• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.12
• /
• pp.1009-1014
• /
• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.40 no.3
• /
• pp.215-224
• /
• 2003

This paper presents an electronic ballast using a novel complex modulation method for the metal halide lamp. The proposed modulation method, which has a modulating signal of swept complex frequency, can eliminate the acoustic resonance more effectively than the conventional modulation method, which has a modulating signal of constant frequency. For the purpose of future application specific integrated circuits (ASIC). the controller of the proposed ballast has been designed only with erasable programmable logic devices (EPLDs), but without a microprocessor. In this paper, detailed proposed modulation schemes are described and experimental results on the proto type 150W metal halide lamp ballast with the proposed modulation method ate discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.158-158
• /
• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.33-33
• /
• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.130-130
• /
• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• 제어로봇시스템학회:학술대회논문집
• /
• 2003.10a
• /
• pp.2147-2150
• /
• 2003

Recently, many technologies of the P.L.C (Power Line Carrier) are introduced for an efficient communication. P.L.C communication sends information in the carrier signals by conduction over the power wire. An arc detector is proposed in this paper for the effective transmission. The Power Line Carrier has an advantage in low cost because it uses existent power line. It can be easily applied anywhere that a power line socket is available. But the P.L.C. is very noisy, because many electronic devices in generate electronic noise in modulated signals. This problem should be considered carefully in the design of the arc detector system using P.L.C in railway. The proposed system can be applied for monitoring the arc detector system and the arc locator system in railway. Hence the system will be able to exchange the arc information to be T.C.M.S. (Train Control Management System), bogies and even between a station and trains in railway and use to suspicion fire in train.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.1
• /
• pp.79-84
• /
• 2020

Wireless power transfer is more convenient than wired power transfer, but has a shorter transfer distance and lower efficiency. In addition, it is difficult to charge multiple devices simultaneously. In this paper, we propose a method of magnetic beam forming by using multiple transmitters in order to increase transfer distance and improve efficiency of wireless power transfer. To do this, the relationship between the transmitter coil current and magnetic field at the center of receiver coil is modelled, and calculate the optimal transmitter coil current using the characteristics of the pseudoinverse. Finally, the validity of the proposed method is verified by simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.1
• /
• pp.92-97
• /
• 2009

Low power consumption is crucial for medical implantable devices. A low-power 4th-order band-pass Gm-C filter with distributed gain stage for the sensing stage of the implantable cardiac pacemaker is proposed. For the implementation of large-time constants, a floating-gate operational transconductance amplifier with current division is employed. Experimental results for the filter have shown a SFDR of 50 dB. The power consumption is below $1.8{\mu}W$, the power supply is 1.5 V, and the core area is $2.4\;mm{\times}1.3\;mm$. The filter was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.6
• /
• pp.351-354
• /
• 2016

The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of $2.68{\times}10^{-4}{\Omega}{\cdot}cm$, high hall mobility of $46.89cm^2/V.s$, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.1
• /
• pp.78-82
• /
• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.