• Title/Summary/Keyword: Electronic devices

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A Next Generation Electronic Bulletin Board Supporting N-Screen for a College Information System (대학정보시스템을 위한 N-Screen 지원 차세대 전자게시판)

  • Park, Jae Heung;Seo, Yeong Geon
    • KIPS Transactions on Software and Data Engineering
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    • v.1 no.3
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    • pp.169-176
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    • 2012
  • The information delivery and transmission media(DID or PID) market is making remarkable growth as the high-speed networks are spreading and LCD/LED TVs are more and more popularized, and display devices are increasingly large and high-definition. In addition, the popularization of smart devices and the expansion of the information delivery and transmission media market make a demand for N-Screen in content service. Colleges and universities have installed and operated various types of DID to promote their schools and departments and deliver information about them, still remaining in the level of media content implementation. So, we implement and evaluate a next-generation electronic bulletin board for each department that allows for interactive N-Screen communication based on the integration of smart phone and internet. This board enhanced efficiency as supporting N-Screen, inserting and deleting the contents at real time and offering bidirectional communication.

Bit-Rate Analysis of Various Symmetric ESQWs SEED under Optimized Input Power (최적 입사 광 전력 하에서의 대칭 ESQWs SEED의 비트 전송률 특성 분석)

  • Lim, Youn-Sup;Choi, Young-Wan
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.7
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    • pp.66-79
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    • 1999
  • We investigate the effects of high input power on the performance of optical bistable symmetric self-electooptic effect devices (S-SEEDs) using extremely shallow quantum wells (ESQWs). In this study, we consider the four ESQWs SEEDs; anti-reflection (AR)-coated ESQWs S-SEED, back-to-back AR coated ESQWs S-SEED, asymmetric F뮤교-Perot (AFP) ESQWs S-SEED, and back-to-back AFP-ESQWs S-SEED. As the input power increases, device performances such as on/off contrast ratio, on/off reflectivity difference are seriously degraded because of ohmic heating and exciton saturation. On the other hand, switching speed of the device increases up to certain value and then begins to decrease. With reasonable optimization of the input power for the best switching speed operation of the devices in a cascading optical interconnection system, we simulate and analyze the system bit-rate of the various ESQWs S-SEEDs, for a mesa of $5{\times}5{\mu}m^2$ size, changing the namber of quantum wells for the external bias of 0 V and -5V.

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Implementation of Medical Diagnostic Information System and Conformance Test of Medical Image in Mobile Environment (모바일 환경에서 의료 진단 정보 시스템의 구현 및 의료 영상의 적합성 평가)

  • Cho, Chung-Ho;Kim, Gwang-Hyun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.6
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    • pp.713-720
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    • 2015
  • As the hand-held mobile devices are widely used, they are recently coming into convergence with medical diagnostic systems. Furthermore, the wireless mobile Internet and the various kinds of communication devices are rapidly coming into wide use converging with medical technology. The mobile communication environments can make people get more health care services beyond space and time. In this paper, we implement and evaluate the mobile client and the medical diagnostic information server for transmitting, searching and updating the medical diagnostic information. The DICOM CT image and the compressed JPEG 2000 CT image are statistically evaluated by t-test performance whether those images are clinically appropriate. In the case of the DICOM CT image, we realize that the average value is relatively more appropriate to the clinical diagnosis than the JPEG 2000 CT image.

Implementation of Access Control System Based on CAN Communication (CAN통신 기반 출입 통제 시스템 구현)

  • Song, Jongkwan;Park, Jang-Sik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.6
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    • pp.951-956
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    • 2011
  • CAN communication developed for communication between electric control devices in vehicle, was recently applied to automatic breaking devices, and can also be applied to field bus for production automation. Recently, field bus is introduced in engine control etc., for large ship. In this paper, cabin access control system is implemented, based on CAN communication. The cabin access control system based on CAN communication consists of access control server, embedded system based on ARM9, and micro-controller built-in CAN controller. The access control server can be able to manage overall access control system by accessing with manager. And embedded system adopted ARM9 processor transmits access information of RFID reader controller connected with CAN networks to server, also performs access control. The embedded system carry CAN frames to server, so it is used as gateway.

