• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Composites Research
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• v.30 no.5
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• pp.288-296
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• 2017

The focus of this study is to experimentally investigate the heat dissipation characteristics of poly (methyl methacrylate) (PMMA) composite films with phase change materials (PCM) to resolve heat build-up problems encountered in various electronic devices. In this study, two different types of phase change materials were used to fabricate the composite films by compression molding method and PCM paste sealing method then compared. It was observed in this study that the heat dissipation capability of PCM/PMMA composite films was remarkably enhanced by applying graphite sheet or graphene film into the composite due to their high thermal conductivity. These PCM/ PMMA composite films were attached on the hot spot inside smart phone and tested its surface temperature change according to time. The heat dissipation capability of PCM/PMMA composite film incorporated smart phone was increased 154% and hybrid PCM/PMMA composite film incorporated smart phone was increased 286% over the reference, respectively.

• Journal of the Korea Institute of Building Construction
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• v.19 no.6
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• pp.477-484
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• 2019

The purpose of this study is to present basic data for developing concrete with EMP shielding as the structure materials when constructing an EMP shielded building structure. In order to use metal-based recycled aggregates with excellent conductivity and easy procurement for EMP shielding concrete, an evaluation of the stability evaluation and EMP shielding performance was performed. Through the stability evaluation, it was found that the coarse aggregate stability criterion was satisfied, but the oxidized slag did not satisfy the fine aggregate stability criterion, the oxidized slag is not satisfied. In addition, as a result of fresh concrete, the workability is increased and the air volume is decreased. The compressive strength is increased due to the high density and coarse granularity of the recycled aggregates, which increased the cement paste and adhesion, thereby increasing the compressive strength. The results of an EMP shielding test show that aggregates with high shielding performance are electronic arc furnace(EAF) Oxidizing Slag and Cooper Slag. The shielding performance is expected to increase if the average particle size of aggregate is small or uniformly distributed.

• Applied Chemistry for Engineering
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• v.5 no.5
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• pp.764-771
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• 1994

Electrochemical synthesis of conductive polypyrrole films was carried out in nucleophilic solvent containing p-toluenesulfonic acid or bezensulfonic acid as supporting electrolyte and dopant. Also characteristics of degradation and improvement of mechanical properties were studied. The conductivity, tensile strength and elongation of the films obtained in dimethyformamide/p-toluenesulfonic acid had the highest value of 10-40S/cm, $25N/mm^2$ and 10%, respectively. The optimum condition of electrochemical synthesis was $2mA/cm^2$ for constant current method and 0.9V for constant potential method containing 0.5M pyrrole and 0.5M p-TSA. The obtained films showed good stability in air and electrode characteristics of secondary battery by reversibility in doping and undoping. The degradation process was 1st order reaction at various temeprature. The activation energy and rate constant of degradation reaction were $1.01JK^{-1}mol^{-1}$ and $3.1{\times}10^{-7}min^{-1}$ respectively at $25^{\circ}C$. For the improvement of mechanical properties, composition of polypyrrole films with various host polymer were investigated and increase of tensile strength and elongation was confirmed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.534-540
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• 2013

Interest of the hand effect on the electromagnetic wave are internationally increasing with the increase of the use of the mobile phone. IEC TC106(International Electrotechnical Commission, Technical Committee 106) promotes international research exchange program in order to reflect the effect of human hands in the standard assessment method of human exposure dosimetry by the electromagnetic wave of mobile phones. Since current commercialized hand phantom is manufactured by taking into account the average size of westerners and provides only one grip posture, it imposes many restrictions on the accurate SAR measurement. Therefore, the development of proper hand phantom accounting for domestic situation and various grip posture capability is essential in order to analyze the accurate effect of human hand on the exposure estimation. In this paper, a jelly hand phantom suitable for Korean was manufactured with various grip posture capability at 835 MHz and 1,800 MHz bands. Although the tolerances of permittivity and conductivity of the manufactured hand phantom are with ${\pm}10%$ each, it was much less than CTIA(Cellular Telecommunication Industry Association) tolerance of ${\pm}20%$ at both bands. Its 3D CAD(3 Dimensional Computer Aided Design) file which was developed can be utilized for the simulation of human hand effect on SAR measurement of mobile phones. The findings in this study can be utilized for the analysis of human hand effect on SAR measurement of a mobile phone.

