Journal of the Microelectronics and Packaging Society
/
v.21
no.4
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pp.77-82
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2014
Stretchable electrodes are focused due to many demands for soft electronics. One of the candidates, carbon black composites have advantages of low cost, easy processing and decreasing resistivity in a certain range during stretching. However, the electrical conductivity of carbon black composites is not enough for electronic devices. Graphene is 2-dimensional nanostructured carbon based material which shows good electrical properties and flexibility. They may help to improve electrical conductivity of the carbon black composites. In this study, graphene was added to a carbon black electrode to enhance electrical properties and investigated. Electrical resistivity of graphene added carbon electrode decreased comparing with that of carbon black electrode because graphene bridged non-contacting carbon black aggregates to strengthen the conductive network. Also graphene reduced an increase in the resistance of the carbon black electrode applied to strain because they connected gap of separated carbon black aggregates and aligned along the stretching direction at the same time. In conclusion, an addition of graphene to carbon black gives two benefits on the electrical properties of carbon black composite as a stretchable electrode.
In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.
Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.
Lee, Yongju;Kim, Hyunwoo;Kim, Huijeong;Huh, Taeyeong;Jung, Sanghyuk;Song, Yong Ho
Journal of the Institute of Electronics and Information Engineers
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v.50
no.3
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pp.78-87
/
2013
NAND flash memory has been widely used as a storage medium in mobile devices, PCs, and workstations due to its advantages such as low power consumption, high performance, and random accessability compared to a hard disk drive. However, NAND flash cannot support in-place update so that it is mandatory to erase the entire block before overwriting the corresponding page. In order to overcome this drawback, flash storages need a software support, named Flash Translation Layer. However, as the high performance mass NAND flash memory is getting widely used, the size of mapping tables is increasing more than the limited DRAM size. In this paper, we propose an adaptive mapping information caching algorithm based on page mapping to solve this DRAM space shortage problem. Our algorithm uses a mapping information caching scheme which minimize the flash memory access frequency based on the analysis of several workloads. The experimental results show that the proposed algorithm can increase the performance by up to 70% comparing with the previous mapping information caching algorithm.
Journal of the Institute of Electronics Engineers of Korea TC
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v.43
no.9
s.351
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pp.105-119
/
2006
The car navigation system to be accompanied to the car on-board equipment system or the development of mobile communication technique, the demand in information communication which connects an interior and the car outside is coming to be high, As applications, ETC/VISC/AHS classes get deceived supply are advanced. The research of DSRC radio systems actively, with medium of communication between the automobile and road, is advanced. DSRC radio systems are appropriate in massive data transfer, in the case which the traffic accident evasion is urgent, the notarization of the preferential control function which is necessary to a medium of communication, guarantee and security are suitable in the high-speed network. Accompanied to the cellular phone which is to be supplied recently suddenly, By complementing and coexisting each other, and it will be developed simultaneously. However, in a connection of this kind of communication system and high-speed DSRC radio system, Hand-over technique (network, radio transmission hand-over), there is a technical subject of the high-speed transmission techniques against the mobile devices and the realization is expected to be difficult in near, until 2010 year is becoming the plan of putting to practical use. Also as the next generation DSRC with 5.8GHz built-on board equipment and the road-side equipment are expected in near. In this paper DSRC systems which will be developed are discussed.
Transactions of the Korean Society of Mechanical Engineers B
/
v.35
no.2
/
pp.145-152
/
2011
The performance of flat-tube radiators with louvered fins was numerically investigated for different tube insertion lengths. The results of numerical analysis using CFX-11 were compared with experimental results. In this study, three types of flat-tube radiators with louvered fins were considered. An experiment was conducted to validate the numerical results. Flow rate ratio (FR) and Stotal were introduced to understand the uniformity of flow distribution easily. The results of numerical analysis revealed that the heat transfer rate and pressure drop increased as the mass flow rate increased. Further, the results showed that the heat transfer rate of sample 3 with h/D = 0.5 was higher than that of the other samples. The pressure drop increased as the insertion length toward the header part increased, and the pressure drop in the case of sample 3 appeared to be the highest. The factor Stotal showed that the uniformity of the flow distribution in the case of sample 1 with h/D = 0 was higher than that in the case of the other samples.
