• 제목/요약/키워드: Electronic and thermal properties

검색결과 1,077건 처리시간 0.037초

PCB 구조와 via hole 구성에 따른 LED 패키지의 열적 광학적 특성 분석 (The Analysis of Thermal & Optical Properties in LED Package by the PCB structure and via hole formation)

  • 이세일;이승민;양종경;박형준;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.297-298
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    • 2009
  • 대부분의 반도체 소자의 고장 원인은 85%정도가 열로 인한 것이며, 고출력 LED는 인가된 에너지의 20%정도의 광으로 출력되며 나머지 80%가 열로 전환된다. 본 논문에서는 PMS-50과 KEITHLEY 2430을 이용하여 PCB 구조와 Via hole 구성에 따른 LED 패키지의 열적 광학적 특성을 분석하였다. 0.6mm의 Via hole을 가진 FR4 PCB의 열특성이 가장 우수하였으며, Via hole 0.6mm FR4 PCB의 경우 McPCB에 상응하는 광출력 특성을 보였다.

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변위전류법에 의한 지질단분자막의 전기특성에 관한 연구 (A study on the electrical properties of lipid monolayers by displacement current method)

  • 이경섭;권영수
    • E2M - 전기 전자와 첨단 소재
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    • 제9권5호
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    • pp.450-454
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    • 1996
  • Maxwell-Displacement-Current(MDC) measuring technique has been applied to the study of monolayers of Dilauroylphosphatidylcholine (L-.alpha.-DLPC) and Dimyristoylphosphatidylcholine (L-.alpha.-DMPC). The displacement current was generated from monolayers on a water surface by monolayer compression. Displacement current was generated when the area per molecule was about 250.angs.$^{2}$, 280.angs.$^{2}$. Displacement current was generated in the gas state, gas/liquid state, and liquid state in the course of monolayer compression. The orientational change of molecules in monolayers was discussed on the basis of the MDCs obtained. Finally, we measured differential thermal analysis of sample.

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열분해법 의한 초전도선재 합성 (Fabrication of High Tc Superconductor Using Thermal pyrolysis Method)

  • 이상헌;최용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1337-1338
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    • 2006
  • BiSrCaCuO was prepared by the thermal pyrolysis method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $90^{\circ}C$ and calcination at $840^{\circ}C-920^{\circ}C$ for 4h, the high Tc phase was cleary observed. In this paper, the establishment of fabrication condition and additive effects of second elements were examined so as to improve the related properties to the practical use of BiSrCaCuO superconductor, and we reported the production of the BiSrCaCuO high Tc superconductor by the pyrolysis method.

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Fabrication Methods of Porous Ceramics and Their Applications in Advanced Engineering - Large Flat Precision Plate for Flat Display Industries

  • Matsumaru, Koji;Ishizaki, Kozo
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.3.1-3.1
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    • 2009
  • Normal sintering process of producing porous ceramics is not to sinter perfectly, i.e., stop sintering in middle-process. Our porous ceramic materials are a product of complete sintering. For example if one want to make a porous carborundum, raw carborundum powder is sintered at either lower temperatures than normal sintering temperature or shorter sintering periods than normal sintering time to obtain incompletely sintered materials, i.e., porous carborundum. This implies normally sintered porous ceramic materials can mot be used in high vacuum conditions due to dust coming out from uncompleted sintering. We could produce completely sintered porous ceramic materials. For example, we can produce porous carborundum material by using carborundum particles bonded by glassy material. The properties of this material are similar to carborundum. We could make quasi-zero thermal expansion porous material by using carborundum and particles of negative thermal expansion materials bonded by the glassy material. We apply to sinter them also by microwave to sinter quickly. We also use HIP process to introduce closed pores. We could sinter them in large size to produce $2.5m{\times}2.5m$ ceramic plate to use as a precision plate for flat display industries. This flat ceramic plate is the world largest artificial ceramic plate. Precision plates are basic importance to any advanced electronic industries. The produced precision plate has lower density, lower thermal expansivity, higher or similar damping properties added extra properties such as vacuum vise, air sliding capacity. These plates are highly recommended to use in flat display industries. We could produce also cylindrical porous ceramics materials, which can applied to precision roller for polymer film precision motion for also electronic industries.

