• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.1
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• pp.59-64
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• 2016

This paper aims at the prototype-making of the intelligent switchgear with arc fault diagnosis function required to prevent the electrical fire. The main control unit of the intelligent switchgear consists of a single-phase power management device and a arc fault diagnosis device. The prototype of the single-phase power management device and the prototype of the arc fault diagnosis device in this paper. In the device, the cooperation function with the arc fault diagnosis device is developed to transmit the cause of the electrical fire to the remote server system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.228-239
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• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.9
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• pp.75-79
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• 2011

The MOV(Metal Oxide Varistor), a voltage limiting element, has been installed in the SPD(Surge Protective Device) or inside the internal circuit of an electronic appliance for protection of the electric power system and electronic device against electrical surge. Such an MOV is exposed, however, to the risk of the thermal runaway resulting from excessive voltage and deterioration. In this paper, a reciprocal action has been tested and analyzed using a phosphorus bronze switching module and the low-temperature solder. And a short current break characteristic test linked with the circuit breaker has been performed to limit the inrush current when the MOV breaks down. It has been proven that the phosphorus bronze switching module installed inside the internal circuit can improve the safety of the power line system and the electronic device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.8
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• pp.3090-3102
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• 2015

The accuracy of an augmented reality (AR) application is highly dependent on the resolution of the object's image and the device's computational processing capability. Naturally, a mobile smart device equipped with a high-resolution camera becomes the best platform for portable AR services. AR applications require significant energy consumption and very fast response time, which are big burdens to the smart device. However, there are very few ways to overcome these burdens. Computation offloading via mobile cloud computing has the potential to provide energy savings and enhance the performance of applications executed on smart devices. Therefore, in this paper, adaptive mobile computation offloading of mobile AR applications is considered in order to determine optimal offloading points that satisfy the required quality of experience (QoE) while consuming minimum energy of the smart device. AR feature extraction based on SURF algorithm is partitioned into sub-stages in order to determine the optimal AR cloud computational offloading point based on conditions of the smart device, wireless and wired networks, and AR service cloud servers. Tradeoffs in energy savings and processing time are explored also taking network congestion and server load conditions into account.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.6
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• pp.857-864
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• 2018

This paper describes about the circuit design and test of the electronic Arm Fire Device. Electronic arm fire device consists of igniter, circuit and housing case and it operates without the actuator such as torque motor or solenoid. A high-voltage DC-DC converter was used to generate the voltage for initiating the LEEFI(Low Energy Exploding Foil Initiator). The MEMS switch was used to detect the acceleration that occurs when missile is launched, and the circuit was designed considering the size, performance, and specification of the electronic devices. The performance test was conducted to verify the designed circuit and we confirmed that it operates well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.792-796
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• 2014

In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.73-76
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• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current. then manufacture a device under the accumulation condition that the state surface pressure is 15[mN/m]. In processing of a device manufacture. We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au, the number of accumulated layers are 31,35, and 41. I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.55-61
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• 2011

In this paper, the outage probability of device-to-device (D2D) uplink communication underlaying cellular networks is analyzed over Rayleigh fading. We assume that a D2D pair and M cellular user equipments share the same frequency resources. To prevent any harmful interference from a D2D transmitter to the BS, the maximum transmit power of the D2D transmitter is strictly limited. Under these assumptions, the outage probability is represented as a function of the interference-to-signal ratio from M cellular user equipments to a D2D receiver and the number of cellular user equipments, M. In addition, the interference-to-signal ratio is represented as a function of distances among D2D equipments, cellular user equipments and the BS. Simulation results validate these analytical results.