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http://dx.doi.org/10.3740/MRSK.2017.27.6.345

Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor  

Cho, In-Hwan (Neutron Utilization Research Division, Korea Atomic Energy Research Institute)
Park, Hai-Woong (Department of Energy Materials and Chemical Engineering, Korea University of Technology and Education)
Kim, Chan-Joong (Neutron Utilization Research Division, Korea Atomic Energy Research Institute)
Jun, Byung-Hyuk (Neutron Utilization Research Division, Korea Atomic Energy Research Institute)
Publication Information
Korean Journal of Materials Research / v.27, no.6, 2017 , pp. 345-349 More about this Journal
Abstract
The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.
Keywords
InGaZnO film; oxide semiconductor; electron beam irradiation; electrical property; optical property; oxygen vacancy;
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