• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.163.1-163.1
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• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2000.05a
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• pp.52-55
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• 2000

The effects of environmental conditions, initial dissolved oxygen concentrations, pH, and the presence of electron carrier vitamin B$_{12}$ , on the reduction rate of TNT by Fe$^{0}$ was Quantitatively analyzed using a batch reactor. In all experiments, TNT reduction was best described with a first order reaction and the reduction rate decreased with the increase in the initial DO concentration. However, the specific reaction rate did not decrease linearly with the increase in the initial DO concentration. In the presence of HEPES buffer 0.2 and 2.0 mM(pH 5.7$\pm$0.2), the specific reaction rate increased more than 5.8 times, which showed reduction rate is rather significantly influenced by the pH of the solution. To test the possibility of reaction rate enhancement, well-known electron carrier(or mediator), vitamin B$_{12}$ has augmented besides Fe$^{0}$ . In the presence of 8.0 $\mu\textrm{g}$/L of vitamin B$_{12}$ , the specific reaction rate increased as much as 14.6 times. The results indicate that the addition of trace amount of vitamin B$_{12}$ can be a promising rate controlling option for the removal of organics using a Fe$^{0}$ filled permeable reactive barrier.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.298-305
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• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.222-232
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• 2000

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.189-198
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• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.164.2-164.2
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• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.2
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• pp.189-194
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• 2018

Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.