• Journal of the Korean Society for Precision Engineering
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• v.25 no.3
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• pp.15-22
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• 2008

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.23-36
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• 2004

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process has been developed for sub-0.l${\mu}{\textrm}{m}$ T-shaped gate formation in the HEMT devices for millimeter-wave frequencies. For the exposure process by electron to we newly and efficiently modeled the inner-shell electron scattering and its discrete energy loss with an incident electron for multi-layer resists and heterogeneous multi-layer targets in the MC simulation. In order to form the T-gate shape in resist layers, we usually use the different developer for each resist layer to obtain good reproducibility in the fabrication of HEMT devices. To model accurately the real fabrication process of electron beam lithography, we have applied the different developers in trilayer resist system By using this model we have simulated and analyzed 0.l${\mu}{\textrm}{m}$ T-gate fabrication process in the HEMT devices, and showed our simulation results with the SEM observations of the T-shaped gate process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.185-186
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.665-666
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1875-1878
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• 2005

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with electron beam gun head unit is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included ceramic isolation plate and main body which are essentially constructed for electron beam gun head unit are designed and manufactured. And this electron beam gun head unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.558-564
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• 2009

To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.555-556
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• 2006

In this paper, we have proposed a novel process using two-step electron beam lithography to fabricate 20 nm T-gates for high performance MODFETs. Two-step lithography reduces electron forward scattering by defining the foot on a thin (100 nm) bottom-layer of polymethyl methacrylate (PMMA) at the second step, the T-gate head having been developed at the first step. Adopting a low temperature development technique for the second step reduces the detrimental effect of head exposure on foot definition. We have shown that 20 nm T-gate can be patterned with this process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.430.1-430.1
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• 2014

According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.976-979
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.