• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.531-535
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• 2007

To invest the luminescent characteristics of red light emitting OLED device, a dual dopant system was incorporated into the emitting layer. The multiple layer OLED device structure was $ITO(1500\;{\AA})/HIL(200\;{\AA})/a-NPD(600\;{\AA})/EML(300\;{\AA})/Alq_3(200\;{\AA})/LiF(7\;{\AA})/Al(1800\;{\AA})$. The concentrations of the rubrene dopant were tested at 0 vol.%, 3 vol.%, 6 vol.% and 9 vol.%. The maximum device efficiency and life time were obtained at the rubrene dopant concentration of 6 vol.%. Emission spectrum and color coordinate of devices showed no relationship with rubrene dopant concentration. Experiment results show that rubrene dopant absorbs energy from $Alq_3$ host and transfer it to RD1 dopant acting as an energy intermediate and influencing the device efficiency, finally the red light is emitted from the RD1 dopant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.565-570
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• 2015

The haptic actuator needs to downsize in the mobile devices continuatively. In this work, the hinge lever mechanism was used in order to prevent lowering the vibration performances of the downsized actuator. The vibration performances of actuator with and without hinge-lever mechanism were simulated by the finite element method analysis. It is concluded that the hinge-lever mechanism may be a proper measure to prevent lowering the vibration performances in the downsized piezoelectric actuator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1810-1817
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• 2015

The railway vehicle has an auxiliary power unit for supplying power to the associated electronic control devices and passenger service unit. Typically, input voltage from the catenary for rolling stock is highly fluctuating according to the substation capacity, vehicle propulsion and regeneration. Especially, the frost and freezing on contact wire in winter can cause a blackout inside vehicle, and also brings about electronic components damaging and the system down. To prevent this problem, a large filter and capacitor is used. But this is not a perfect solution, because it is increasing weight of the unit. In this paper, a new algorithm is proposed to suppress the disturbance without adding devices. Simulation and experimental results show that the proposed algorithm has performance to suppress the disturbance at the sudden input voltage variations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.103-104
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• 2007

Nanometer-scaled polymer beads, such as polystyrene beads, were used as nanometer fabrication materials due to their some advantages such as self-assembled monolayer, nanometer scaled size and excellent compatibility with silicon based devices. Thus, the investigation on these properties of polymer beads was required. It is difficult to control the array of polystyrene beads on silicon substrate. In this study, we investigated the condition of selective array of polystyrene beads on nanometer-scaled hydrophilic surface which was obtained by APS coating. A tilting method was used to array the polystyrene beads selectively on the substrate. The polystyrene beads could be arrayed selectively by this method. From these results, we verified that there are possibilities to fabricate unique tools for the nanometer-scaled electrical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.367-367
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• 2007

Polymer/nanoparticle hybrids have been increasingly studied because of their enhanced properties for organic light emitting devices (OLEDs). In this study, we made poly(p-phenylene vinylene) (PPV) nanohybrid films by incorporation of Ag and $SiO_2$ nanoparticles into the PPV. A possible interaction between nanoparticles was investigated and especially we focused whether there is a change in the interaction between $SiO_2$ or Ag nanoparticles and matrix or not. The current characteristics of PPV nanohybrid films were analyzed by I-V and EL measurements. The optical properties were also investigated by UV-Vis spectroscopy and photoluminescence measurements.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1504-1505
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• 2007

In this paper, fully embedded high Dk BTO MIM capacitors have been developed into a multi-layered organic package substrate for low cost RF SOP (System on Package) applications. These embedded MIM capacitors were designed and simulated by using CST 3D EM simulators for finding out optimal geometries and verifying their applicability. The embedded MIM capacitor with a size of $550\;{\times}\;550\;um^2$ has a capacitance of 5.3pF and quality factor of 43 at 1.5 GHz, respectively. The measured performance characteristics were well matched with 3D EM simulated ones. Equivalent circuit parameters of the embedded capacitors were extracted for making a design library.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1512-1513
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• 2007

In this paper the influence of CMOS- and TTL-technology on the breakdown and destruction effects by artificial electromagnetic waves is determined. Different electronic devices(3 CMOS & 5 TTL) were exposed to high amplitude electromagnetic waves. CMOS ICs were occurred only destruction below the max electric field and TTL ICs were occurred breakdown and destruction below the max electric field. The SEM analysis of the destruction devices showed onchipwire and bondwire destruction like melting due to thermal effect. The test results are applied to the data which understand electromagnetic wave effects of electronic equipments.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.262-263
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• 2007

In this paper, fully embedded and miniaturized diplexer has been designed, fabricated, and characterized for dual-band/mode CDMA handset applications. The size of the embedded diplexer is significantly reduced by embedding high Q circular spiral inductors and high DK MIM capacitors into low cost organic package substrate. The fabricated diplexer has insertion losses and isolations of -0.5 and -23dB at 824-894MHz and -0.7 and -22dB at 1850-1990MHz, respectively. Its size is 3.9mm$\times$3.9mm$\times$ 0.77mm (height). The fabricated diplexer is the smallest one which is fully embedded into low cost organic package substrate.