• 제목/요약/키워드: Electron beam lithography

검색결과 168건 처리시간 0.032초

밀리미터파용 HEMT 소자 개발 및 제작을 위한 T-게이트 형성 전자빔 리소그래피 공정 모의 실험기 개발 (Development of Electron-Beam Lithography Process Simulation Tool of the T-shaped Gate Formation for the Manufacturing and Development of the Millimeter-wave HEMT Devices)

  • 손명식;김성찬;신동훈;이진구;황호정
    • 대한전자공학회논문지SD
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    • 제41권5호
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    • pp.23-36
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    • 2004
  • 밀리미터파 대역용 고속 HEMT 소자 제작 및 개발을 위하여 0.l㎛ 이하의 T-게이트 길이를 형성하기 위한 전자빔 리소그래피 공정을 분석할 수 있는 새로운 몬테 카를로 시뮬레이터를 개발하였다. 전자빔에 의한 노광 공정 모델링을 위해 전자산란에 대한 몬데 카를로 시뮬레이션에서 다층 리지스트 및 다원자 타겟 기판 구조에서 리지스트에 전이되는 에너지를 효율적으로 계산하도록 내부 쉘 전자 산란과 에너지 손실에 대해 새로이 모델링하였다. 다층 리지스트 구조에서 T-게이트 형상을 얻기 위해서 보통은 재현성 문제로 각 리지스트에 대해 각기 다른 현상액을 사용하게 되는데, 3층 리지스트 구조에서의 전자빔 리소그래피 공정을 정확하게 시뮬레이션하기 위해 각기 다른 현상 모델을 적용하였다. 본 논문에서 제안 개발된 모델을 사용하여 HEMT 소자의 전자빔 리소그래피에 의한 0.l㎛ T-게이트 형성 공정을 시뮬레이션하고 SEM 측정 결과와 비교하여 T-게이트 형성 공정을 분석하였다.

전자빔건 헤드유니트의 설계와 제작 (Establishment of Gun Head Unit for Electron Beam Machining System)

  • 강재훈;이찬홍;최종호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.1875-1878
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    • 2005
  • It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with electron beam gun head unit is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included ceramic isolation plate and main body which are essentially constructed for electron beam gun head unit are designed and manufactured. And this electron beam gun head unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

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전자빔 리소그래피를 이용한 주사기법에 따른 패턴형상 조정 (Pattern Shape Modulation by Scanning Methods in E-Beam Lithography)

  • 오세규;김승재;김동환;박근;장동영
    • 한국생산제조학회지
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    • 제18권6호
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    • pp.558-564
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    • 2009
  • To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

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20 nm급 T-형 게이트 제작을 위한 2단 전자 빔 노광 공정 (Two-step electron beam lithography to fabricate 20 nm T-gate)

  • 이강승;김영수;이경택;홍윤기;정윤하
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.555-556
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    • 2006
  • In this paper, we have proposed a novel process using two-step electron beam lithography to fabricate 20 nm T-gates for high performance MODFETs. Two-step lithography reduces electron forward scattering by defining the foot on a thin (100 nm) bottom-layer of polymethyl methacrylate (PMMA) at the second step, the T-gate head having been developed at the first step. Adopting a low temperature development technique for the second step reduces the detrimental effect of head exposure on foot definition. We have shown that 20 nm T-gate can be patterned with this process.

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Control of Nanospacing in TiO2 Nanowire Array Using Electron Beam Lithography

  • Yun, Young-Shik;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.430.1-430.1
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    • 2014
  • According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

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Single-step 전자빔 묘화 장치를 이용한 Focusing Grating Coupler 제작 연구 (Fabrication technology of the focusing grating coupler using single-step electron beam lithography)

  • 김태엽;김약연;손영준;한기평;백문철;김해성;신동훈;이진구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.976-979
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    • 2002
  • A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

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Fabrication Technology of the Focusing Grating Coupler using Single-step Electron Beam Lithography

  • Kim, Tae-Youb;Kim, Yark-Yeon;Han, Gee-Pyeong;Paek, Mun-Cheol;Kim, Hae-Sung;Lim, Byeong-Ok;Kim, Sung-Chan;Shin, Dong-Hoon;Rhee, Jin-Koo
    • Transactions on Electrical and Electronic Materials
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    • 제3권1호
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    • pp.30-37
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    • 2002
  • A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.