• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.47-47
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• 2004

• 한국세라믹학회지
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• 제46권5호
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• pp.510-514
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• 2009

The microstructure and mechanical behavior of deformed silicon were characterized using transmission electron microscopy and nanoindentation. Structural defects such as stacking faults and dislocations were observed through the diffraction contrast in transmission electron microscopy. The mechanical properties of deformed Si and 111 Si wafer and mechanical behaviors during contact loading were also characterized using nanoindentation. The hardness values of silicon samples were ${\sim}10$ GPa and the elastic modulus were varied with indentation conditions. Elbow or pop-out behaviors were found in load-displacement curves of silicon samples during nanoindentation. Deformed silicon showed 'pop-out' behavior more frequently under the load of 10 mN, which is attributed to the structural defects in deformed silicon.

• 한국세라믹학회지
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• 제48권6호
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• pp.549-558
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• 2011

Application of a generalized equivalent circuit including the electrode condition for the Hebb-Wagner polarization in the frequency domain proposed by Jamnik and Maier can provide a consistent set of material parameters, such as the geometric capacitance, partial conductivities, chemical capacitance or diffusivity, as well as electrode characteristics. Generalization of the shunt capacitors for the chemical capacitance by the constant phase elements (CPEs) was applied to a model mixed conducting system, $Ag_2S$, with electron-blocking AgI electrodes and ion-blocking Pt electrodes. While little difference resulted for the electron-blocking cell with almost ideal Warburg behavior, severely non-ideal behavior in the case of Pt electrodes not only necessitates a generalized transmission line model with shunt CPEs but also requires modelling of the leakage in the cell approximately proportional to the cell conductance, which then leads to partial conductivity values consistent with the electron-blocking case. Chemical capacitance was found to be closer to the true material property in the electron-blocking cell while excessively high chemical capacitance without expected silver activity dependence resulted in the electron-blocking cell. A chemical storage effect at internal boundaries is suggested to explain the anomalies in the respective blocking configurations.

• 한국진공학회지
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• 제8권3B호
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• pp.353-360
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• 1999

The global balance model is applied to investigate the transient behavior of the electron density and temperature in helicon plasmas. The power absorption calculated from the solutions of the Maxwell equations is used in solving the power balance equation. A balance model for the neutral gas is also considered to fins its density self-consistently. It is turned out that the numerical results reasonably explain consequences of the ion pumping effect including the occurrence of two distinct modes of pulsed helicon discharge which have been observed experimentally. The behavior of the discharge parameters are fond to be primarily dependent on the power absorption and the gas flow rate, but the pressure controls the electron density and temperature of the final steady state as well as the transient state even with the same flow rate. Finally, it is shown that the electron density virtually the linear relationship between the density and the magnetic field is retained for a higher pressure when the effect of the ion pumping is negligible.

• Journal of Magnetics
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• 제17권4호
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• pp.255-260
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• 2012

In this study, we determine that the electron paramagnetic resonance line-width (EPRLW) is axially symmetric about the c-axis and analyze the spin Hamiltonian with an isotopic g-factor of 1.9920 at a frequency of 9.5 GHz. It should be noted that the electron paramagnetic resonance signals are Lorentzian. Our findings show that the EPRLW decreases exponentially with an increase in the temperature; i.e., its temperature dependence in the range 300-400 K obeys Arrhenius behavior, this kind of temperature dependence indicates an off-center a motional narrowing of the spectrum when $Mn^{2+}$ impurity ions substitute for $Nb^{5+}$ ions. The specific heats follow a linear dependence suggesting a simple Debye $T^3$ behavior.

• 한국초전도ㆍ저온공학회논문지
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• 제15권1호
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• pp.6-10
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• 2013

We investigate the electrical and thermal transport properties of a sesquicarbide superconductor $La_2C_3$, including electrical resistivity, thermoelectric power, and thermal conductivity. The electrical resistivity exhibits a typical metallic character with a saturation behavior at high temperatures. The thermoelectric power shows a metallic behavior with pronounced phonon-drag effect, comparable with pure metals. The broad peak of the thermal conductivity is observed in the superconducting state, which is rapidly suppressed by magnetic fields. These observations suggest that the electron-phonon scattering is significant in $La_2C_3$, which is relevant with the relatively high-$T_c$ in $La_2C_3$ through strong electron-phonon coupling with low frequency phonon modes.

• 대한치과보철학회지
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• 제38권1호
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• pp.85-97
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• 2000

The purpose of this study was to compare the corrosion characteristics between implant fixture and two types of abutment screw ; gold screw, titanium screw. The anodic polarization behavior, the galvanic corrosion behavior, and the crevice corrosion behavior of prepared samples were investigated using potentiostat and scanning electron microscope. The results were as follows: 1. Anodic polarization behavior of samples; The primary passivation potential of implant fixture was -420mV, implant abutment was -560mV. titanium screw was -370mV and gold screw was -230mV. All samples were shown to have a high corrosion potential and good formation of passive film. The critical passive current density of gold screw was higher than that of other samples and the sample of gold screw showed a unstable passive film formation at passive region. 2. Galvanic corrosion behavior of samples; Contact current density between implant fixture and titanium screw showed $8.023{\times}10^{-5}C/cm^2$. Contact current density between implant fixture and gold screw showed $5.142{\times}10^{-5}C/cm^2$. 3. Crevice corrosion behavior of samples; The crevice corrosion resistance of sample using titanium screw was higher than that of sample using gold screw, and a severe corrosion morphologies were observed at the fixture-screw interface by the scanning electron microscope.

• E2M - 전기 전자와 첨단 소재
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• 제10권4호
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• pp.342-348
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• 1997

In this paper, the behavior of electron swarm parameters and energy distribution function of the discharge under high E/N condition in e$^{-10}$ -CF$_{4}$ gas have been analysed over the E/N range from 1-300(Td) by the MCS and BEq methods using set of electron collision cross section determined by the authors. The swarm parameters and energy distribution function have been calculated for the pulsed Townsend, steady-state Townsend and Time of Flight methods. The results gained that the value of electron swarm parameters such as the electron drift velocity, the electron ionization and attachment coefficients and longitudinal diffusion coefficients in agreement with the experimental and theoretical data for a range of E/N. The electron energy distribution function has been explained and analysed in e$^{-10}$ -CF$_{4}$ at E/N : 5, 10, 100, 200, 300(Td) for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The validity of the results has been confirmed by TOF and SST methods.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.461-464
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• 2008

We have developed low voltage driving red phosphorescent organic light-emitting devices using a new electron transport layer. $Ir(piq)_3$ and CBP were used as a phosphorescent dopant and an emission host, respectively. The device exhibits a luminance of $1000\;cd/m^2$ at a voltage of 2.8 V. This high luminance at low voltage results from a high electron conduction behavior of the new electron transport layer.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 추계학술발표회
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• pp.328-329
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• 2005