• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.10-15
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• 2023

The carbonaceous materials have attracted much attention for utilization of anode materials for lithium-ion batteries. Among them, hollow carbon spheres have great advantages (high specific capacity and good rate capability) to replace currently used graphite anode materials, due to their unique features such as high surface areas, high electrical conductivities, and outstanding chemical and thermal stability. Herein, we have synthesized various sizes of hollow carbon spheres by a facile hardtemplate method and investigated the anode properties for lithium-ion batteries. The obtained hollow carbon spheres have uniform diameters of 350 ~ 600 nm by varying the template condition, and they do not have any cracks after the optimization of the process. Increasing the diameter of hollow carbon spheres decreases their specific capacities, since the larger hollow carbon spheres have more useless spaces inside that could have a disadvantage for lithium storage. The hollow carbon spheres have outstanding rate and cyclic performance, which is originated from the high surface area and high electrical properties of the hollow carbon spheres. Therefore, hollow carbon spheres with smaller diameters are expected to have higher specific capacities, and the noble channel structures through various doping approaches can give the great possibility of high lithium storage properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 대한기계학회논문집B
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• 제41권4호
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• pp.285-291
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• 2017

본 연구에서는 무인 항공 장비에 장착되는 전자 장비에 상변화 물질을 적용한 방열 설계를 수치적으로 진행하였다. 상변화 물질에 대한 열특성 실험을 통해 용융점($T_m$), 용융시 온도 증분(${\Delta}T_m$) 및 체적 팽창을 확인하였으며, 이를 통해 해석 모델 검증을 진행하였다. 용융시 용융점에서 발생하는 온도 정체 현상을 모사하기 위해 등가 비열법으로 계산한 열 물성치를 상변화 물질의 해석 모델 물성치로 입력하였으며, 실험 결과와의 비교를 통해 해석 모델의 신뢰성을 검증하였다. 검증된 해석 모델을 통해 핀과 함께 상변화 물질이 충진된 장비 하우징의 방열 성능을 향상시키고, 이를 통해 장비의 열적 안정성을 확보하였다. 현재 상변화 물질이 충진된 하우징의 방열 성능 극대화를 위해 핀 최적 설계에 대한 추가적인 연구가 진행 중에 있다.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.137-141
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• 2015

The purpose of this study is examining thermal dissipation materials for the lighting and radiate efficiency improvement of 8W LED and confirming the properness of the thermal dissipation materials for LED heat sink. Solid Works flow simulation on 8W class COB was done based on the material characteristics of thermal conductive polymer materials. According to the result of simulation, Al had better thermal dissipation performance than PET. Highest temperature was $7.6^{\circ}C$ higher while lowest temperature was $7.8^{\circ}C$ lower. The test on the heat sinks made by the materials, highest temperature was $4.1^{\circ}C$ higher and lowest temperature was $3.9^{\circ}C$ lower. It is possible to confirm that Al heat sink has better thermal dissipation efficiency because it has better dispersion of heat generated at junction temperature and less heat cohesion. The weight of PET heat sink was reduced than Al heat sink by 46.9% by the density difference between Al and PET. In conclusion, thermal dissipation performance of thermal conductive polymer is lower than Al material however, it is possible to lighting heat sink because thermal conductive polymer has better formability, has lower specific weight and enables various design options.

• 한국분말재료학회지
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• 제30권2호
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• pp.123-129
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• 2023

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.1-5
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• 2015

In high temperature aircraft electronics, aluminium based brazing filler is the prime choice today. Aluminium and its alloys have compatible properties like weight minimization, thermal conductivity, heat dissipation, high temperature precipitation hardening etc. suitable for the aerospace industry. However, the selection of brazing filler for high temperature electronics requires high temperature joint strength properties which is crucial for the aerospace. Thus the selection of proper brazing alloy material, the composition and brazing method play an important role in deciding the final reliability of aircraft electronic components. The composition of these aluminium alloys dependent on the addition of the various elements in the aluminium matrix. The complex shapes of aluminium structures like enclosures, heat dissipaters, chassis for electronic circuitry, in avionics are designed from numerous individual components and joined thereafter. In various aircraft applications, the poor strength caused by the casting and shrinkage defects is undesirable. In this report the effect of various additional elements on Al based alloys and brazing fillers have been discussed.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권2호
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• pp.51-54
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• 2004

In this paper, the thermal and mechanical properties of elastic epoxy for the application of high voltage products were investigated. Glass transition temperature (Tg) of elastic epoxies cannot be found from room temperature to 20$0^{\circ}C$ by DSC (Differential Scanning Calorimetry). Weight reduction occurred at 285$^{\circ}C$ and 451$^{\circ}C$ according to a thermogravimeter. The first temperature was affected by addictives and the second by epoxies characteristic. Maximum tensile strain showed 28.3kgf/$\textrm{cm}^2$/$\textrm{cm}^2$ at 20% of mechanical stress in addictives 35 (phr). The SEM (Scanning electron microscope) micrograph of the fracture surface observed void and tearing of elastic epoxy at addictives 35 (phr). On the other side, the SEM micrograph of the rigid epoxy showed a broken trace.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.352-356
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• 2007

The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

• Journal of Information Display
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• 제10권3호
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.