• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.365-370
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• 1996

Electrochromic $WO_3$ films were prepared by using an electron-beam deposition method. The dependence of the chemical stability of film on the substrate temperature was studied. From the experimental results, The optical property and chemical stability of as-deposited films strongly depended on the substrate temperature. The $WO_3$ film prepared at a substrate temperature of $80^{\circ}C$ was found to be the most stable when subjected to repeated coloring and bleaching cycles in an organic 0.6M $LiClO_4$ solution.

• Solar Energy
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• v.17 no.4
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• pp.67-74
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• 1997

The electrochromic $WO_3$ thin films were prepared by using the electron beam deposition technique. The influences of vacuum pressure were examined in terms of the surface morphology and the electrochromic properties of films. From the results, the electrochromic behavior of electron beam deposited films strongly depends on the vacuum pressure during deposition. The film prepared under a vacuum pressure of $5{\times}10^4$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in an aqueous acid electrolyte of 1M $H_2SO_4$. It was also found that the degraded film by repeated cycling in the aqueous acid solution changed the grain shape of film surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1215-1217
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• 2005

One of the important problems in recent AC-PDP technology is the image sticking. In this research, we have investigated the PDP cell with constraint deposition MgO on phosphor, the electrical and optical properties in the PDP cell were examined. Also, we have investigated the correlation with image sticking and degraded MgO protective layer, phosphor in AC-PDP. As a result, we measured the secondary electron emission coefficient ${\gamma}$, discharge characteristics and Brightness for the constraint degraded phosphor are compared with those of nondegraded phosphor.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.193-197
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• 2023

Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In₂O₂ (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10^-3 Ω^-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10^-2 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.46-49
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• 1999

Lithium cobalt oxide cathode for thin-film rechargeable lithium batteries were fablicated by electron-beam evaporation. Annealed lithium cobalt oxide, which was deposited on to stainless steel substrate, showed well-developed (003) planes of the hexagonal structure and potential plateau at $\~3.9 V$. Lithium cobalt oxide thin films had the stoichiometric Li/co ratio at high deposition rates and exhibited high discharge capacity at $15{\AA}/s$. As the annealing temperature increased, discharge capacity increased with maximum value at $700^{\circ}C$, but showed low capacity as a result of reaction with substrate above $700^{\circ}C$. Unuiformity of the lithium and cobalt in the depth profile gave initial capacity loss with charge/discharge performance.

• 대한치과보철학회:학술대회논문집
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• 2001.11a
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• pp.32-32
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.187-187
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• 2012

In this report, the plasmonic nanopores of less than 5 nm diameter were fabricated on the apex of the pyramidal cavity array. The metallic pyramidal pit cavity can also utilized as the plasmonic bioreactor, and the fabricated Au or Al metallic nanopore can provide the controllable translocation speed down using the plasmonic optical force. Initially, the SiO2 nanopore on the pyramidal pit cavity were fabricated using conventional microfabrication techniques. Then, the metallic thin film was sputter-deposited, followed by surface modification of the nanometer thick membrane using FESEM, TEM and EPMA. The huge electron intensity of FESEM with ~microsecond scan speed can provide the rapid solid phase surface transformation. However, the moderate electron beam intensity from the normal TEM without high speed scanning can only provide the liquid phase surface modification. After metal deposition, the 100 nm diameter aperture using FIB beam drilling was obtained in order to obtain the uniform nano-aperture. Then, the nanometer size aperture was reduced down to ~50 nm using electron beam surface modification using high speed scanning FESEM. The followed EPMA electron beam exposure without high speed scanning presents the reduction of the nanosize aperture down to 10 nm. During these processes, the widening or the shrinking of the nanometer pore was observed depending upon the electron beam intensity. Finally, using 200 keV TEM, the diameter of the nanopore was successively down from 10 nm down to 1.5 nm.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.280-284
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• 2020

Electron beam irradiation is widely used as a type of surface modification technology to advance surface properties. In this study, the effect of electron beam irradiation on properties, such as surface hardness, wear resistance, roughness, and critical load of Titanium Aluminium nitride (TiAlN) films was investigated. TiAlN films were deposited on the SKD-61 substrate by using cathode arc ion plating. After deposition, the films were bombarded with intense electron beam for 10 minutes. The surface hardness was increased up to 4520 HV at electron irradiation energy of 1500 eV. In addition, surface root mean square (RMS) roughness of the films irradiated at 1500 eV shows the lowest roughness of 484 nm in this study.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.85-91
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• 2006

Electron Beam Physical Vapor Deposition (EB-PVD) was applied to fabricate a thin film YSZ electrolyte with large area on the porous NiO-YSZ anode substrate. Microstructural and thermal stability of the as-deposited electrolyte film was investigated via SEM and XRD analysis. In order to obtain an optimized YSZ film with high stability, both temperature and surface roughness of substrate were varied. A structurally homogeneous YSZ film with large area of $12\times12\;cm^2$ and high thermal stability up to $900^{\circ}C$ was fabricated at the substrate temperature of $T_s/T_m$ higher than 0.4. The smoother surface was proved to give the better film quality. Precise control of heating and cooling rate of the anode substrate was necessary to obtain a very dense YSZ electrolyte with high thermal stability, which affords to survive after post heat treatment for fabrication a cathode layer on it as well as after long time operation of solid oxide fuel cell at high temperature.