• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.976-979
• /
• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.1
• /
• pp.30-37
• /
• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.4
• /
• pp.147-152
• /
• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• Radiation Oncology Journal
• /
• v.16 no.3
• /
• pp.337-345
• /
• 1998

Purpose : To obtain the uniform dose at limited depth to entire surface of the body, the dose characteristics of degraded electron beam of the large target-skin distance and the dose distribution of the six-dual electron fields were investigated Materials and Method : The experimental dose distributions included the depth dose curve, spatial dose and attenuated electron beam were determined with 300 cm of target-skin distance (TSD) and full collimator size (35*35 $cm^2$ on TSD 100 cm) in 4 MeV electron beam energy. Actual collimated field size of 105 cm * 105 cm at the distance of 300 cm could include entire hemibody. A patient was standing on step board with hands up and holding the pole to stabilize his/her positions for the six-dual fields technique. As a scatter-degrader, 0.5 cm of acrylic plate was inserted at 20 cm from the body surface on the electron beam path to induce ray scattering and to increase the skin dose. Results : The full width at half maximum(FWHM) of dose profile was 130 cm in large field of 105*105 $cm^2$ The width of $100\pm10\%$ of the resultant dose from two adjacent fields which were separated at 25 cm from field edge for obtaining the dose unifomity was extended to 186 cm. The depth of maximum dose lies at 5 mm and the 80$\%$ depth dose lies between 7 and 8 mm for the degraded electron beam by using the 0.5 cm thickness of acrylic absorber. Total skin electron beam irradiation (TSEBI) was carried out using the six dual fields has been developed at Stanford University. The dose distribution in TSEBI showed relatively uniform around the flat region of skin except the protruding and deeply curvatured portion of the body, which showed excess of dose at the former and less dose at the latter. Conclusion : The percent depth dose, profile curves and superimposed dose distribution were investigated using the degraded electron beam through the beam absorber. The dose distribution obtained by experiments of TSEBI showed within$\pm10\%$ difference except the protruding area of skin which needs a shield and deeply curvatured region of skin which needs boosting dose.

• Progress in Medical Physics
• /
• v.14 no.1
• /
• pp.1-7
• /
• 2003

In this work we developed a EGS4 control code to calculate the dose distributions for high energy electron beams in water phantom applied longitudinal magnetic field. We reviewed the electron's motion in magnetic field and delivered equations for direction changs of the electron by the external magnetic field. The mathematical results are inserted into the EGS4 code system to account for the presence of external magnetic fields in phantom. The electron pencil beam paths of 6 MeV in water phantom are calculated for magnetic fields of 1-3 T and the dose distributions for a field of 1.0 cm in diameter are calculated for magnetic fields of 0.6-1 T using the code. From the results of path calculations we found that the lateral ranges of the electrons are reduced in the magnetic field of 3 T. For a field of 1 cm diameter and a magnetic field of 1 T, the small dose enhancement near the range of the electrons on the depth dose and the penumbra reduction of 0.15 cm on the beam profile are observed. We discussed and evaluated the results from the theoretical concepts.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.12
• /
• pp.137-144
• /
• 2001

The major movement blocks of the container are the range between the apron and the designation points on yard in container terminals. The yard tractor drived by operator takes charge of it's movement in conventional container terminals. In automated container terminal, AGV(automatic guided vehicle) takes charge of a yard tractor's role and information of navigation path are ordered from upper control system. The automated container terminal facilities must have the docking system that guides landing zinc to execute high speed travelling and precision positioning. This paper describes the new docking method with the rotating LSB(laser slit beam) generator and two pair of photo receiver. The LSB generator is installed on the fixed ground and the photo receiver is implemented on the moving vehicle such as AGV. The proposed docking system is implemented to confirm it's function and accuracy. The accuracy of measured moving position is represented in ±5mm at 1 data sampling.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.1
• /
• pp.25-29
• /
• 2021

The fabrication of nanopore membrane by deposition of Al2O3 film using electron-beam evaporation, which is fast, cost-effective, and negligible dependency on substance material, is investigated for potential applications in water purification and sensors. The decreased nanopore diameter owing to increased wall thickness is observed when Al2O3 film is deposited on anodic aluminum oxide membrane at higher deposition rate, although the evaporation process is generally known to induce a directional film deposition leading to the negligible change of pore diameter and wall thickness. This behavior can be attributed to the collision of evaporated Al2O3 particles by the decreased mean free path at higher deposition rate condition, resulting in the accumulation of Al2O3 materials on both the surface and the edge of the wall. The reduction of nanopore diameter by Al2O3 film deposition can be applied to the nanopore membrane fabrication with sub-100 nm pore diameter.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.273.2-273.2
• /
• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Journal of Radiation Protection and Research
• /
• v.38 no.1
• /
• pp.22-28
• /
• 2013

The skyshine effect is an essential and important phenomenon in the shielding design of the high energy accelerator. In this study, a new estimation method of neutron skyshine was proposed and was verified by comparison with existing methods. The effective dose of secondary neutrons and photons at the locations that was far away from high-energy electron accelerator was calculated using FLUKA and PHITS Monte Carlo code. The transport paths of secondary radiations to reach a long distance were classified as skyshine, direct, groundshine and multiple-shine. The contribution of each classified component to the total effective dose was evaluated. The neutrons produced from the thick copper target irradiated by 10 GeV electron beam was applied as a source term of this transport. In order to evaluate a groundshine effect, the composition of soil on the PAL-XFEL site was considered. At a relatively short distance less than 50 m from the accelerator tunnel, the direct and groundshine components mostly contributed to the total effective dose. The skyshine component was important at a long distance. The evaluated dose of neutron skyshine agreed better with the results using Rindi's formula, which was based on the experimental results at high energy electron accelerator. That also agreed with the estimated dose using the simple evaluation code, SHINE3, within about 20%. The total effective dose, including all components, was 10 times larger than the estimated doses using other methods for this comparison. The influence of multiple-shine path in this evaluation of the estimation method was investigated to be bigger than one of pure skyshine path.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.2
• /
• pp.122-130
• /
• 1996

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.