• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 1997년도 추계학술대회 발표논문집:21세기를 향한 정보통신 기술의 전망
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.945-951
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• 1997

Inorder to investigated electrical conduction characteristics of silicone oils due to viscosity variation we studied the electrical conduction properties at temperature range of 10~110[$^{\circ}C$] and electrical field from 1 to 1.33$\times$10$^4$[V/cm] The viscosity of used specimens was low viscous(1, 2, 5[cSt]) silicone oils. It was shown the ohmic conduction characteristics in low temperature and low field by Ion dipole and humidity included specimen. And we known the conduction mechanism due to electron injection by Schottky's effect in the high temperature an d high field region.

• Journal of Magnetics
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• 제13권4호
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• pp.132-135
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• 2008

The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

• 한국정보통신학회논문지
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• 제16권4호
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• pp.805-811
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• 2012

본 연구에서는 이중게이트(Double Gate; DG) MOSFET에서 채널 내 전자분포에 대한 전도중심의 이동을 분석하고자 한다. 이를 위하여 기존에 발표되어 타당성이 입증된 포아송방정식의 해석학적 전위분포 모델을 이용할 것이다. 이중게이트 MOSFET의 경우 두개의 게이트전압에 의한 전류제어능력의 증가로 단채널 효과를 감소시킬 수 있다는 장점이 있다. 단채널효과는 주로 문턱전압영역을 포함한 문턱전압이하 영역에서 발생하므로 문턱전압이하 영역에서의 전송특성을 분석하는 것은 매우 중요하다. 또한 전송특성은 채널 내 전자의 분포 및 전도 중심의 변화 등에 영향을 받는다. 그러므로 본 연구에서는 채널 내 전자분포의 변화가 전도중심에 미치는 영향을 채널도핑농도, 도핑분포함수 그리고 채널의 크기 등에 따라 분석할 것이다.

• 한국정보통신학회논문지
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• 제19권1호
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• pp.156-162
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 산화막두께, 채널도핑농도 그리고 상하단 게이트 전압 등과 같은 소자 파라미터에 따른 전도중심 및 전자농도가 문턱전압이하 스윙에 미치는 영향을 분석하고자 한다. 비대칭 이중게이트 MOSFET는 대칭구조와 비교하면 상하단 게이트 산화막의 두께 및 게이트 전압을 각각 달리 설정할 수 있으므로 단채널효과를 제어할 수 있는 요소가 증가하는 장점을 가지고 있다. 그러므로 상하단 산화막두께 및 게이트 전압에 따른 전도중심 및 전자분포의 변화를 분석하여 심각한 단채널효과인 문턱전압이하 스윙 값의 저하 현상을 감소시킬 수 있는 최적의 조건을 구하고자 한다. 문턱전압이하 스윙의 해석학적 모델을 유도하기 위하여 포아송방정식을 이용하여 전위분포의 해석학적 모델을 구하였다. 결과적으로 소자 파라미터에 따라 전도중심 및 전자농도가 크게 변화하였으며 문턱전압이하 스윙은 상하단 전도중심 및 전자농도에 의하여 큰 영향을 받는 것을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• 한국진공학회지
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• 제8권4A호
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• pp.410-416
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• 1999

It is confirmed that the cause of anode current in SEDs (surface conduction electron emission displays) is the inertial force of electron emitted from the cathode surface in the calculation of electron trajectory. In the fissure of sub-micron, most of electrons emitted from the area of the cathode edge flow into the coplanar anode, while some electrons are emitted into the display surface by the current ratio of $10^{-3}$. The later electrons are forced to fly into the display surface by the centrifugal force due to the curved electric field between top side surfaces near the fissure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.139-140
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• 2000

The origin of the display current in the surface conduction electron emitter displays has been verified in the calculation of the electron trajectory. Some electrons move directly toward the display surface as an anode current which is generated due to the inertial force of electron motion along the curved electric field lines with a small curvature near the fissure area..

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1991년도 추계학술발표회논문집
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• pp.64-68
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• 1991

It happened that there was a sudden peak with the capacity of change, when I measured the capacity of change, cubical expansion and Thermally Stimulated Current on the Cross - Linked Polythylene. Crystal melting began at 375 K and changed into formaless shapeless at 380 K. The conduct of a particle on the surfase of dipole, electron trap was founded to be ion conduction nature under the low electronic field, wherase, the electron nature under the high electronic field. Consequentity, under the semi-conduction layer electronic a particle was injected to inter-fase and accumulated for a time and appeared to be TSC.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.53-54
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• 2000

Measurements of the direct current resistivity, on multiwalled carbon nanotubes(MWNT) for field electron emitter source that had been screen printed in a thick film form were made as a function of temperature T in the range of 1.7K-390K. In this measuring temperature range, the electrical resistivity for the MWNT show that the main contribution to the conductivity comes form carries that hop directly between localized states executing variable range hopping processes. This thick-film form system for large area display showed a high bright light emission as well as very low turn-on field as like an individual MWNT system at room temperature. Furthermore, the electron emission characteristics followed well typical Fowler-Nordheim conduction under the vacuum.