• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• 센서학회지
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• 제8권2호
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• pp.202-209
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• 1999

본 연구에서는 기존의 열산화막과 거의 버금가는 전기적 및 화학적인 성질을 가진다고 알려져 있는 다공질 실리콘 산화막을 이용하여 마이크로스트립 전송선을 제작하였다. 실리콘 기판의 결정상태를 유지하면서 표면적과 화학적 활성이 큰 다공질 실리콘층(porous silicon layer)을 형성한 다음, 이를 열산화 하여 수 십 ${\mu}m$ 두께의 산화막을 실리콘 기판 상에 제조하였다. 수십 ${\mu}m$ 이상의 양질의 산화막을 얻기 위한 다공질 실리콘의 산화시에 스트레스에 의한 웨이퍼의 휘어짐을 방지하기 위하여 다단계의 열산화 공정을 수행하였다. 제조된 실리콘 산화막 상에 마이크로스트립 전송선을 제작하고 그 마이크로웨이브 특성을 측정하여 MMIC 기판으로서의 응용 가능성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 대한전자공학회논문지SD
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• 제39권11호
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• pp.7-13
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• 2002

적외선 열 영상 system에서 가장 핵심이 되는 BSCT 320X240 IRFPA를 구현하였다. 검출기 module은 두 개의 부분, 즉 적외선 감지 pixel의 array와 감지된 신호를 읽어내는 ROIC로 구성된다. 50-${\mu}m$의 pitch와 95-%의 fill-factor를 만족하도록, laser scriber공정과 10-${\mu}m$ 크기의 ball을 갖는 micro bump공정을 적용하였다. ROIC는 선택된 신호를 읽어서 순차적으로 출력하게 설계되었으며, 단일 transistor amplifier, HPF, tunable LPF 그리고 clamp circuit를 삽입하여 SNR이 개선되도록 설계하였다. Detector와 ROIC의 결합으로 제작된 hybrid chip은 좀더 안정한 동작을 하도록 TEC가 내장된 ceramic package에 탑재하였다. 제작된 IRFPA sample은 원하는 특성을 만족하였으며, 특히 fill-factor, 탐지도, 반응도면에서 설계의 목표에 잘 근사함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.204-209
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• 2017

Thermal and structural stability in the glass transition region of chalcogenide glasses has been investigated in terms of thermodynamics for application to various optoelectronic devices. In this study, the compositions of $Ge_xSb_{20}Se_{80-x}$ (x = 10, 15, 20, 25, and 30) were selected to investigate the glass stability according to germanium ratios. The chalcogenide bulks were fabricated by using a traditional melt-quenching method. Thin films were deposited by a thermal evaporation system, maintaining the deposition ratio of $3{\sim}5{\AA}$ in order to have uniformity. The thermal and structural properties were measured by a differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The DSC analysis provided thermal parameters and theoretical glass region stabilities. The XRD analysis supported the theoretical stabilities because of where the crystallization peak data occurred.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.628-628
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• 2013

Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.318-324
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• 2017

Powder compaction technology is widely used to prepare thermal battery components. This method, however, is limited by the size, thickness, and geometry of the battery components. This limitation leads to excessive cell capacity, overweight, and higher cost of the pellets, which decreases the specific capacities and delays the activation time of thermal batteries. $FeS_2$ thin-film cathodes were fabricated by tape-casting technology and analyzed by SEM and EDS in this paper. The residual organic binder of the $FeS_2$ thin-film cathodes decreased with the temperature of the heat treatment, which improved the specific capacity because of the lower resistance. Specific capacities of the $FeS_2$ thin-film cathodes decreased because of the higher residual binder and the restrictive reaction of active materials with molten salts as the thickness increased. $FeS_2$ thin-film cathodes showed much higher specific capacity (1,212.2 As/g) than pellet cathodes (860.7 As/g) at the optimal heat-treatment temperature ($230^{\circ}C$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.215-216
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• 2007

Semiconducting layers are thin rubber film between electrical cable wire and insulating polymer layers having a volume resistivity of ${\sim}10^2{\Omega}cm$. A new semiconducting material was suggested in this study based on the carbon nanotube(CNT)-reinforced polymer nanocomposites. CNT-reinforced polymer nanocomposites were prepared by solution mixing with various polymer type and dual filler system. The mechanical, thermal and electrical properties were investigated as a function of polymer type and dual filler system based on CNT and carbon black. The volume resistivity of composites was strongly related with the crystallinity of polymer matrix. With decreased crystallinity, the volume resistivity decreased linearly until a critical point, and it remained constant with further decreasing the crystallinity. Dual filler system also affected the volume resistivity. The CNT-reinforced nanocomposite showed the lowest volume resistivity. When a small amount of carbon black(CB) was replaced the CNT, the crystallinity increased considerably leading to a higher volume resistivity.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.210-217
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• 2009

Insulated methods of compact bus duct has been applied a way of coating Epoxy powder. The problem which is caused by degradation during operation is very important in severe environment. Therefore, this study compared and verified many kind of properties ; electrical breakdown by thermal and water aging, v-t characteristic, arc discharge, mechanical properties, bending test and cross cut. Sample D was stable before the $T_g$ to be about $7{\sim}10 %$ decrease in the breakdown test according to temperature change. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical and mechanical characteristic, both sample D and A have excellent capacity.