3D Printing Design for Minimizing Flection Phenomenon (3D 프린팅 휘어짐 현상 최소화를 위한 설계)

  • Choi, Seong-Ook;Hwang, Suk-Seung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.12
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    • pp.1415-1420
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    • 2014
  • 3D printer is based on an additive manufacturing technology, which helps in creating the three-dimensional object using a 3D drawing. It is used in various fields, because it prints out a variety of three-dimensional products in a short period of time. In this paper, we consider a technique using the FDM(Fused Deposition Modeling) method by dissolving the ABS(Acrylonitrile Butadiene Styrene) resin among a diversity of printing technique and materials. This kind of the 3D printer prints out a product in high temperature and cools down it. In this process, a flection phenomenon is occurred according to the size of the printing product and the surrounding environment. Conventional methods for mitigating this phenomenon maintain the temperature at the optimum level, but they require using additional devices. In order to minimize the flection phenomenon in 3D printing products without additional devices, in this paper, we propose a noble technique, which creates holes on suitable positions when they are designed by 3D drawing tools. Also, we suggest mathematical model for the proposed method, and measure and analyse a printing output using a proposed technique.

A Implementation of Smart Band and Data Monitoring System available of Measuring Skin Moisture and UV based on ICT (ICT기반의 피부 수분 및 자외선 측정이 가능한 스마트 밴드 및 데이터 모니터링 시스템 구현)

  • Jung, Se-Hoon;Sim, Chun-Bo;You, Kang-Soo;So, Won-Ho
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.4
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    • pp.715-724
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    • 2017
  • Today all kinds of smart devices are being developed with various researches on wearable devices that support smart computing on the human body. Skin diseases continue to rise including freckles, pimples, atopy, and scalp trouble due to the environmental and genetic factors, and people pay bigger medical bills to treat their skin diseases. There is thus a need to develop a smart-phone or table-based smart healthcare imaging system of high portability and diagnostic accuracy capable of analyzing and managing various skin problems related to skin care. This study proposed an integrated system combining the Smart Mi Band, a wearable device using moisture and UV sensors based on IoT, on the hardware part with the sensor information monitoring software.

A study of the synthesis and the properties on microwave dielectric material of $BaO-Sm_2O_3-TiO_2$ system ($BaO-Sm_2O3-TiO_2$계 마이크로파 유전체의 합성 및 그 특성에 관한 연구)

  • 이용석;김준수;이병하
    • Electrical & Electronic Materials
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    • v.10 no.3
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    • pp.274-283
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    • 1997
  • These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........

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Analysis of An Anomalous Hump Phenomenon in Low-temperature Poly-Si Thin Film Transistors (저온 다결정 실리콘 박막 트랜지스터의 비정상적인 Hump 현상 분석)

  • Kim, Yu-Mi;Jeong, Kwang-Seok;Yun, Ho-Jin;Yang, Seung-Dong;Lee, Sang-Youl;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.900-904
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    • 2011
  • In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

Adsorption of residual gases on carbon nanotubes and their field emission properties

  • Lee, Han-Sung;Jang, Eun-Soo;Goak, Jeung-Choon;Kim, Jin-Hee;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.51-51
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    • 2008
  • Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

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Reduction of Barrier Height between Ni-silicide and p+ source/drain for High Performance PMOSFET (고성능 PMOSFET을 위한 Ni-silicide와 p+ source/drain 사이의 barrier height 감소)

  • Kong, Sun-Kyu;Zhang, Ying-Ying;Park, Kee-Young;Li, Shi-Guang;Zhong, Zhun;Jung, Soon-Yen;Yim, Kyoung-Yean;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.157-157
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    • 2008
  • As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

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