• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.875-880
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• 2008

In this paper, we deal with the TLP evaluation results for GGNMOS in ESD protection device of conventional CMOS process. An evaluation parameter for GGNMOS is that repeatability evaluation for reference device($W/L=50\;{\mu}m1.0\;{\mu}m$) and following factors for design as gate width, number of finger, present or not for N+ gurad -ring, space of N-field region to contact and present or not for NLDD layer. The result of repeatability was showed uniformity of lower than 1 %. The result for design factor evaluation was ; 1) gate width leading to increase It2, 2) An increase o( finger number was raised current capability(It2), and 3) present of N+ gurad-ring was more effective than not them for current sink. Finally we suggest the optimized design conditions for GGNMOS in evaluated factor as ESD protection device of conventional CMOS process.

• 전기학회논문지
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• 제65권4호
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• pp.673-677
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• 2016

In this study, In order to measure foot pressure, it makes analyzing device using multi-pressure sensor. This device was limited frequency band to 5Hz by using low-pass filter and MCU was detected signal every milliseconds. After wearing the device, the result was confirmed by blue-tooth to measure wirelessly. Also, we propose an algorithm to obtain the walking pattern using a time table in each of the detected peak from the pressure sensor. Using the algorithm, right walking pattern and abnormal pattern was detected. The results can be reflected more individual walking patterns than when using a conventional methods and also, developed device was no restriction on the human activity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.500-510
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• 2013

In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.471-477
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• 2007

SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.61-64
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• 2001

This study relates to a method for manufacturing a solid electrolytic capacitor using a functional polymer composition. The method comprises immersing the rolled aluminum electrolytic capacitor device in polyaniline solution with high electric conductivity to impregnate the device with polyaniline, drying the impregnated device in a drying oven which is maintained at constant temperature to fully remove the solvent, inserting the dried device to a capacitor aluminum can and then sealing with epoxy resin, to manufacture a solid electrolytic capacitor using a conducting polymer. As such, the impregnation can be performed well at not only normal temperature and pressure, but also high temperature and reduced pressure. The solid electrolytic capacitor has the advantages of high capacity, low impedance and low ESR, and also, low manufacturing cost, simple processes and high reliability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.210-215
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• 1994

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.264-266
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• 2005

Manufacture of OLED device used thermal evaporation method. However thermal evaporation method has many defect as thermal damage of substrate, difficult of dopant rate control and low utilization of organic materials. so we suggest PLD(Pulsed Laser Deposition) method that solution of these problems. PLD method has many advantage as without thermal damage, easy indicate of deposition rate per one pulse and good utilization of organic materials. In this paper we apply the PLD method for manufacture of device so we present high efficiency device manufacture using PLD method that has good deposition uniformity, surface rough and deposition rate.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.536-540
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• 2004

A novel nematic liquid crystal (LC) cell with splay structure exhibiting wide viewing angle, fast response time and high transmittance at the same time has been developed. With rubbed homeotropic alignment in parallel directions, the device shows bend alignment in the absence of vertical electric field. However, with applied high voltage in a pulse form, the LC shows a optically compensated splay (OCS) orientation such that the mid-director is parallel to a substrate and at both surfaces the LCs are aligned vertically in parallel direction. In the device, the birefringence of the cell becomes tunable with applying voltage, i.e., the amount of light passed through the cell can be controlled by controlling the orientation of the LC. Since the OCS cell has a self-compensation structure such that the LC has a mirror symmetry along the mid-director, the device shows a wide viewing angle with only a single domain and a fast response time.