• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2197-2202
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• 2014

In this paper, we report on an investigation of highly sensitive sensing performance of a hydrogen sensor composed of palladium (Pd) nanowires. The Pd nanowires have been grown by electrodeposition into nanochannels and liberated from the anodic aluminum oxide (AAO) template by dissolving in an aqueous solution of NaOH. A combination of photo-lithography, electron beam lithography and a lift-off process has been utilized to fabricate the sensor using the Pd nanowire. The hydrogen concentrations for 2% and 0.1% were obtained from the sensitivities (${\Delta}R/R$) for 1.92% and 0.18%, respectively. The resistance of the Pd nanowires depends on absorption and desorption of hydrogen. Therefore, we expect that the Pd nanowires can be applicable for detecting highly sensitive hydrogen gas at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1087-1091
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• 2005

Four-probe device of single ZnO nanowire was fabricated by electron beam lithography. Electrical characterizations in a two-probe and a four-probe configuration with a back-gate were carried out to clarify the relative contribution of the contact and the intrinsic part in a ZnO nanowire. I-V characteristic in four-probe measurement showed an ohmic behavior with a high conductivity, 100 S/cm, which was better than those of two-probe measurement by 10 times. At the same values of the current between two-probe and four-probe, the net voltage applied inside the nanowire were extracted with calculated voltages at the contact. Four-probe current-gate voltage characteristics showed bigger tendencies than those of two-probe measurement at low temperatures, indicating the reduced gate dependence in two-Probe measurements by the existence of the contact resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.151-154
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• 2004

화합물 반도체 단일 나노선의 에칭 효과를 보기 위하여 에칭 용액과 시간을 달리하면서 전류-전압 특성을 측정하였다. 측정을 위한 단일 나노선 소자는 Electron beam lithography를 이용하여 전극을 top contact 방식으로 만들었다. 에칭은 식각과정에서 현상된 상태의 패턴에서 수행하며 금속 전극과 나노선 접합 부분만을 에칭 하였다. 에칭용액은 Buffered Oxide Etchant(BOE)을 이용하였으며 에칭 시간은 수 십초에서 수 십분까지 다양하게 하였다. 전압-전류 특성 측정결과에서 에칭 용액과 에칭 시간에 따라 전류가 증가하는 것을 확인 할 수 있었다. 이러한 효과는 나노선 외곽에 비정질 산화층의 제거 효과로 인한 것으로 설명할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.4
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• pp.392-397
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• 2014

Recently, there is an increase in the need for precision linear stages with vacuum compatibility in such areas as lithography equipment for wafer or mask manufacturing, mask mastering equipment for optical data storage and electron beam equipment. A simple design, high stiffness and low cost can be achieved by using ball bearings. However, a ball bearing have friction and wear problems just as in ambient air. In order to decrease the friction, a special finish, a diamond-like carbon (DLC) film coating, is applied to the surface of a guide rail by sputtering deposition. This paper presents the result of an experimental investigation on the control performance of a ball bearing-guided linear motion stage under two environmental conditions: in air and vacuum. A comparison between the results with and without the DLC coating was also considered in the experimental investigation.

• Progress in Superconductivity
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• v.11 no.2
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• pp.96-99
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• 2010

We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.101-105
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• 2006

Nanoscale floating-gate characteristic of colloidal Au nanoparticles electrostatically assembled on the oxidized surface of Si nanowires have been investigated. The Si nanowire split-gate transistor structure was fabricated by electron beam lithography and subsequent reactive ion etching. Colloidal Au nanoparticles with ${\sim}5$ nm diameters were selectively deposited onto the Si nanowire surface by 2 min electrophoresis. It was found that electric fields applied to the self-aligned split side gates allowed charge to be transferred on the Au nanoparticles. It was observed that the depletion mode cutoff voltage, induced by the self-aligned side gates, was shifted by more than 1 V after Au nanoparticle electrophoresis. This may be due to the semi-one dimensional nature of the narrow Si nanowire transport channel, having much enhanced sensitivity to charges on the surface.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.6
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• pp.459-464
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• 2008

We present a novel microcantilever device with nano-interdigitated electrodes (nano-IDEs) and DNA selective immobilization on the nano-IDEs for biosensing applications. Using the nano-IDEs and cyclic voltammetric methods, we have achieved selective immobilization of DNA with submicrometer spatial resolution on a freestanding microcantilever. $70{\sim}500\;nm$-wide gold (Au) nano-IDEs are fabricated on a low-stress SiNx microcantilever with dimensions of $100{\sim}600\;{\mu}m$ in length, and $15{\sim}60\;{\mu}m$ in width, with a $0.5\;{\mu}m$ thickness using electron beam lithography and bulk micromachining. Streptavidin is selectively deposited on one side of the nano-IDEs using cyclic voltammetry at a scan rate of 0.1 V/s with a range of $-0.2{\sim}0.7\;V$ during $1{\sim}5$ cycles. The selective deposition of dsDNA is confirmed by fluorescence microscopy after labeling with YOYO-1 dye.