• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.428-432
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• 2014

The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.779-782
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• 1998

Electroluminescence is occurred by electric filed located in the phosphor. Until now most of EL researched have been studied the characteristics of devices that drive over 400Hz and commercialized, but in Problems of life time, natural aging increased with behavior of high frequency in the phosphor. In this paper, we investigated the luminescence characteristics were driven by low frequency($0{\sim}100Hz$). Moreover, we Presented the improvement way in the method device production and drive power as measurement at commercial frequency(60Hz).

• Progress in Superconductivity
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• v.1 no.2
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• pp.115-119
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• 2000

We designed and constructed a non-destructive evaluation system using an HTS DC SQUID electronic gradiometer. Our DC SQUID electronic gradiometer is composed of two DC SQUID magnetometers. The system included a non-magnetic stainless steel cryostat and a set of coaxial exciting coils, which were used to induce an eddy current in the test piece. We also have calculated the eddy current density produced by an exciting coil in any direction of the testing object. We could compute the eddy current density distribution in 3D. The SQUIDs were computer controlled and the output data from the electronic gradiometer was obtained by using a Labview software.

• Proceedings of the KIEE Conference
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• 1997.07b
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• pp.593-596
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• 1997

The main purpose of this paper is to develop sensing device of joint angle using loss of opfical fiber. The source of light to optical fiber is infrared rays diode, and receiver is a photo transistor. The bent angle of optical fiber is measured with rotary encoder, and The change of voltage due to the loss of light is measured with micro computer PIC16C74. The sensing device may be used to Functional Electrical stimulation(FES) System for Rehabilitation patient.

• Journal of Magnetics
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• v.8 no.1
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• pp.50-59
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• 2003

Spatial light modulators (SLMs) are centrally important devices in volumetric recording, data Processing, Pattern recognition and other optical systems. Various types of reusable SLMs with two-dimensional pixel arrays have been intensively developed. Of these, magneto-optic spatial light modulators (MOSLMs) have advantages of high switching speed, robustness, nonvolatility, and radioactive resistance. In this article, we review recent development work on MOSLMs, mainly in relation to our own studies.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.20-23
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• 2012

In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.

• International Journal of Advanced Culture Technology
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• v.10 no.4
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• pp.547-554
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• 2022

Due to the expansion of non-face-to-face services, the demand for user identification for mobile devices is increasing. Recently, mobile resident registration cards, mobile driver's licenses, etc. are installed in mobile phones and used for user identification and authentication services. In order to identify a user online, unique identification information of the online user is required. In particular, in order to provide information only to online users, it is necessary to accurately deliver information to a mobile device owned by the user. To make this service possible, it was realized with the advent of mobile electronic notice service. However, the identification of online service users and information on mobile devices owned or subscribed by the relevant users require safe management as personal information, and it is also necessary to increase the convenience of online service users. In this paper, we propose an operating standard for providing a mobile electronic notice service that sends electronic notice using a mobile device owned by the user. The mobile electronic notice service is a service that provides notices expressed in electronic information to the recipient's cell phone, mobile app, e-mail, etc. Therefore, as the use of mobile electronic notification service increases and the provision and use of connecting information to identify users increases, it is necessary to expand the mobile electronic notification service while safely protecting users' personal information.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.