• 제목/요약/키워드: Electronic device

검색결과 4,544건 처리시간 0.032초

Luminance Characteristics of a Novel Red-Light-Emitting Device Based on Znq2 and Dye

  • Cho, min-Jeong;Park, Wan-Ji;Lee, Jeong-Gu;Lim, In-Su;Lim, Kee-Joe;Kim, Hyun-Hoo
    • Transactions on Electrical and Electronic Materials
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    • 제3권2호
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    • pp.16-19
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    • 2002
  • In this study, a novel red emitting organic electroluminescent (EL) device was fabricated with the bis(8-oxyquinolino)zinc II (Znq2) doped dye as an emitting layer. The Znq2 was synthesized successfully from zinc chloride (ZnC1$_2$) as an initial material. Then, we fabricated the red organic EL device with a dye (DCJTB) doped and inserted Znq2 between emission layer and cathode for increasing EL efficiency. The hole transporting layer is a N,N'-diphenyl-N,N'-bis-(3-methylphenyl)-1,1'-diphenyl-4,4-diamine (TPD), and the host material of emission layer is Znq2. And the electrical and luminance characteristics of the device were measured. We found that the EL device with Znq2 inserting layer results in the increasing luminance efficiency.

상부 발광 유기 발광 소자에서 두께와 시야각에 따른 마이크로 캐비티 특성 (Thickness and Angle Dependent Microcavity Properties in Top-Emission Organic Light-Emitting Diodes)

  • 이원재
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.32-35
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    • 2011
  • Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

LB박막의 전자이동 특성에 관한 연구 (A Study on the Electronic Properties of LB Thin Films)

  • 송진원;최영일;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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    • pp.101-104
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    • 2002
  • Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

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Smart Device의 MAC Address를 이용한 건물 출입통제 시스템 (Building Access Control System Using MAC Address of Smart Device)

  • 정용진;이종성;오창헌
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2014년도 춘계학술대회
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    • pp.873-875
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    • 2014
  • 본 논문에서는 스마트 디바이스의 MAC address를 이용한 bluetooth 기반의 건물 출입통제 시스템을 제안한다. 제안하는 출입통제 시스템은 서버에 등록된 MAC address와 출입자의 스마트 디바이스 MAC address를 비교하여 일치 여부에 따라 출입통제가 이루어진다. 실험 결과, 스마트 디바이스와 bluetooth 모듈의 bluetooth 페어링만으로 출입문의 통제가 가능하기 때문에 별도의 출입 도구가 필요하지 않고, 출입 승인을 위한 행동이 생략됨에 따라 기존 출입통제 시스템에 비해 출입 승인절차가 간소화되어 편의성을 향상시킬 수 있다.

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비접촉식 5지문 획득 장비 개발 (Development of touchless fingerprint acquisition device for 5 fingerprint)

  • 노동현;최경택;최희승;김재희
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.961-962
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    • 2008
  • This paper proposes a touchless fingerprint acquisition device for five fingerprints. In conventional devices, they are focused for taking 1 touchless fingerprint image. But this device is taking 5 fingerprint image at a time. Also, it considers problems for focus and rolling in touchless fingerprint recognition for using camera. They affects fingerprint recognition, so this research is performed to measure and analyze these problems.

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분리형 히트파이프를 이용한 전자장비내 발열체의 온도제어에 관한 연구 (The Study of Using Separate Heatpipes for Thermal Control in Electronic Equipments)

  • 배석태
    • Journal of Advanced Marine Engineering and Technology
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    • 제27권2호
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    • pp.305-311
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    • 2003
  • This Paper Presents an information about the heat transfer characteristics of a separate type thermosyphon in electronic equipments. The heat removal problem of electronic equipments is regarded as an important factor and a separate type heatpipes can be utilized as a cooling device of electronic equipments (such as CPU of a Personal computer or notebook). In this study. heat source ($50\times50\times2 mm $aluminum Pseudo CPU) was used for the experiment. The device can transfer heat from the evaporator to the condenser through natural circulation (without any external driving forces) and the results indicate that the device is capable of dissipating over 60W of thermal energy and keeping the heating plate surface temperature under $50^{\circ}C$.

새로운 구조의 고속-고내압 SOI Smart Power 소자 설계에 관한 연구 (A Study on the Design of the New Structural SOI Smart Power Device with High Switching Speed and Voltage Characteristics)

  • 원명규;구용서;안철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.239-242
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    • 1999
  • In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8${\mu}{\textrm}{m}$ design rule, the high voltage bipolar with 40V breakdown voltage for analog signal processing, the high speed bipolar with cut-off frequency over 20㎓ and LDD NMOS for high density were proposed and simulated on a single chip by the simulator DIOS and DESSIS. And we extracted the process/device parameters of the simulated devices.

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P-Emitter의 길이, 구조가 Asymmetric SiC MOSFET 소자 성능에 미치는 영향 (Effect of P-Emitter Length and Structure on Asymmetric SiC MOSFET Performance)

  • 김동현;구상모
    • 한국전기전자재료학회논문지
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    • 제33권2호
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    • pp.83-87
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    • 2020
  • In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.

입자 조사에 의한 PT형 전력 다이오드의 스위칭 특성 향상 (Switching Characteristics Enhancement of PT type Power Diodes by means of Particle Irradiation)

  • 김병길;최성환;이종헌;배영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.16-17
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    • 2005
  • Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.

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설압력 측정품구에 관한 연구 (A STUDY OF ELECTRONIC DEVICE FOR THE MEASURING THE TONGUE PRESSURE)

  • 이호용;김기환;정경훈
    • 대한치과의사협회지
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    • 제15권12호
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    • pp.1027-1030
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    • 1977
  • It has been widely believed that the exact measurement of the forces exerted on teeth and its structures by the lingual and perioral musculatures such as lip, cheek and tongue is important and significant in dentistry. Such measuring, moreover, is highly emphasized the importance of the fact that it can be of much help to study the physiological function displayed in the oral cavity. Recognizing the importance of measuring the pressures, the author has devised an electronic device consisting of pressure transducers utilizing reistance-strnain gauges. This electronic strain gauge was very easy to manipulate and its scale error was extremely minimized, unaffected by mouth temperature, mosture and external forces Author was able to read its results with attached meter without using calibration chart. Futhermore, the sensitivity of this electronic device was extremely high, Thus it facilitated to measure a force from 0 to 230 grams.

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