• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.248-249
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• 2008

ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.77-78
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• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• 전자공학회논문지 IE
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• v.46 no.3
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• pp.12-18
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• 2009

In this paper, we developed white balance correction processor for Full Color LED Display System which could be display uniformity color and soft light by adjusting brightness of red, green, blue pixel, individually. This processor correct brightness by calculating operating current of each pixel(red, green, blue LED) on the basis of characteristic curve of LED device when we named "a" as a specific characteristic value, "b" as a brightness correction value according to using time, "X" as a operating current value, and "Y" as brightness value. As the results, we solved the reduction problem of brightness for long used LED devices, according to increase entire mean of brightness value by adjusting "b" value from the brightness characteristic function.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.2
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• pp.223-228
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• 2016

People try to maintain optimal sleep activity to a changing attitude 20-30 times while sleeping 7-8 hours a day. In order to provide optimal sleep, we need to develop sensing device for apply effective various sleep data acquired through display device that can provide program and information which process and analyze information printed out from sensor and sensing system. In this paper, we analyze sleep pattern to detect the toss and turn while a person's sleeping and we develop a wellness pillow that can be active on sleep health management based on the analyzed data for sleep patterns.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.5
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• pp.499-504
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• 2016

The Service had a purpose to be heard through the Smart Phone APP and Smart TV Broadcasting Contents to Foreigner's Language in The Asia Culture Center. This Paper explained how to realize foreigner with Beacon's Signal and IoT gateway provided the voice service with selected his language using AllJoyn Protocol Interface function. IoT Service Platform received the Registration of foreigner's identifier, there sent messages to all devices, which were all IoT gateways, IoT gateway could connect to foreigner's Smart Phone App and heard the Broadcasting contents. If a foreigner went out of Beacon's management distance, the voice App service were released.