• 제목/요약/키워드: Electron transfer layer

검색결과 133건 처리시간 0.03초

METALLIC INTERFACES IN HARSH CHEMO-MECHANICAL ENVIRONMENTS

  • Yildiz, Bilge;Nikiforova, Anna;Yip, Sidney
    • Nuclear Engineering and Technology
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    • 제41권1호
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    • pp.21-38
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    • 2009
  • The use of multi scale modeling concepts and simulation techniques to study the destabilization of an ultrathin layer of oxide interface between a metal substrate and the surrounding environment is considered. Of particular interest are chemo-mechanical behavior of this interface in the context of a molecular-level description of stress corrosion cracking. Motivated by our previous molecular dynamics simulations of unit processes in materials strength and toughness, we examine the challenges of dealing with chemical reactivity on an equal footing with mechanical deformation, (a) understanding electron transfer processes using first-principles methods, (b) modeling cation transport and associated charged defect migration kinetics, and (c) simulation of pit nucleation and intergranular deformation to initiate the breakdown of the oxide interlayer. These problems illustrate a level of multi-scale complexity that would be practically impossible to attack by other means; they also point to a perspective framework that could guide future research in the broad computational science community.

순환전류법을 이용해 ZnO 금속산화물과 Graphene을 동시에 제막한 전자수송층을 갖는 유기태양전지의 특성 (Characteristics of Organic Solar Cell having an Electron Transport Layer co-Deposited with ZnO Metal Oxide and Graphene using the Cyclic Voltammetry Method)

  • 안준섭;한은미
    • 마이크로전자및패키징학회지
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    • 제29권1호
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    • pp.71-75
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    • 2022
  • Graphene oxide를 ZnCl2:NaCl 전해질과 함께 교반한 후 순환 전압전류법에 의해 전기화학적으로 제막하여 유기태양전지용 전자수송층 제막과정을 단순화하고 이를 갖는 유기태양전지를 제작하였다. 소자의 구조는 FTO/ZnO:graphene 전자수송층/P3HT:PCBM 광활성층/PEDOT:PSS 정공수송층/Ag이다. ETL의 형태 및 화학적 특성은 주사전자현미경(scanning electron microscopy, SEM), X선 광전자 분광법(X-ray photoelectron spectroscopy, XPS), 라만 분광법으로 확인하였다. XPS 측정결과 ZnO 금속산화물 및 탄소결합이 동시에 확인되었고, 라만 분광법에서 ZnO와 graphene 피크를 확인하였다. 제작한 태양전지의 전기적 특성을 솔라시뮬레이터로 측정하였고 0.05 V/s의 속도로 2회 제막한 ETL 소자에서 1.94%의 가장 높은 광전변환효율을 나타내었다.

고휘도 발광을 위한 유기 EL 소자 제작 (The fabrication of organic EL device for high contrast)

  • 여철호;손철호;박정일;장선주;박종화;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.166-169
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    • 2000
  • The Organic Electroluminescence (OEL) device, that was consisted of ALq3(8-hydroxyquinoline aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine), has been used. We investigated characteristics of brightness and current density about OEL that was oxidated each layers. We used two samples that were fabricated each continuous and non-continuous method. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1530cd/$\textrm{cm}^2$ at a current density of 100mA/$\textrm{cm}^2$. A luminance of over 2600cd/$\textrm{cm}^2$ was also observed after the final fabrication process.

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무전해 니켈 도금을 이용한 절연기판상의 미세전도성 패턴 제조 (Microfabrication of Micro-Conductive patterns on Insulating Substrate by Electroless Nickel Plating)

  • 이봉구;문준희
    • 대한금속재료학회지
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    • 제48권1호
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    • pp.90-100
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    • 2010
  • Micro-conductive patterns were microfabricated on an insulating substrate ($SiO_2$) surface by a selective electroless nickel plating process in order to investigate the formation of seed layers. To fabricate micro-conductive patterns, a thin layer of metal (Cu.Cr) was deposited in the desired micropattern using laser-induced forward transfer (LIFT). and above this layer, a second layer was plated by selective electroless plating. The LIFT process. which was carried out in multi-scan mode, was used to fabricate micro-conductive patterns via electroless nickel plating. This method helps to improve the deposition process for forming seed patterns on the insulating substrate surface and the electrical conductivity of the resulting patterns. This study analyzes the effect of seed pattern formation by LIFT and key parameters in electroless nickel plating during micro-conductive pattern fabrication. The effects of the process variables on the cross-sectional shape and surface quality of the deposited patterns are examined using field emission scanning electron microscopy (FE-SEM) and an optical microscope.

