• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.398-405
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• 2002

The degradation characteristics of MgO additive for the ZnO ceramic devices fabricated by the standard ceramic techniques are investigated in this study. These devices were made from basic Matsuoka's composition. Especially, MgO was added to analyze the degradation characteristics and devices were sintered in air at $1200^{\circ}C$. The conditions of DC degradation test were $115\pm2^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed, respectively. The elemental analysis in the microstructures was performed by EDS, E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand the relationship between $R_G$ and $R_B$ with the electric stress at the equivalent circuit.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.67-75
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• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.366-369
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• 2001

In this study, the matrix Organic Electroluminescence (OEL) device, that was consisted of R,G,B pixels. We fabricated OEL devices by side by side methode and, used organic material Alq3 as green, DCM as red and Butyl PBD as blue ETL. We investigated the characteristic of brightness and current density for matrix OEL device. As the results, each color devices has minimum about 100 cd/㎡ brightness and maximum luminescence was 2500cd/㎡ in green OEL device

• Transactions of the Society of Information Storage Systems
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• v.11 no.2
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• pp.26-30
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• 2015

Recently, military vehicles are driven with a lot of electronic devices such as radar, antenna, and information storage devices. However, the military vehicles can be exposed to impact easily. Therefore, they have to be designed robustly in order to ensure the stability of the vehicle and the electronic devices. To achieve that, the dynamic behaviors of the military vehicle should be exactly identified. Therefore, in this research, dynamic behaviors of the vehicles were identified by carrying out road tests and we constructed finite element model to analyze the dynamic characteristics of the vehicle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.584-592
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• 2003

6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.41-45
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology and successive in-situ photocathode vacuum device fabrication carried out in a process chamber. Performance testing of the device was followed. Light emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of the applied anode voltages. The results showed that this approach could produce a more easily directed and controlled stream of light. These features make these devices suitable for a variety of planar lighting applications.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).