• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.103-118
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• 2022

With the recent increase in demand for electronic devices, multi-layer ceramic capacitors (MLCCs) have become the most important core component. In particular, the next-generation MLCC with extremely high reliability is required for the 4^th industrial revolution and electric vehicle applications. Therefore, it is necessary to develop dielectric ceramic materials with high dielectric properties and reliability. During the decades, electrical properties of BaTiO₃ based dielectric ceramics, which have been widely used in MLCC industrial field, have been improved by microstructure and defect chemistry control. However, electrical properties of BaTiO₃ have reached their limits, and new types of dielectric materials have been widely studied. Based on these backgrounds, this report presents the recent development trends of BaTiO₃-based dielectric materials for the next-generation MLCCs, and suggests promising candidates to replace BaTiO₃ ceramics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.378-378
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• 2007

In this study, liquid crystal (LC) aligning capabilities for homeotropic alignment on the $ZrO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $ZrO_x$ thin film were investigated. The uniform LC alignment on the $ZrO_x$ thin film surfaces and good thermal stabilities with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $ZrO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $ZrO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $ZrO_x$ thin film layer with. oblique electron beam evaporation.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.366-371
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• 2022

Recently many efforts have been made to develop a novel class of non-fullerene electron acceptor materials for high-performance organic solar cells. In this work, anthraquinone derivatives, TMAQ and THAQ, were prepared and their availability as electron acceptor materials for organic solar cells were investigated in terms of optical, thermal, electrochemical properties, and solar cell devices. Compared to TMAQ, a significant bathochromic shift of absorption band was observed for THAQ owing to intramolecular hydrogen-bond-assisted CT interactions. Thanks to the fused aromatic ring structure and benzoquinone unit, both TMAQ and THAQ exhibited a high thermal stability and an efficient electron reduction process. In particular, the intramolecular O-H---O=C hydrogen bond of THAQ plays an important role in improving the thermal stability and electron reduction properties. In the P3HT:acceptor solar cell system, THAQ-based devices had more than ca. 6 times higher power conversion efficiency than TMAQ -based devices. These results serve as a guide for developing high-efficient anthraquinone-based electron acceptor materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.260-261
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• 2008

In this study, we investigated the properties of Indium Zinc Oxide (IZO) films prepared in facing targets sputtering (FTS) system at room temperature as function of oxygen contents. As as-deposited films were rapidly thermal annealing on air atmosphere of $400^{\circ}C$ for 30s. As a result, the transmittance of IZO films increased with increasing oxygen flow in the visible range. After rapidly thermal annealing to films, the optical properties of films improved than films deposited at R.T, but the electrical properties decreased. Before RTA treatment, the lowest resistivity IZO is $5.4\times10^{-4}[\Omega{\cdot}cm]$ at oxygen gas flow. But, after RTA treatment, IZO films have the value of lowest resistivity at the lower oxygen gas ratio in compare with before RTA treatment. The resistivity of IZO films is $7.29\times10^{-4}[\Omega{\cdot}cm]$ at pure argon atmosphere.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.234-239
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• 2011

In this study, the heat transfer capability have been improved by using via-holes in FR4 PCB, when the LED lighting is designed to solve the thermal problem. The thermal resistance and junction temperature were measured by changing the dimension of FR4 PCB and size of via hole. As a result, when the dimension was increased initially, the thermal resistance and junction temperature was decreased rapidly, the ones was stabilized after the dimension of 200 $[mm^2]$. Also, the light output was improved up to maximum 17% by formation of via-hole and expansion of dimension in FR4 PCB. Therefore, the thermal resistance and junction temperature could be improved by expansion of PCB dimension and configuration of via-hole ability.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.414-419
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• 2012

In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from $SnO_2$ to ZnO in SnZnO lattice. With the $SnO_2$-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 $cm^2/Vs$ and $2{\times}10^8$ were achieved, respectively.

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.632-638
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• 2012

The prepartion of various metal oxide nanostructures via hydrothermal method, hydrolysis, thermal evaporation and electrospinning and their applications to chemoresistive sensors have been investigated. Hierarchical and hollow nanostructures prepared by hydrothermal method and hydrolysis showed the high response and fast responding kinetics on account of their high gas accessibility. Thermal evaporation and electrospinning provide the facile routes to prepare catalyst-loaded oxide nanowires and nanofibers, respectively. The loading of noble metal and metal oxide catalyst were effective to achieve rapid response/recovery and selective gas detection.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• 한국전기전자재료학회논문지
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• 제30권9호
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• pp.583-588
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• 2017

Thermal batteries are used in military power sources that require robustness and long storage life for applications in missiles and torpedoes. $FeS_2$ powder is currently used as a cathode material because of its high specific energy density, environmental non-toxicity, and low cost. $MS_2$ (M = Fe, Ni, Co) cathodes have been explored as novel candidates for thermal batteries in many studies; however, the discharge characteristics (1, 2, 3 plateau) of single cells in thermal batteries with different cathodes have not been elucidated in detail. In this study, we independently analyzed the discharge voltage and calculated the total polarizations of single cells using $MS_2$ cathodes. Based on the results of this study, we propose $NiS_2$ as a potential cathode material for use in thermal batteries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.391-392
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• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed and fabricated. We designed the microbolometer with a pixel size of $35\times35$, $44\times44{\mu}m^2$ and a fill factor of about 70 % by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Finally, we successfully fabricated the microbolometer by using surface MEMS technology, and the properties of bolometer have been measured as such that TCR and absorptance can be achieved above -2.5%/K and about 90% with titanium layer, respectively.