• Textile Coloration and Finishing
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• v.28 no.1
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• pp.48-56
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• 2016

Improvement of heat sink technology related to the continuous implementation performance and extension of device-life in circumstance of easy heating and more compact space has been becoming more important issue as multi-functional integration and miniaturization trend of electronic gadgets and products has been generalized. In this study, it purposed to minimize of decline of the heat diffusivity by gluing polymer through compounding of inorganic particles which have thermal conductive properties. We used NH-9300 as base resin and used inorganic fillers such as silicon carbide(SiC), aluminum nitride(AlN), and boron nitride(BN) to improve heat diffusivity. After making film which was made from 100 part of acrylic resin mixed hardener(1.0 part more or less) with inorganic particles. The film was matured at $80^{\circ}C$ for 24h. Diffusivity were tested according to sorts of particles and density of particles as well as size and structure of particle to improve the effect of heat sink in view of morphology assessing diffusivity by LFA(Netzsch/LFA 447 Nano Flash) and adhesion strength by UTM(Universal Testing Machine). The correlation between diffusivity of pure inorganic particles and composite as well as the relation between density and morphology of inorganic particles has been studied. The study related morphology showed that globular type had superior diffusivity at low density of 25% but on the contarary globular type was inferior to non-globular type at high density of 80%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.7
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• pp.17-25
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• 2017

To resolve the problem of the temperature rise in LED or OLED lighting, until now a thick metal film has been used as a heat-sink. Conventionally, this thick metal film is made by the electroplating method and used as the heat-dissipating plate of the electronic devices. However, nowadays there is increasing need for a Cu metal film with a thickness of several hundred micrometers that can be formed by the dry deposition method. In this work, we designed and fabricated a Cu film deposition system where the heating element is separated from the ceramic crucible, which makes ultra-rapid deposition possible by preventing heat loss. In addition, the resulting induction heating also contributes to the high deposition rate. By tuning the various parameters, we obtained a $100-{\mu}m$ thick Cu film whose heat conductivity is high and whose thickness uniformity is better than 2%, while the deposition rate is as high as $1000{\AA}/s$.

• Journal of Advanced Navigation Technology
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• v.6 no.3
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• pp.195-202
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• 2002

Recently, as the range of mobile communication services is extended, the interference between adjacent base-stations is increased. Nowdays, one of the important factors causing interference is IMD (Inter-Modulation Distortion) problems. Not only active IMD but also passive IMD effects must be considered to design a CDMA system. In this study, we design and implement 7/16" DIN connectors which have a various intensity of surface illumination, thickness and quality of plating material to analyze the effects of PIMD. And propose the methods for improving the PIMD characteristics: First, it is more profitable to use the metal which has good intensity of surface illumination where most of all electric currents passes through it. Secondly, we should plate metals more than $5{\mu}m$ for RF energy enough to propagate in a medium. Thirdly, it is necessary to select a metal having high conductivity and specific heat to protect the aging phenomenon of plate material. And it is required to develop a new plating material to replace the current materials, such as the alloy of three components for cost reduction. We have to know that the plate which has intensity of surface illumination 6 S and the thickness of plating material $5{\mu}m$ satisfy the domestic PIMD specification (KTF) -150 dBc, regardless of the plate material in case of 7/16" DIN connector.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.77-82
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• 2000

A surface of polytetrafluoroethylene(PTFE) was modified with changing ion doses by 1 keV $Ar^+$ ion irradiation and Cu films having thickness $5000\;{\AA}$ were deposited on the modified PTFE. The SEM study showed that the surface texture of modified PTFE was in the form of cones whose height increased depending on ion doses. Through XPS spectra, it was found that the intensity of F ls peaks decreased with ion doses by preferential sputtering of F atoms and the C-C and / or C-F chains were formed by the crosslinking in the newly unstable chains. Cu films were deposited uniformly along the filaments formed on the modified PTFE. In x-ray diffraction (XRD) spectra of deposited Cu films on modified PTFE, a preferred orientation along (111) and (200) planes was found and the peak intensity of (111) plane increased as surface roughness of modified PTFE increased. The resistivity of Cu films was changed from $2.7{\mu}{\Omega}cm$ of unmodified PTFE to $4.3{\mu}{\Omega}cm$ of modified PTFE at ion dose of $1{\times}10^{16}/\textrm{cm}^2$ and the abrupt increase of resistivity in the modified PTFE at ion dose of $1{\times}10^{17}/\textrm{cm}^2$ was due to being cut off the film which resulted from the increased surface roughness.