Electrochemical oxidation-reduction and determination of urea at enzyme free PPY-GO electrode

  • Mudila, Harish;Prasher, Parteek;Rana, Sweta;Khati, Beena;Zaidi, M.G.H.
    • Carbon letters
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    • 제26권
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    • pp.88-94
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    • 2018
  • This manuscript explains the effective determination of urea by redox cyclic voltammetric analysis, for which a modified polypyrrole-graphene oxide (PPY-GO, GO 20% w/w of PPY) nanocomposite electrode was developed. Cyclic voltammetry measurements revealed an effective electron transfer in 0.1 M KOH electrolytic solution in the potential window range of 0 to 0.6 V. This PPY-GO modified electrode exhibited a moderate electrocatalytic effect towards urea oxidation, thereby allowing its determination in an electrolytic solution. The linear dependence of the current vs. urea concentration was reached using square-wave voltammetry in the concentration range of urea between 0.5 to $3.0{\mu}M$ with a relatively low limit of detection of $0.27{\mu}M$. The scanning electron microscopy was used to characterize the morphologies and properties of the nanocomposite layer, along with Fourier transform infrared spectroscopy. The results indicated that the nanocomposite film modified electrode exhibited a synergistic effect, including high conductivity, a fast electron-transfer rate, and an inherent catalytic ability.

비정질 n형 Si 박막을 이용한 자기터널링 트랜지스터 제작과 특성 (Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films)

  • 이상석;이진용;황도근
    • 한국전기전자재료학회논문지
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    • 제18권3호
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    • pp.276-283
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    • 2005
  • Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

Charge Doping in Graphene on Highly Polar Mica

  • 심지혜;고택영;류순민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.430-430
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    • 2011
  • Graphene, one single atomic layer of graphite, has attracted extensive attention in various research fields since its first isolation from graphite. Application in the future electronics requires better understanding and manipulation of electronic properties of graphene supported on various solid substrates. Here, we present a study on charge doping and morphology of graphene prepared on atomically flat and highly polar mica substrates. Ultra-flat single-layer graphene was prepared by micro-exfoliation of graphite followed by deposition on cleaved mica substrates. Atomic force microscopy (AFM) revealed presence of ultra-thin water films formed in a layer-by-layer manner between graphene and mica substrates. Raman spectroscopy showed that a few angstrom-thick water films efficiently block electron transfer from graphene to mica. Hole doping in graphene caused by underlying mica substrates was also visualized by scanning Kelvin probe microscopy (SKPM).

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줄 가열 변화에 따른 박막 트랜지스터 내 포논 열 흐름에 대한 수치적 연구 (Effect of Joule Heating Variation on Phonon Heat Flow in Thin Film Transistor)

  • 진재식;이준식
    • 대한기계학회논문집B
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    • 제33권10호
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    • pp.820-826
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    • 2009
  • The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.

이상적인 열방산 효과를 위한 GaN on Diamond 구조의 제안과 접합매개층 종류에 따른 열전달 시뮬레이션 비교 (Suggestion and Design of GaN on Diamond Structure for an Ideal Heat Dissipation Effect and Evaluation of Heat Transfer Simulation as Different Adhesion Layer)

  • 김종철;김찬일;양승한
    • 한국전기전자재료학회논문지
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    • 제30권5호
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    • pp.270-275
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    • 2017
  • Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

고분자/저분자 발광재료의 혼합비에 따른 유기 전계발광 소자의 에너지 전달 및 발광특성 (Energy Transfer and Emission Properties of Organic Electroluminescent Device According to Polymer/Dye Mixing Ratio)

  • 김주승;서부완;구할본;이경섭;박복기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.997-999
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    • 1999
  • We fabricated white light-emitting organic electroluminescent device which have a mixed single emitting layer containing poly(N-vinylcarbazole)[PVK], tris(8-hydroxyquinoline)aluminum[Alq3] and poly(3-hexylthiophene)[P3HT] and investigated the emission properties of it. We expect to obtain a blue light from PVK, green light from Alq3 and red light from P3HT The fabricated device emits white light over 18V with slight orange light. We think that the energy transfer in a mixed layer occurred from PVK to $Alq_3$ and P3HT resulted in decreasing the blue light intensity from PVK. With mixing of N, N'-diphenyl-N, N'-(3-methylphenyl)-[1,1'-biphenyl]-4, 4'-diamine[TPD], hole transport material, to the emitting layer, the luminance intensity of device was increased 50 times than that of the device which not contain TPD. We find that the efficiency of the white light electroluminescent device can be improved by injecting electron more effectively and blue light need to improve the color purity of white light.

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