• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.260-264
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• 1996

In this study, the dieiectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability . As a result. first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature, and the breakdown strength of specimens because it is believed that the adding filler farms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since the suggests that silane coupling agent improves interfacial combination and relays electric field concentration. Finally, from the analysis 7f weibull distribution. it was confirmed that as the allowed breakdown probability was given by 0.11[%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.159-163
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• 2003

In this study, the DC dielectric breakdown of epoxy composites used for PCB material was experimented and then its data were simulated by Weibull distribution equation. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. From the analysis of Weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5[kV/mm].

• Composites Research
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• v.32 no.6
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• pp.301-306
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• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.43-46
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• 2001

The DC dielectric breakdown of epoxy composites used for transformer was experimented and then its data were simulated by Weibull distribution equation in this study. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it was believed that the adding filler formed interface, charges were accumulated in it, the molecular mobility was raised, the electric field was concentrated, electrons were accelerated and then electron avalanche was early accomplished. From the analysis of Wei bull distribution equation, it was confirmed that as the allowed breakdown probability was· given by 0.1[%], the value of 'applied field was needed to be under 17.20[kV/mm].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.184-189
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• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• Proceedings of the Korean Society of Computer Information Conference
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• 2012.01a
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• pp.233-236
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• 2012

본 연구에서는 변성기용으로 사용되는 에폭시 복합체에 대해 절연 파괴 실험을 하고 그 데이터를 와이블 분포 확률을 이용해서 시뮬레이션을 하였다. 에스테르기의 기여에 의한 가교밀도 때문에 저온에서 경화제가 증가할수록 파괴강도가 증가하고 충진제를 첨가한 시료들의 파괴강도는 비충진 시료들의 경우 보다 더 낮았는데 이는 충진제 첨가가 계면을 형성하고 전하가 축적되어 분자의 이동도가 증가되고, 전계가 집중되어 전자 가속화 및 전자 사태의 성장이 초기에 도달되기 때문으로 사료된다. 또한 와이블 분포의 분석으로부터 허용 절연파괴 확률이 0.1[%]로 주어질 때, 인가 전계값은 21.5[kV/mm] 이하가 되어야 함을 확인하였다.

• 전기의세계
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• v.19 no.6
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• pp.18-25
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• 1970

The object of this project is to manifest the mechanism of deterioration phenomena for dielectrics causing corona discharge and applies it for determine the standard corona detection technique. As the results, we observed that corona discharges may occur more strongly around cylindrical shape electrode in air than hemisphere shape electrode in vacuum, so that it depends on effects such as shape of the electrode, moisture, surface coditions, etc. According to observed the deterioration of dielectrics takes place in following stages. At first the attacked surface by an electron avalanche is uniformly eroded; then pits are formed; after that sharp channels are formed which lead to break-down as a treeing. The test are accelerated with higher frequencies by the cylindrical bar shape electrode in the pulse stright detection method more sensitive than Lissajous patterns. Lissajous patterns detection method is simple but usually insensitive and has disadvantage that the magnitude of the individual discharge is not measured.

• Proceedings of the Korean Society of Computer Information Conference
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• 2012.01a
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• pp.41-43
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• 2012

Today many people are greatly interested in the environment. Especially increasing affluent of food causes a great amount of food waste. To handle this effectively, we now have a lot of problems of disposing garbage all over the world. In Korea, in order to reduce this garbage, we should use a standard plastic garbage bag in which we have to throw away our garbage. So it has an effect on significantly reducing the waste amount every year. Now, there are a lot of cases that residents again use a standard plastic garbage bag. The purpose of this study is to propose algorithm preventing the re-cycling of a standard plastic garbage bag.