• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.5
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• pp.473-478
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• 2016

In this paper, the MIS(: Metal-Insulator-Semiconductor) Capacitor with the nitrided-oxide by RTP are fabricated to investigate the carrier trap parameters due to avalanche electron injection. Two times turn-around phenomenon of the flatband voltage shift generated by the avalanche injection are observed. This shows that electron trapping occurs in the oxide film at the first stage. As the electron injection increases, the first turn-around occures due to a positive charge in the oxide layer. After further injection, the curves turns around once again by electron captured. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitting with experimental data in order to determine trap parameter of nitrided-oxide.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1662-1664
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• 2003

An electron gun system for a nanosecond pulse linac has been built and tested. The gun grid is driven with a grid pulser, which consists of an avalanche transistor pulser and parallel triode amplifier. The amplifier is installed in an end hole of the electron gun and provided for power amplification and polarity change of the output pulses of the avalanche transistor pulser. An output pulse of 200 V and 2 ns FWHM was obtained by using the grid pulser of can type transistors. Measurements with a test bench show that the electron gun can deliver 2ns pulse with with currents larger than 3A.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.69-75
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• 2005

Gas avalanche microdetectors, such as micro-strip gas chamber (MSGC), micro-gap chamber (MGC), micro-dot chamber (MDOT), etc., are operated under high voltage to induce large electron avalanche signal around micro-size anodes. Therefore, the anodes are highly exposed to electrical damage, for example, sparking because of the interaction between high electric field strength and charge multiplication around the anodes. Gas electron multiplier (GEM) is a charge preamplifying device in which charge multiplication can be confined, so that it makes that the charge multiplication region can be separate from the readout micro-anodes in 9as avalanche microdetectors possible. Primary electron collection efficiency is an important measure for the GEM performance. We have defined that the primary electron collection efficiency is the fractional number of electron trajectories reaching to the collection plane from the drift plane through the GEM holes. The electron trajectories were estimated based on 3-dimensional (3D) finite element method (FEM). In this paper, we present the primary electron collection efficiency with respect to various GEM operation parameters. This simulation work will be very useful for the better design of the GEM.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.3
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• pp.106-111
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• 1984

Prebreakdown current pulses arising from avalanche growth in SF6 were recorded under static uniform field at pressures up to about 400kpa. At pressures less than 100kpa the current pulses consist of the electron component observed as the fast rise of current, the negative ioncomponent which is superimposed, and the positive ion component comprising the tail of the pulse. The values of positive ion drift velocity were measured from the present pulse data. At pressures in excess of about 100 Kpa the pulse shapes becam distorted such that quantitative analysis was no longer possible, and did not indicate the action of any photosecondary process at the cathode. Breakdown appers to result from the seperate development of single avalanche.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1213-1218
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• 2004

The present article reports extensive numerical results on the non-local characteristics of ultra-short pulsed laser-induced breakdowns of fused silica ($SiO_{2}$) by using the multivariate Fokker-Planck equation. The nonlocal type of multivariate Fokker-Planck equation is modeled on the basis of the Boltzmann transport formalism to describe the ultra-short pulsed laser-induced damage phenomena in the energy-position space, together with avalanche ionization, three-body recombination, and multiphoton ionization. Effects of electron avalanche, recombination, and multiphoton ionization on the electronic transport are examined. From the results, it is observed that the recombination becomes prominent and contributes to reduce substantially the rate of increase in electron number density when the electron density exceeds a certain threshold. With very intense laser irradiation, a strong absorption of laser energy takes place and an initially transparent solid is converted to a metallic state, well known as laser-induced breakdown. It is also found that full ionization is provided at intensities above threshold, all further laser energy is deposited within a thin skin depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.408-408
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• 2001

• Fire Science and Engineering
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• v.33 no.2
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• pp.30-38
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• 2019

Tracking, which is one of the main causes of electrical fires, is perceived as a physical phenomenon of electrical discharge. Hence tracking should be explained based on electric field analysis, conduction path by electron generation, and gas discharge physics. However, few papers have considered these details. This paper proposes a tracking mechanism including their effects on tracking progress. In order to prove this mechanism, a tracking experiment, an electric field analysis for the carbonization evolution model, and an explanation of the tracking process by gas discharge physics were conducted. From the tracking experiment, the current waveforms were measured at each stage of the tracking progress from corona discharge to tracking breakdown. The electric field analysis was carried out in order to determine the electric field on the surface of a dry-band and the high electric field region for electron generation during the generation and progress of carbonization. In this paper, the proposed tracking mechanism consisted of six stages including electron avalanche by corona discharge, accumulation of positive ions, expansion of electron avalanche, secondary electron emission avalanche, streamer, and tracking by conductive path. The pulse current waveforms measured in the tracking experiment can be explained by the proposed tracking mechanism. The results of this study will be used as the technical data to detect tracking phenomenon, which is the cause of electric fire, and to improve the proof tracking index.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.