• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.675-679
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• 2004

The existing conjugated blue emitting material polymer which has been used for the two-wavelength method white-emission has good stability and low operating voltage as merits, but the imbalanced carrier transport has been indicated as problem area. We have introduced a novel blue emitting material having perylene moiety unit with hole transporting ability and blue emitting property and triazine moiety unit with electron transporting ability into the same host chain. We have synthesized N-[p-(perylen-3-y1)pheny1]methacry1 amide (PPMA) monomer and [N-(2,4-dipheny1-1,3,5-triazine)pheny1 methacry1 amide] (DTPM) monomer having blue light-emitting unit and electron transport unit, respectively by three steps. A novel non-conjugated blue emitting material Poly[N -[p­(perylene-3-y1) pheny1] methacry1 amide-co-N-[P-(4,6-dipheny1-1,3,5-triazine-2-y1]pheny1]methacry1 amide] (PPPMA-co-DTPM) copolymer having electron transporting unit was synthesized by the solution polymerization of PPMA and DTPM monomers with an AIBN initiator and showed high yield of $75{\%}$. It was very soluble in common organic solvents, and the fabrication of the thin film using a spin coating method was very simple. The PPPMA exhibited a good thermal stability.

• 한국진공학회지
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• 제13권2호
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• pp.59-64
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• 2004

반도체 레이저를 광원으로 사용하는 원자흡수분광 방법으로 금속증기의 증착 공정을 감시하는 연구를 수행하였다. 전자빔 가열 방식을 이용하여 gadolinium (Gd) 금속을 대량으로 증발시켰다. 파장 영역이 770-794 nm (중심파장 780 nm)인 반도체 레이저빔과 388-396 nm 영역의 제 2 고조파 빔을 진공용기에 입사시켜 증발되는 금속증기의 원자흡수 스펙트럼을 실시간으로 기록하였다. 흡수 스펙트럼을 분석하여 증기의 원자밀도를 구했다. 전자빔 출력을 변화시키면서 측정한 원자밀도를 수정 결정 모니터 장치를 사용하여 측정한 증착률과 비교하였다. 산업적으로 많이 사용되는 Ti 등의 증착 공정 감시에 이 실험에서 구현한 레이저 분광장치를 적용할 수 있다는 것을 제시하였다.

• 한국생산제조학회지
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• 제25권5호
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• pp.362-367
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• 2016

Recently, wireless charging systems have expanded their applications from household electrical appliances to outdoor activity devices. In wireless charging systems, solar cells have versatile advantages, such as abundant raw materials within the earth, reasonable prices of products, and highest power conversion efficiency. In this study, the photovoltaic effect between a silicon solar cell and a photon of infrared wavelength was simulated using a Shockley diode equation. A solar cell power charging system was then set up to: 1) clarify mechanisms of the charging interaction based on the photovoltaic effect with a laser source, and 2) verify interdependency of the parameters: laser settings and geometrical position between a solar cell and the laser. As was observed, the solar cell generates more power when the photon was irradiated uniformly, intensively, and vertically on the surface of the solar cell.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.185-188
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• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

• 대한의용생체공학회:의공학회지
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• 제7권2호
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• pp.111-112
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• 1986

Radiation-induced fibrosarcoma tumors were grown on the flanks of C3H mice. The mice were divided into two groups. One group was injected with Photofrin II, intravenously (2.5mg/kg body weight). The other group received no Photofrin II. Mice from both groups were irradialed for approximately 15 minutes at 100, 300, or 500 mW/cm2 with the argon (488nm/514.5 nm), dye(628nm) and gold vapor (pulsed 628 nm) laser light. A photosensitizer behaved as an added absorber. Under our experimental conditions, the presence of Photolfrin II increased surface temperature by at least 40% and the temperature rise due to 300 mW/cm2 irradiation exceeded values for hyperthermia. Light and temperature distributions with depth were estimated by a computer model. The model demonstrated the influence of wavelength on the thermal process and proved to be a valuable tool to investigate internal temperature rise.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• 한국재료학회지
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• 제17권7호
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• 한국재료학회지
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• 제16권4호
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• pp.253-256
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• 2006

The blue emitting OLEDs using GDI host-dopant phosphors have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)- triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/GDI602:GDI691/Alq3/LiF/Al were obtained by in-situ deposition of Alq3, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Blue OLEDs fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum power efficiency of 1.1 lm/W at 11 V with the peak emission wavelength of 464 nm.

• 분석과학
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• 제13권5호
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• pp.565-572
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• 2000

파장분산형 엑스선분광분석기에 의한 Xe의 전자탐침미세분석시 표준물질에 대해 기술하였다. 실험결과 순수금속 표준시편을 사용할 수 없는 Cs, I, Ba의 표준물질로는 Csl와 $BaCO_3$가 가장 적당한 것으로 나타났다. 빔전류량 10-30 nA에서 Csl, CsBr로부터 측정한 Cs의 엑스선 세기는 빔전류량에 비례하였다. PET 결정 사용시 In-Nd 원소들의 원자번호 대 엑스선 세기간의 직선성은 가속전압 25-30 kV 범위에서 직선회귀 계수 R=0.99 이상의 좋은 상관성을 보였다. 직선회귀식으로 구한 Xe의 엑스선 세기 표준값은 가속전압 25 kV에서 Te의 엑스선 세기 표준값 보다 1.095배 높게 나타났다.