Kim Sung June;Jung Hum;Yu Young Suk;Yu Hyeong Gon;Cho Dong il;Lee Byeong Ho;Ku Yong Sook;Kim Eun Mi;Seo Jong Mo;Kim Hyo kyum;Kim Eui tae;Paik Seung June;Yoon Il Young
한국가시화정보학회:학술대회논문집
/
2002.04a
/
pp.51-78
/
2002
A number of research groups worldwide are studying electronic implants that can be mounted on retinal optic nerve/visual cortex to restore vision of patients suffering from retinal degeneration. The implants consist of a neural interface made of biocompatible materials, one or more integrated circuits for stimuli generation, a camera, an image processor, and a telemetric channel. The realization of these classes of neural prosthetic devices is largely due to the explosive development of micro- and nano-electronics technologies in the late $20^{th}$ century and biotechnologies more recently. Animal experiments showed promise and some human experiments are in progress to indicate that recognition of images can be obtained and improved over time. We, at NBS-ERC of SNU, have started our own retinal implant project in 2000. We have selected polyimide as the biomaterial for an epi-retinal stimulator. In-vitro and in-vivo biocompatibility studies have been performed on the electrode arrays. We have obtained good affinity to retinal pigment epithelial cells and no harmful effect. The implant also showed very good stability and safety in rabbit eye for 12 weeks. We have also demonstrated that through proper stimulation of inner retina, meaning vision can be obtained.
This dissertation proposes method for development technology of voice and SMS(Short Message Service) alarming system based on modbus protocol. The proposed technology is composed of the following 3 stages; hardware development based on microprocessor, development of input and output driver for modem, mp3 decoder, making modbus protocol stack. In the stage of hardware development based on microprocessor, we develop hardware which receives alarm from modbus master and transmit sms message, play mp3. In the stage of development of input / ouput device driver such as modem, mp3 decoder, we develop program which control each devices. In the stage of making modbus protocol stack, voice and sms alarm system is made for receiving alarm via modbus protocol. To evaluate performance of proposed technology, we issued alarm to voice and sms alarming system on purpose. As a result, response speed of detecting alarm was 10.7ms, communication distance was 1.2Km, operating temperature was from $-25^{\circ}C$ to $70^{\circ}C$, we confirmed supporting modbus protocol. And we verified that proposed voice and sms alarming system in the thesis has a performance to be used as an industrial building alarming system.
Kim, Myung-Chan;Heo, Cheol-Ho;Park, Jin-Hyo;Park, Seung-Jun;Han, Jeon-Geon
Proceedings of the Korean Vacuum Society Conference
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1999.07a
/
pp.122-122
/
1999
Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.
The Journal of Korean Institute of Electromagnetic Engineering and Science
/
v.24
no.2
/
pp.180-188
/
2013
A W-band waveguide noise measurement system for calibrating noise sources was implemented and its basic characteristics were discussed. The measurement system consists of a commercial noise figure analyzer, a full W-band frequency converter, and a local oscillator. To measure the noise temperature of a noise source, the Y-factor method is generally used. Since the Y-factor method is based on the assumption that the receiving system is linear, linearity is one of important performance parameters of the measurement system. In this paper, the linearities for mixer, intermediate frequency(IF), and RF parts were evaluated to be 0.24 dB, 0.05 dB, and 0.20 dB, respectively. The noise figure of the measurement system evaluated is 5 dB to 17 dB in W-band. The measurement system can be used to measure thermal noise characteristics of electronic and electrical devices, equipments, and systems as well as to calibrate noise sources.
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