• Korean Journal of Materials Research
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• v.24 no.11
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• pp.573-577
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• 2014

The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.6
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• pp.50-63
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• 2000

In this paper, a new EMG pattern classification method based on soft computing techniques is proposed to help the disabled and the elderly handle rehabilitation robotic arm systems. First, it is shown that EMG is more useful than existing input devices such as voice, a laser pointer and a keypad in view of naturality, extensibility, and applicability. Then, a new procedure is proposed to select the minimal feature set. As methods of classifying the pre-defined motions, a fuzzy pattern classification and fuzzy min-max neural networks (FMMNN) are designed using the selected features. As results, the motions are recognized with success rates of 83 percent and 90 Percent using fuzzy pattern classification and FMMNN, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.456-456
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• 2008

In the past few years, the deposition and characterization of cadmium sulfide semiconducting thin films has received a considerable amount of interest due to their potential application in the area of electronic and opto-electronic devices fabrications. Polycrystalline CdS thin films posses good optical transmittance, wide band-gap and electrical properties makes it as one of the ideal material for their application to solar cell fabrication. Cadmium sulfate thin films were deposited by the chemical bath deposition method using tartaric acid and triethanolamine as a complexing agent. Deposition parameters such as pH, temperature, deposition time and concentration of the reactant species were optimized so as to obtain reflecting, good adherent uniform thin films on the glass substrate. Reaction mechanism of the thin film formation is also reported. The crystallographic structure and the crystallite size were studied by the X-ray diffraction pattern. The optical band-gap of deposited film is identified by measuring the transmittance in the visible region. Temperature dependence of resistivity confirmed the semiconducting behavior of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size 50 nm.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.43-55
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• 2003

As the development of If industries and their electronic device manufacturing technology have been accelerated recently, the request for electronic devices with small size, light weight, and high performance has been inducing that electronic package and substrate (PCB) companies have to develop substrates with low cost, high dense I/O, excellent thermal properties and electrical properties. Therefore, world-wide chip makers have been setting their own severe reliability standards and requiring their suppliers to keep specification and to develop green, high frequency and high-performing substrates. Because properties of substrates are dependent mainly on their constituent materials, the application of them showing superior properties is expected to satisfy the customer's requirement. Therefore, substrate companies should ensure the superiority of materials and assure their competitive capability of substrates by analyzing the latest trends of technology and properties of the materials.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Journal of Biomedical Engineering Research
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• v.30 no.6
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• pp.503-509
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• 2009

The development of technology has led to ubiquitous health care service, which enables many patients to receive medical services anytime and anywhere. For the ubiquitous health care environment, real-time measurement of biomedical signals is very important, and the medical instruments must be small and portable or wearable. So, such devices have been developed to measure biomedical signals. In this study, we develop the biomedical monitoring device which is sensing the PPG signal, one of the useful signal in the field of ubiquitous healthcare. We design a watch-like biomedical signal monitoring system without a finger probe to prevent the user's inconvenience. This system obtains the PPG from the radial artery using a sensor in the wrist band. But, new device developed in this paper is easy to get the motion artifacts. So, we proposed new algorithm removing the motion artifacts from the PPG signal. The method detects motion artifacts by changing the degree of brightness of the light source. If the brightness of the light source is reduced, the PPG pulses will disappear. When the PPG pulses have disappeared completely, the remaining signal is not the signal that results from the changing blood flow. We believe that this signal is the motion artifact and call it the noise reference signal. The motion artifacts are removed by subtracting the noise reference signal from the input signal. We apply this algorithm to the system, so we can stabilize the biomedical monitoring system we designed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.34-39
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• 2006

This study provides the electrical model of combustible catalytic gas sensor. Physical characteristics such as thermal behavior, resistance change were included in this model. The finite element method analysis for sensor device structure showed that the thermal behavior of sensor is expressed in a simple electrical equivalent circuit that consists of a resistor, a capacitor and a current source. This thermal equivalent circuit interfaces with real electrical circuit using two parts. One is 'power to heat' converter. The other is temperature dependent variable resistor. These parts realized with the analog behavior devices of the SPICE library. The gas response tendency was represented from the mass transferring limitation theory and the combustion theory. In this model, Gas concentration that is expressed in voltage at the model, is converted to heat and is flowed to the thermal equivalent circuit. This model is tested in several circuit simulations. The resistance change of device, the delay time due to thermal capacity, the gas responses output voltage that are calculated from SPICE simulations correspond well to real results from measuring in electrical circuits. Also good simulation result can be produced in the more complicated circuit that includes amplifier, bios circiut, buffer part.