• Journal of the Korean Ceramic Society
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• 제49권5호
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• pp.404-411
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• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제20권3호
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제19권10호
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Korean Journal of Food Science and Technology
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• 제35권6호
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• pp.1117-1123
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• 2003

The effects of heat treatment on the physical and physical and physiological properties of wax gourd (Benincasa hispida) were examined. The applied heat treatments were autoclaved at $121^{\circ}C$ for 1 hr, boiled for 30 min, and microwaved at 680 W for 5 min. The water retention capacity (WRC) of the wax gourds was 9.43 g/g for the microwaved samples, 5.12 g/g for the boiled samples, 4.63 g/g for the raw samples, and 2.61 g/g for the autoclaved samples. Heat treatment caused to increase swelling by up to $4.4{\sim}7.8\;mL/g$. Calcium binding capacity of heat-treated wax gourd increased in the order of microwaved, boiled, raw, autoclaved samples. Scanning electron microscopy (SME) showed that autoclaving caused the most severe structural modifications, while microwave treatment produced the least modifications. The retarding effect on glucose and bile acid transport depended on the heat treatment. Only boiling showed the glucose retardation effect. Bile acid retardation effect increased in order of boiling (22.9%), autoclaving (17.1%), microwave treatment (14.3%), and raw wax gourd (8.6%). The cadmium retardation effect was significantly high in all samples.

• Journal of the Korean Vacuum Society
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• 제7권1호
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• pp.66-71
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• 1998

Two kinds of $Ga_2S_3:Er$ (type A and type B) single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The single crystals were crystallized into a monoclinic structure. The optical energy band gaps were found to 3.375 eV for the $Ga_2S_3:Er$ (type A) single crystal and 3.365 eV fir the $Ga_2S_3:Er$ (type B) single crystal at 13K. When the $Ga_2S_3:Er$ (type A and type B) single crystals were excited by the 325 nm-line of a Cd-He laser, Photoluminescence spectra of the $Ga_2S_3:Er$ (type A) single crystal exhibited blue emission band peaked at 444 nm and green and red emission bands peaked at 518 nm and 690 nm. Pgitikynubescebce soectra if the $Ga_2S_3:Er$ (typeB) single crystal showed green and red emission bands peaked at 513 nm and 695 nm. Sharp emission peaks in the two kinds if $Ga_2S_3:Er$ single crystal were observed near 525 nm, 553 nm, 664 nm, 812 nm, 986 nm, and 1540 nm and analysed as originating from the electron transitions between the energy levels of $Er^{3+}$ ion.

• Journal of Life Science
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• 제19권8호
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• pp.1159-1163
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• 2009

It has been postulated that endoplasmic (ER) stress is involved in the development of several diseases. However, the detailed molecular mechanisms have not been fully understood. Therefore, we characterized a genetic network of genes induced by ER stress using cDNA microarray and gene set expression coherence analysis (GSECA), and identified gene function as well as several transcription regulators associated with ER stress. We analyzed time-dependent gene expression profiles in thapsigargin-treated Sk-Hep1 using an oligonucleotide expression chip, and then selected functional gene sets with significantly high expression coherence which was processed into functional clusters according to the expression similarities. The functions related to sugar binding, lysosome, ribosomal protein, ER lumen, and ER to golgi transport increased, whereas the functions with mRNA processing, DNA replication, DNA repair, cell cycle, electron transport chain and helicase activity decreased. Furthermore, functional clusters were investigated for the enrichment of regulatory motifs using GSECA, and several transcriptional regulators associated with regulation of ER-induced gene expression were found.

• Journal of the Microelectronics and Packaging Society
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• 제9권1호
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• Applied Microscopy
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• 제28권2호
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• pp.171-180
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• 1998

In the present study, the vacuolar apparatus were investigated in the hepatocytes of rats treated with DA by transmission electron microscopy of conventional and cytochemical thin sections. In the rats after 20 min of dehydrocholic acid treatment, the cis Golgj cisterns were sacculated in line. The saccule occasionally occured by elongation and attenuated neck. The lysosomes also showed protrudent saccule. The vesicles were observed near the cis Golgi cisterns, lysosome and bile canaliculi. Some of the vesicles appeared to be fused to bile canaliculi. The cis Golgi cisterns usually faced toward the bile canaliculi both in normal and experimental groups. The cis Golgi cisterns, protrudent saccule and vesicles were almost devoid of visible contents. The osmium deposits were heavy on the protrudent saccule as well as on the cis Golgi cisterns or on the vesicles isolated near by, but they were light or not observed on the vesicles in the immediate vicinity of bile canaliculi. The acid phosphatase activities appeared on the lysosome and vesicles located near by, but did not appear on the vesicles as approaching closer to the bile canaliculi. The evidence suggests that the vesicles are derived from the cis Gogi cistern and lysosomes and fuse to bile canaliculi for exocytosis, and that the activity in the vesicles is diminished as approaching closer to the bile canaliculi.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Membrane Journal
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• 제32권6호
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• pp.486-495
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• 2022

This study presents the improved recovery efficiency of rare metal ions through the modified separation membrane wettability and hydrogen ion permeation in the anion exchange membrane (AEM) under the recovery process of combined electrodialysis and solvent extraction. Specifically, the wettability of the separator was enhanced by hydrophilic modification on one separator surface through polydopamine (PDA) and lipophilic modification on the other surface through SiO₂ or graphene oxide (GO). In addition, the modified surface of AEM with polyethyleneimine (PEI), PDA, poly(vinylidene fluoride) (PVDF), etc. reduces the water uptake and modify the pore structure for proton ions generation. The suppressed transport resulted in the reduced hydrogen ion permeation. In the characterization, the surface morphology, chemical properties and composition of membrane or AEM were analyzed with Scanning Electron Microscopy (SEM) and Fourier Transform-Infrared Spectroscopy (FT-IR). Based on the analyses, improved extraction and stripping and hydrogen ion transport inhibition were demonstrated for the copper ion recovery system.