• Korean Journal of Materials Research
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• v.27 no.6
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• pp.345-349
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• 2017

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2019.05a
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• pp.420-421
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• 2019

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Korean Journal of Food Science and Technology
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• v.30 no.6
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• pp.1362-1366
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• 1998

The sterilizing effect of electron beam was compared with that of gamma irradiation for commercial ginseng powders. White and red ginseng powders were contaminated by about $10^5\;CFU/g$ of total bacteria and by $10^3\;CFU$ of coliforms only in white ginseng powder. Data of microbial population for the sterilizing effect of electron beam irradiation showed that no microorganisms were detected in the samples irradiated up to 7.5 kGy for total aerobic bacteria and 2.5 kGy for molds and coliforms. Such doses were effective for controlling the microbial growth in the samples during 4 months of storage at room temperature. Decimal reduction doses $(D_{10}$ value) on the initial bacterial populations were $2.85{\sim}3.75\;kGy$ in electron beam and $2.33{\sim}2.44\;kGy$ in gamma irradiation, which were influenced by the initial microbial loads and the energy applied. Compared with gamma irradiation, electron beam showed a similar result in its sterilizing effect on ginseng powders, suggesting its potential utilization in due time.

• Progress in Medical Physics
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• v.28 no.2
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• pp.49-53
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• 2017

The energy distribution was calculated for an electron beam from an electron linear accelerator developed for medical applications using computational methods. The depth dose data for monoenergetic electrons from 0.1 MeV to 8.0 MeV were calculated by the DOSXYZ/nrc code. The calculated data were used to generate the energy distribution from the measured depth dose data by numerical iterations. The measured data in a previous work and an in-house computer program were used for the generation of energy distribution. As results, the mean energy and most probable energy of the energy distribution were 5.7 MeV and 6.2 MeV, respectively. These two values agreed with those determined by the IAEA dosimetry protocol using the measured depth dose.

• Progress in Medical Physics
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• v.9 no.2
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• pp.65-71
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• 1998

The aims are to evaluate the effects of an 1.0 cm acrylic plate and SSD on the dose profile and depth dose distribution of 9 MeV electron beam and to analyse adequacy for using an acrylic plate to reduce energy of electron beams. An acrylic plate of 1.0 cm thickness was used to reduce energy of 9 MeV electron beam to 7 MeV. The plate was put on an electron applicator at 65.4 cm distance from x-ray target. The size of the applicator was 10${\times}$l0cm at 100 cm SSD. For 100cm, l05cm and 110cm SSD, depth dose on beam axis and dose profiles at d$\_$max/ on two principal axes were measured using a 3D water phantom. From depth dose distributions, d$\_$max/, d$\_$85/, d$\_$50/ and R$\_$p/, surface dose, and mean energy and peak energy at surface were compared. From dose profiles flatness, penumbra width and actual field size were compared. For comparison, 9 MeV electron beams were measured. Surface dose of 7 MeV electron beams was changed from 85.5% to 82.2% increasing SSD from 100 cm to 110 cm, and except for dose buildup region, depth dose distributions were independent of SSD. Flatness of 7 MeV ranged from 4.7% to 10.4% increasing SSD, comparing 1.4% to 3.5% for 9 MeV. Penumbra width of 7 MeV ranged from 1.52 cm to 3.03 cm, comparing 1.14 cm to 1.63 cm for 9 MeV. Actual field size increased from 10.75 cm to 12.85 cm with SSD, comparing 10.32 cm to 11.46 cm for 9 MeV. Virtual SSD's of 7 and 9 MeV were respectively 49.8 cm and 88.5cm. In using energy reducer in electron therapy, depth dose distribution were independent of SSD except for buildup region as well as open field. In case of using energy reducer, increasing SSD made flatness to deteriorate more severely, penumbra width more wide, field size to increase more rapidly and virtual SSD more short comparing with original electron beam. In conclusion, it is desirable to use no energy reducer for electron beam, especially for long SSD.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.325-330
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• 2006

In order to verify the integrity of the first wall (FW) of the International Thermonuclear Experimental Reactor (ITER), the fabricated Cu/SS mock-up is tested in the JAEA Electron Beam Irradiation Test Stand (JEBIS). To fabricate the Cu/SS mock-up, CuCrZr and 316L authentic stainless steel (SS316L) are used for Cu alloy and steel, respectively The hot isostatic pressing (HIP) is used as a manufacturing method with a $1050^{\circ}C$ and 150 MPa. The high heat flux (HHF) test is performed using an electron beam with a heat flux of $5MW/m^2$ and a cycle of 15-sec on time and 30-sec off time. The temperature measurement in the HHF test shows good agreement with the results obtained from ANSYS code analysis, which is used for determining the HHF test conditions.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.6
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• pp.391-396
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• 2012

The destruction study of $NF_3$ gas emitted from the semiconductor industry is performed with electron-beam technology. Absorbed dose (kGy) and current ranged from 0 (0) to 400 kGy (20 mA). The concentration of $NF_3$ gas ranged from 500 to 2,000 ppm. In order to assess the effect of a residence time on DRE (Destruction and Removal Efficiency, %), experiments also conducted at different irridiation times of 5 sec, 10 sec, 15 sec and 20 sec respectively. As absorbed dose and current increased, DRE of $NF_3$ was also increased. However, DRE (%) of $NF_3$ decreased with increasing the concentration of $NF_3$ gas. The DRE of $NF_3$ was about 90% at an absorbed dose of 400 kGy.

• Journal of Radiation Industry
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• v.5 no.4
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• pp.365-370
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• 2011

Electrospun nanofibers prepared with synthetic biodegradable polymer have some limitations in regulating adhesion, proliferation, and spreading of cells because of their surface hydrophobicity and absence of cell-interaction. In this study, we functionalized the electrospun poly(L-lactide-co-${\varepsilon}$-caprolactone) (PLCL) nanofibers with acrylic acid (AAc) to modulate their surface hydrophilicity using electron-beam irradiation method and then measured grafting ratio of AAc, water contact angle, and ATR-FTIR of AAc-grafted nanofibers. A grafting ratio of AAc on the nanofibers was increased as irradiation dose and AAc concentration were increased. AAc-grafted nanofibers also have higher wettability than non-modified nanofibers. In conclusion, those surface-modified nanofibers may be an essential candidate to regulate cell attachment in tissue engineering applications.