• Nanomaterials
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• v.10 no.4
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• pp.764-767
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• 2020

Since the great success of graphene, atomically thin layered nanomaterials-called two-dimensional (2D) materials-have attracted tremendous attention due to their extraordinary physical properties. In particular, van der Waals heterostructured architectures based on a few 2D materials, named atomic scale Lego, have been proposed as unprecedented platforms for the implementation of versatile devices with a completely novel function or extremely high performance, shifting the research paradigm in materials science and engineering [1]. Thus, diverse 2D materials beyond existing bulk materials have been widely studied for promising electronic, optoelectronic, mechanical, and thermoelectric applications. In particular, this Special Issue includes the recent advances in unique preparation methods, such as exfoliation-based synthesis and the vacuum-based deposition of diverse 2D materials, as well as their device applications based on their interesting physical properties. This editorial consists of the following two sections: Preparation Methods of 2D Materials and Properties of 2D Materials.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.79-85
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• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.98-109
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• 2002

Bluetooth technology is a publicly available specification proposed for Radio Frequency (RF) communication for short-range :1nd point-to-multipoint voice and data transfer. It operates in the 2.4㎓ ISM(Industrial, Scientific and Medical) band and offers the potential for low-cost, broadband wireless access for various mobile and portable devices at range of about 10 meters. In this paper, we describe the structure and the test results of the bluetooth baseband module with direct memory access method we have developed. This module consists of three blocks; link controller, UART interface, and audio CODEC. This module has a bus interface for data communication between this module and main processor and a RF interface for the transmission of bit-stream between this module and RF module. The bus interface includes DMA interface. Compared with the link controller with FIFOs, The module with DMA has a wide difference in size of module and speed of data processing. The small size module supplies lorr cost and various applications. In addition, this supports a firmware upgrade capability through UART. An FPGA and an ASIC implementation of this module, designed as soft If, are tested for file and bit-stream transfers between PCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Progress in Medical Physics
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• v.14 no.3
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• pp.151-160
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• 2003

The application of more complex radiotherapy techniques using multileaf collimation (MLC), such as 3D conformal radiation therapy and intensity-modulated radiation therapy (IMRT), has increased the significance of verifying leaf position and motion. Due to thier reliability and empirical robustness, quality assurance (QA) of MLC. However easy use and the ability to provide digital data of electronic portal imaging devices (EPIDs) have attracted attention to portal films as an alternatives to films for routine qualify assurance, despite concerns about their clinical feasibility, efficacy, and the cost to benefit ratio. In this study, we developed method for daily QA of MLC using electronic portal images (EPIs). EPID availability for routine QA was verified by comparing of the portal films, which were simultaneously obtained when radiation was delivered and known prescription input to MLC controller. Specially designed two-test patterns of dynamic MLC were applied for image acquisition. Quantitative off-line analysis using an edge detection algorithm enhanced the verification procedure as well as on-line qualitative visual assessment. In conclusion, the availability of EPI was enough for daily QA of MLC leaf position with the accuracy of portal films.

• Korean Journal of Optics and Photonics
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• v.17 no.1
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• pp.94-98
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• 2006

An optical microphone based on a dual-core fiber collimator and a membrane type micromirror serving as an optical head and a reflective diaphragm respectively was implemented. The micromirror diaphragm is suspended by a thin silicon bar linked with a frame, thus it is subject to a displacement induced by acoustic waves. The optical head incorporating two collimators integrated in a single housing gives light to and receives it from the diaphragm, rendering the optical microphone structure simple and compact. This dual-core collimator having a slowing varying beam profile facilitates the initial alignment of the optical head with the diaphragm, especially the distance between them. For the assembled microphone, the static characteristics were investigated tofind the operation point defined as the optimum distance between the head and the diaphragm, and a frequency response with a variation of about $\pm$5 dB for the range of up to 3kHz was achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.742-750
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• 2018

In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.12
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• pp.907-914
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• 2018

Wireless charging has been actively researched and popularized owing to the potential convenience of being able to charge electronic devices without wires for users. However, the receiver on the wireless charging pad is not charged when the center of the receiver is misaligned; thus, the center of the receiver must be adjusted well. This misalignment may greatly reduce the convenience of wireless charging. To overcome this limitation of wireless charging, a coil is designed to improve the positional freedom of the receiver. The positional freedom of the Rx coil is improved when the outer diameter of Tx coil is larger than when Rx and Tx coils are almost the same size. When the Tx coil has a larger outer diameter than that of the Rx coil, the efficiency at the center is somewhat lowered, but the efficiency is improved compared to when the center is out of order. In this paper, a double coil structure having an outer and an inner coil is proposed. The double coil structure further improves the efficiency, compared with one coil with the same outer size. The simulation and measurement results demonstrated that the tendency was consistent, and it was verified that the degree of freedom of the Rx coil is improved by adding the inner coil, while the size of the outer coil was the same. The measurement shows that the transmission efficiency of the conventional Tx coil is 37 %, the larger outer diameter coil is 45 %, and double coil is 47 % when the distance of the Tx/Rx coil is 3 mm, the misalignment is 15 mm and current flowing in the Rx coil is 1 A at an operating frequency of 105 to 210 kHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.10
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• pp.930-936
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• 2014

Smart Multiple-Tap to be introduced in this paper, is an electronic device that controls the Multibple-Tap through the Smartphone. It runs on network and has an inbuilt Zigbee communication module. Thus, users can control home devices from remote through home server. Mentioned home server is operated as a gateway and is connected with smart devices on the Internet. To sum up, Users using this Smart Multiple-Tap can check the state information of the multi-tap ON/OFF and can control immediately by smartphone. also, Smart Multiple-Tap perfectly shut down the standby power. when users turn off each of the Smart Multiple-Tap's circle, It drives automatically lowest electricity-consuming mode and shut down the standby power by its own built-in SSR module. therefore, it will bring the energy saving effect on environment using Smart Multiple-Tap.