• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.9-16
• /
• 2005

This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

• Steel and Composite Structures
• /
• v.19 no.6
• /
• pp.1501-1510
• /
• 2015

The frequency selective surface (FSS) embedded hybrid composite materials have been developed to provide excellent mechanical and specific electromagnetic properties. Radar absorbing structures (RASs) are an example material that provides both radar absorbing properties and structural characteristics. The absorbing efficiency of an RAS can be improved using selected materials having special absorptive properties and structural characteristics and can be in the form of multi-layers or have a certain stacking sequence. However, residual stresses occur in FSS embedded composite structures after co-curing due to a mismatch between the coefficients of thermal expansion of the FSS and the composite material. In this study, to develop an RAS, the thermal residual stresses of FSS embedded composite structures were analyzed using finite element analysis, considering the effect of stacking sequence of composite laminates with square loop (SL) and double square loop (DSL) FSS patterns. The FSS radar absorbing efficiency was measured in the K-band frequency range of 21.6 GHz. Residual stress leads to a change in the deformation of the FSS pattern. Using these results, the effect of transmission characteristics with respect to the deformation on FSS pattern was analyzed using an FSS Simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.11-11
• /
• 2010

In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.289.2-289.2
• /
• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Investigative Magnetic Resonance Imaging
• /
• v.20 no.1
• /
• pp.36-43
• /
• 2016

Visualization of the tissue loss tangent property can provide distinct contrast and offer new information related to tissue electrical properties. A method for non-invasive imaging of the electrical loss tangent of tissue using magnetic resonance imaging (MRI) was demonstrated, and the effect of loss tangent was observed through simulations assuming a hyperthermia procedure. For measurement of tissue loss tangent, radiofrequency field maps ($B_1{^+}$ complex map) were acquired using a double-angle actual flip angle imaging MRI sequence. The conductivity and permittivity were estimated from the complex valued $B_1{^+}$ map using Helmholtz equations. Phantom and ex-vivo experiments were then performed. Electromagnetic simulations of hyperthermia were carried out for observation of temperature elevation with respect to loss tangent. Non-invasive imaging of tissue loss tangent via complex valued $B_1{^+}$ mapping using MRI was successfully conducted. Simulation results indicated that loss tangent is a dominant factor in temperature elevation in the high frequency range during hyperthermia. Knowledge of the tissue loss tangent value can be a useful marker for thermotherapy applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.605-608
• /
• 2001

Molybdenum disilicide is widely used for manufacturing high-temperature heating elements owing to its low electrical resistivity, good thermal conductivity, and ability to withstand oxidation at high temperatures. MoSi$_2$heating elements with 4-5wt% of montmorillonite type bentonite as plasticzer and a small amount of Si$_3$N$_4$, ThO$_2$, and B as additives was manufactured. Extruded rods of 3.7mmø and 6.7mmø diameter and 400mm long were fabricated using a vacuum extruder, which were then sinrered for 4-5 hrs. at the max. temperrature of 140$0^{\circ}C$. After 10 minute's oxidation treatment, the diameter of the rod is reduced. The heating elements thus prepared was stable at 1$700^{\circ}C$ and the physical properties such as specific electrical resistivity, hardness, apparent densisty, thermal expansion coefficient, and bending strength were almost identical with thoes of commercial heating elements. In this study we have tried to gain the practical knowledge of manufacturing MoSi$_2$heating elements so that it may be utilized later in a research of pilot scale and eventually be transferred to industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.70-73
• /
• 2004

Two different $SnO_2$ nanomaterials(nanowires and nanobelts) were synthesized from the thermal evaporation of ball-milled $SnO_2$ powders at $1350^{\circ}C$ without the presence of any catalysts, and their structural properties are then investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. This investigation reveals that the $SnO_2$ nanowires are single-crystalline and their growth direction is parallel to the [100] direction, and that the $SnO_2$ nanobelts are single crystalline and their shape is zigzag. In addition, photoresponse of a single $SnO_2$ nanowire was performed with light above-gap energy, and different characteristics of photoresponse were obtained for the nanowire at ambient atmosphere and in vacuum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.1
• /
• pp.86-92
• /
• 2022

Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga₂O₃ on semi-insulating Ga₂O₃ substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga₂O₃ substrates. In this work, we investigate and compare self-heating and device performance of β-Ga₂O₃ MESFETs on substrates of semi-insulating Ga₂O₃ and 4H-SiC. Electron mobility in β-Ga₂O₃ is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga₂O₃ lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.390-391
• /
• 2009

Recently, composite hollow bushings have been increasingly employed mainly from the various characteristics. Composite bushings are superior to porcelain bushings in several respects, including lighter weight, better anti-pollution and anti-explosion properties, and easer manufacturing. This paper deals with the optimal thermal fitting for improved tightness characteristics of composite bushing. Two types of composite bushings were fabricated. For optimal fitting process, it is necessary using adhesive and designed internal structure of flange and FRP tube. In this study, for improved tightness characteristics of composite bushing has prominence and interface tolerance of flange and FRP tube. From FE-SEM analysis the adhesive layers were different with interface tolerance, sample 1 and 2 which have respective about $120{\mu}m$ and $50{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.350-353
• /
• 1999

This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.