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플라스틱 핵 솔더볼의 열응력 해석에 관한 연구 (A Study on Thermal Stress Analysis of Plastic-Core Solder Balls)

  • 김환동;윤도영
    • 한국공작기계학회논문집
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    • 제16권6호
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    • pp.159-162
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    • 2007
  • Recently, Pb-free solder ball technology, which is getting more significant in miniaturization of electronic equipment, and resolution of recent environmental problems, is necessary to be developed. A plastic-core solder ball is much promising in those considerations. Plastic-core solder balls have the tendency to replace the usual metal-core solder ball from low material cost and superior mechanical properties. The thermal effects, however, are important in manufacturing process, such as deposing micro-sized metal thin film on the spherical polymer surface. Furthermore plastic-core solder balls are easy to be broken due to CTE and elastic coefficient of material property from heat transfer. We propose technical computational investigations for the manufacturing design and the reliability of plastic-core solder ball from thermal stress analysis.

스퍼터링법으로 제조된 TaN 박막의 열처리 온도에 따른 전기적 물성에 관한 연구 (Electrical characteristic of RF sputtered TaN thin films with annealing temperature)

  • 김인성;송재성;김도한;조영란;허정섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.1014-1017
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    • 2001
  • In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

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유한요소해석을 이용한 방열용 Al-AlN 복합재의 제2상 분율에 따른 열-기계적 특성예측 (Predicting Thermo-mechanical Characteristics from the 2nd Phase Fraction of Al-AlN Composites for LED Heat Sinks with FEM)

  • 윤주일
    • 한국기계가공학회지
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    • 제17권5호
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    • pp.137-142
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    • 2018
  • With the development of the electronic-materials industry, multi-functional metal-composite materials with high thermal conductivity and low thermal expansion must be developed for high reliability and high life expectancy. This paper is a preliminary study on the manufacturing technology of gas reaction control composite material, focusing on the prediction of the equivalent thermal properties of Al-AlN composite materials. Numerical equivalent property values are obtained by using finite element analysis and compared with theoretical formulas. Al-AlN composite materials should become the optimal composite material when the proportion of the reinforcing phase is less than 0.5.

습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구 (Characterizations of Thermal Compound Using CuO Particles Grown by Wet Oxidation Method)

  • 이동우;엄창현;주제욱
    • 한국재료학회지
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    • 제27권4호
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    • pp.221-228
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    • 2017
  • Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu ($0.1{\mu}m$ and $7{\mu}m$) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at $75^{\circ}C$. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from $0.1{\mu}m$ Cu particles increased by 192.5 % and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

Synthesis and electroluminescent properties of highly twisted anthracene derivatives

  • Park, Sung-Jin;Park, Jong-Won;Jung, Sung-Ouk;Kim, Yun-Hi;Kwon, Soon-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.533-536
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    • 2008
  • The anthracene derivatives were synthesized by Suzuki coupling reaction. The thermal, optical and electronic properties of MNAn and BIPAn were investigated by thermogravimetric analysis (TGA), differential scanning calorimetry(DSC), UV-vis absorption, photoluminescen ce spectroscopies, and cyclic voltammetry. The materials exhibit high thermal stability and high per formance in EL devices.

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Low-Temperature Operating $SnO_2$ Nanowire $NO_2$ Sensor

  • Jung, Tae-Hwan;Kwon, Soon-Il;Kim, Yeon-Woo;Park, Jae-Hwan;Lim, Dong-Gun
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.485-486
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    • 2008
  • The network structure of $SnO_2$ nanowires was fabricated on the electrodes by a simple thermal evaporation process from Sn metal powders and oxygen gas. The diameter of the nanowires was $20\;{\sim}\;60\;nm$ depending on the processing conditions. The operating temperature of the sensor could be decreased down below $50^{\circ}C$ by controlling the properties of the nanowires and the structures of the electrodes. The sensitivities were $10\;{\sim}\;15$ when the $NO_2$ concentrations were $10\;{\sim}\;50\;ppm$ at the operating temperature of $50^{\circ}C$.

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