• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2003년도 제27회 추계학술대회
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• pp.82-82
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• 2003

Introduction: With the development of dose calculation algorithms for electron beams, 3D RTP systerns are available for electron beam dose distribution commercially. However, no studies evaluated the accuracy of dose calculation with ADAC Pinnacle system for electron beams. So, the accuracy of the ADAC system is investigated by comparing electron dose distributions from ADAC system against the BEAMnrc/DOSXYZnrc. Methods: A total of 33 breast cancer patients treated with 6, 9, and 12MeV electrons in our institution was selected for this study. The first part of this study is to compare the dose distributions of measurement, TPS and the BEAMnrc/DOSXYZnrc code in flat water phantom at gantry zero position and for a 10 ${\times}$ 10 $\textrm{cm}^2$ field. The second part is to evaluate the monitor unit obtained from measurement and TPS. Adding actual breast patient's irregular blocks to the first part, monitor units to deliver 100 cGy to the dose maximum (dmax) were calculated from measurement and 3D RTP system. In addition, the dose distributions using blocks were compared between TPS and the BEAMnrc/DOSXYZnrc code. Finally, the effects of tissue inhomogeneities were studied by comparing dose distributions from Pinnacle and Monte Carlo method on CT data sets. Results: The dose distributions calculated using water phantom by the TPS and the BEAMnrc/ DOSXYZnrc code agreed well with measured data within 2% of the maximum dose. The maximum differences of monitor unit between measured and Pinnacle TPS in flat water phantom at gantry zero position were 4% for 6 MeV and 2% for 9 and 12 MeV electrons. In real-patient cases, comparison of depth doses and lateral dose profiles calculated by the Pinnacle TPS, with BEAMnrc/DOSXYZnrc code has generally shown good agreement with relative difference less than +/-3%. Discussion: For comparisons of real-patient cases, the maximum differences between the TPS and BEAMnrc/DOSXYZnrc on CT data were 10%. These discrepancies were due in part to the inaccurate dose calculation of the TPS, so that it needs to be improved properly. Conclusions: On the basis of the results presented in this study, we can conclude that the ADAC Pinnacle system for electron beams is capable of giving results absolutely comparable to those of a Monte Carlo calculation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1385-1387
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• 1995

The Monte Carlo method for studying the steady-state behavior of electrons under the influence of a electric field is described. In this simulation used a Free Flight Time technique based on determination of the increase in kinetic energy between two collisions. The electron behavior in the cathode region of a corona discharge has been analysed using this method; spatial variations of the energy and excitation, ionization, and the multiplication of electrons were discussed.

• 한국의학물리학회지:의학물리
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• 제8권1호
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• pp.47-52
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• 1997

양성자나 알파입자와 같은 무거운 하전입자가 매질 속을 진행하는 경우에 매질과 상호작용 하여 일어날 수 있는 물리적인 현상을 알아보기 위하여 몬테칼로 기법을 이용하여 시뮬레이션 하였다. 양성자선의 Bragg peak가 에너지의 증가에 따라 물 속에서 깊어짐을 확인하였다. 이러한 Bragg peak 현상을 방사선치료에 이용할 경우에 표적 조직의 흡수선량이 광자와 전자선에 비하여 국소화 되고 주변조직의 보호효과가 탁월함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.194-198
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• 2002

Energy Distribution Function in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-tenn approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1000-1004
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• 1997

In this paper the current-voltage characteristics of a submicron GaAs MESFET is simulated by using the self-consistent ensemble Monte Carlo method. The numerical algorithm employed in solving the two-dimensional Poisson equation is the successive over-relaxation(SOR) method. The total number of employed superparticles is about 1000 and the field adjusting time is 10fs. To obtain the steady-state results the simulation is performed for 10ps at each bias condition. The simulation results show the average electron velocity is modified by the gate voltage.

• 전자공학회논문지A
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• 제30A권4호
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• pp.40-50
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• 1993

In this paper, MODFET devices with various gate length are simulated using the Monte-Carlo method. The number of superparticle is 5000 and the Poisson equation is solved to obtain field distribution. The structure of MODFET is n-AlGaAs/i-AlGaAs/iGaAs and doping concentration of n-AlGaAs layer is 1${\times}10^{17}/cm^{3}$ and the thickness is 500.angs., and the thickness of i-AlGaAs is 50$\AA$. The devices with gate length 0.2$\mu$m, 0.5$\mu$m, 1.0$\mu$m respctively are simulated and the current-voltage curves and transport characteristics of that devices are obtained. Occupancy of each subband and electron energy distribution and conduction energy band in channel have been analyzed to obtain transport characteristics, and particles transposed from source to drain have been analyzed to current-voltage curves. Current level is highest for the device of Lg=0.2$\mu$m and transconductance of this device is 310mS/mm.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.656-659
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• 2001

최근 반도체 기술의 발달로 소자의 크기가 줄어들면서 높은 에너지를 갖는 핫 캐리어 전송 해석이 매우 중요하게 되었다. Auger 과정과는 반대인 임팩트이온화현상은 핫 캐리어에 의한 산란에 의하여 전자-정공쌍을 생성하는 과정으로 소자의 전송특성 해석을 위한 시뮬레이션에 정확한 임팩트 이온화모델이 필수적이다. 본 연구에서는 Monte Carlo 시뮬레이터를 이용한 임팩트이온화 모델과 TCAD 그리고 Micro-Tec을 이용한 임팩트이온화 모델을 분석하여 보다 정확한 임팩트이온화 모델을 제시하고자 한다.

• ETRI Journal
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• 제44권3호
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• 한국정보통신학회논문지
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• 제3권4호
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• pp.915-922
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• 1999

본 논문에서는 GaAs 풀밴드 E-k관계를 이용하여 전계방향에 따라 임팩트이온화가 전자전송에 미치는 영향을 분석하였다. E-k관계를 구하기 위하여 페르미황금법칙과 local form factor를 이용하는 의사포텐셜방법을 사용하였으며 임팩트이온화율을 구하기 위하여 브릴로우인영역을 사면체로 분할하여 각 사면체마다 적분하는 사면체방법을 이용하였다. 임팩트이온화의 이방성분석을 위하여 Monte Carlo시뮬레이션을 수행하였다. 특히 임팩트이온화의 과도상태분석을 수행한 결과, 이방성은 과도상태에서만 발생하는 것으로 나타났으며 정상상태에서는 등방성 특성을 보이는 것으로 나타났다. 본 연구에서 제시한 GaAs 임팩트이온화의 이방성특성은 GaAs 소자의 과도응답특성분석에 사용될 수 있으리라 사료된다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년 영문 학술대회
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• pp.557-560
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• 2008

A two-dimensional particle-in-cell(PIC) simulation with a Monte-Carlo Collision(MCC) has been developed to investigate the discharge characteristics of the acceleration channel of a HET. The dynamics of electrons and ions are treated with PIC method at the time scale of electrons in order to investigate the particle transport. The densities of charged particles are coupled with Poisson's equation. Xenon neutrals are injected from the anode and experience elastic, excitation, and ionization collisions with electrons, and are scattered by ions. These collisions are simulated by using an MCC model. The effects of control parameters such as magnetic field profile, electron current density, and the applied voltage have been investigated. The secondary electron emission on the dielectric surface is also considered.