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http://dx.doi.org/10.3740/MRSK.2014.24.11.573

Fabrication and Characterization of Hydrogen Getter Based on Palladium Oxide Doped Nanoporous SiO2/Si Substrate  

Eom, Nu Si A (Department of Fusion Chemical Engineering, Hanyang University)
Lim, Hyo Ryoung (Department of Fusion Chemical Engineering, Hanyang University)
Choi, Yo-Min (Department of Fusion Chemical Engineering, Hanyang University)
Jeong, Young-Hun (Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering & Technology)
Cho, Jeong-Ho (Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering & Technology)
Choa, Yong-Ho (Department of Fusion Chemical Engineering, Hanyang University)
Publication Information
Korean Journal of Materials Research / v.24, no.11, 2014 , pp. 573-577 More about this Journal
Abstract
The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.
Keywords
gas getter; hydrogen adsorption; solution process; nanoporous $SiO_2/Si$ substrate;
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Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 C. Boffito, B. Ferrario, P. della Porta, and L. Rosai., J. Vac. Sci. Technol., 18(3), 1117 (1981).   DOI
2 Brochure SAES Getters: Customized Solutions for Device Miniaturization, (2007).
3 G. Deng, X. Zhao, S. Wang, X. Liu, Z. Li and L. Jiang, J. hydrogen energy 38, 13050 (2013).   DOI   ScienceOn
4 S. Avdiaj, B. Setina-Batic, J. Setina and B. Erjavec, Materials and technology 45(1), 33 (2011).
5 P. Chiggiato, P. Costa Pinto., Thin Solid Films 515, 382 (2006).   DOI   ScienceOn
6 J. -S. Park, C. -Y. Suh and W. -B. Kim, Kor. J. Mater. Res., 15(12), 802 (2005).   DOI
7 H. Y. Choi, M. S. Kim, G. S. Kim, M. Y. Cho, S. M. Jeon, K. G. Yim, D. -Y. Lee, J. S. Kim, J. S. Kim and J.-Y. Leem, J. Korrean Inst. Surf. Eng., 43(3), 121 (2010).   DOI   ScienceOn
8 K. Luongo, A. Sine and S. Bhansali, Sens. Actuators, B, 111-112, 125 (2005).   DOI   ScienceOn
9 H. M. Smith, J. R. Schicker, Patent, US5888925 A (1999).
10 W. -C. Li and T. J. Balk, Materials 2, 2496 (2009).   DOI
11 V. A. Karagounis, C. C. Liu, M. R. Neuman, L. T. Romankiw, P. A. Leary and J. J. Cuomo, IEEE Trans. Biomed. Eng., 33, 113 (1986).
12 J. Zhao, W. Wang, Yi. Liu, J. Ma, X. Li, Y. Du and Geyu Lu, Sens. Actuators, B 160, 604 (2011).   DOI   ScienceOn
13 Y. T. Lee, Y. J. Kim, J. M. Lee, J. H. Joe and W. Y. Lee, J. Korean Inst. Met. Mater., 48(4), 347 (2010).   DOI   ScienceOn
14 Q. Liu, K. Gath, J. Bauer, R. Schaak and J. Lunsford, Catal. Lett., 132, 342 (2009).   DOI
15 J. Exley, Part I: Characterization of Supported Palladium, Hydrogen Sorption, 19 1 4-5 (2008) from http://www.micromeritics.com
16 S. Imai, M. Takahashi, K. Matsuba, Asuha, Y. Ishikawa and H. Kobayashi, Acta Phys. Slovaca, 55(3), 305 (2005).