• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• Journal of Broadcast Engineering
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• v.23 no.4
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• pp.549-558
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• 2018

We designed and implemented streaming server based on MEPG DASH, which is able to provide high quality video with low-latency live streaming service like 360 VR video on the existing cable network via low-spec media service devices such as IPTV and OTT(Over the Top) SettopBox. We also designed and applied management process which is cable of supporting services by cashing streaming video file(MPD, Segment Files) to reduce the server response delay time. Further more, we confimred that it is also able to provide high quality of tiled video streaming with over 50,000kbps bitrate and 8K@60P through the experiment.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.6
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• pp.2648-2668
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• 2016

Modern mobile devices are equipped with various accelerated processing units to handle computationally intensive applications; therefore, Open Computing Language (OpenCL) has been proposed to fully take advantage of the computational power in heterogeneous systems. This article introduces a parallel software decoder of Low Density Parity Check (LDPC) codes on an embedded heterogeneous platform using an OpenCL framework. The LDPC code is one of the most popular and strongest error correcting codes for mobile communication systems. Each step of LDPC decoding has different parallelization characteristics. In the proposed LDPC decoder, steps suitable for task-level parallelization are executed on the multi-core central processing unit (CPU), and steps suitable for data-level parallelization are processed by the graphics processing unit (GPU). To improve the performance of OpenCL kernels for LDPC decoding operations, explicit thread scheduling, vectorization, and effective data transfer techniques are applied. The proposed LDPC decoder achieves high performance and high power efficiency by using heterogeneous multi-core processors on a unified computing framework.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.1
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• pp.73-80
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• 2015

The valve device is installed in hazardous areas, such as a chemical plant explosion has been sealed with fire protection device to prevent the risk of explosion. In this paper, due to the explosion-proof devices using external power the device can not be used in infrared sensors and Zigbee sensor valve device by measuring the open degree of valve opening and closing of the danger zone to check whether. Valve opening and closing operation log screen time, we propose a low-power operation monitoring system administrators to manage and control the plant. Develop power control relay board apply an improved algorithm to apply the asynchronous LPL power management. The plant monitoring system and explosion-proof valve opening and closing the valve system with the intelligent device designed and implemented and tested it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.100-104
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• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.34-35
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• 2009

We have studied the electrical and optical of organic light-emitting diodes depending on hole size of crucible boat using BCP materials. The thickness of TPD, $Alq_3$ and BCP was manufactured 40 nm, 60 nm and 5 nm under a base pressure of $5\times10^{-6}$ Torr using at thermal evaporation, respectively. In order to investigate the optimal surface roughness of BCP, the BCP was thermally evaporated to be 0.8 nun, 1.0 mm, 1.2 mm and 1.5 mm as a hole size of crucible boat, respectively. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when hole size of crucible boat using BCP is 1.2 mm. Also, compared to the ones from the devices having the hole size of crucible boat is 1.0 mm and 1.5mm layer, the external quantum efficiency were improved by 2.5 and 2.4 times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.387-387
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• 2009

In the study the volume resistivity Characteristics of epoxy resin using nanocomposites, nano-comosites are made from insulating material epoxy resin using for power transformer equipment and molding several devices as changing amount of addition of diameter 12 [nm] $SiO_2$, we measured volume resistivity of nano-composites by High Resistance Meter(4329A). As the result of measurement, we have seen the epoxy resin using 1.6 [wt%] nanocomposites was the highest measured at the volume resistivity, and using 0.4 [wt%] nanocomposites was highest stabilized than others according to variable temperature properties.