation caused by oxygen stoichiometry change and reaction with water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.13-17
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• 1996

Superthin ONO ( oxide -nitride - oxide ) structures were fabricated for the MONOS nonvolatile memory device with a 20$\AA$ tunneling oxide, 40$\AA$ nitride and 40$\AA$ blocking oxide. The compositions of each layer in a superthin ONO structure were investigated. Also, the characteristics of trap related to the memory quality were examined.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.97-100
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• 2005

Dynamic response of organic light-emitting diodes were analyzed in $ITO/Alq_3$(100 nm)/Al device structure with a variation of voltage an frequency. At low frequency region, complex impedance is mostly governed by resistive component, and at high frequency region by capacitive component. Also, we have evaluated resistance, capacitance and permittivity of devices.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.53-65
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• 1998

Planar lightwave circuits (PLCs) provide various important devices for optical wavelength division multiplexing (WDM) systems, subscriber networks and etc. This paper reviews the recent progress and future prospects of PLC technologies including arrayed-waveguide grating multiplexers, optical add/drop multiplexers, programmable dispersion equalizers and hybrid optoelectronics integration technologies.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.243-250
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• 1988

530A의 질화막과 23A의 엷은 산화막두께로 제작된 MNOS 소자의 기억트랩분포와 기억특성을 TSC방법과 C-V방법으로 조사하였다. 소자는 전기적으로 기억갱신이 가능하며 무전압유지가 반영구적임을 확인하였다. 기억트랩에 해당하는 TSC곡선을 분석하는데는 공간적, 에너지적인 트랩의 분포모형을 가정하고 best fitting법을 사용하였다. 그 결과 기억트랩은 질화막-산화막 계면에서 질화막안으로 10A 깊이로 분포되었으며 에너지준위는 질화막전도대 하단에서 2.35-2.38eV로 분포되어 있음을 밝혔다. 또한 방전기구는 산화막층을 통한 직접터널링과 열적여기를 함께 고려하여 설명할 수 있었다.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.428-430
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• 2000

In this paper, the Flexible information display was implemented using AC powder electroluminescent device. ZnS:Cu and $BaTiO_3$ was used as a phosphor and dielectric respectively. The preparation of phosphor and dielectric layer was performed with screen printing. The implemented system of the Flexible information display was divided as following; EL display, driving circuit, software for driving. The properties of fabricated devices was measured with EL spectrum and brightness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.178-182
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• 2007

Electroluminescent (EL) devices based on organic thin films are considered to be one of the next generation of flat-panel displays. In this paper, we have investigated electro-luminescent (EL) characteristics of organic EL device using $Alq_{3}$, PBD as emitting material. Current and luminance can be seen that express a similar relativity in voltage and could know that luminance is expressing current relativity.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.1011-1012
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• 2006

In this paper, implementation process of standard platform for T-DMB Receiver in low-cost and small-size are following: First, implement SoC for 32 bit RISC CPU and 16 bit DSP, Hardware H.264 CODEC, Post Processor or Video Display, Audio Processor, I/O Device. Second, implement Real Time OS for flexible application. Third, propose simple architecture for interface with peripheral devices using one-chip processor.