• Proceedings of the Korea Society for Industrial Systems Conference
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• 1997.11a
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.945-951
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• 1997

Inorder to investigated electrical conduction characteristics of silicone oils due to viscosity variation we studied the electrical conduction properties at temperature range of 10~110[$^{\circ}C$] and electrical field from 1 to 1.33$\times$10$^4$[V/cm] The viscosity of used specimens was low viscous(1, 2, 5[cSt]) silicone oils. It was shown the ohmic conduction characteristics in low temperature and low field by Ion dipole and humidity included specimen. And we known the conduction mechanism due to electron injection by Schottky's effect in the high temperature an d high field region.

• Journal of Magnetics
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• v.13 no.4
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• pp.132-135
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• 2008

The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.805-811
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• 2012

In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.410-416
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• 1999

It is confirmed that the cause of anode current in SEDs (surface conduction electron emission displays) is the inertial force of electron emitted from the cathode surface in the calculation of electron trajectory. In the fissure of sub-micron, most of electrons emitted from the area of the cathode edge flow into the coplanar anode, while some electrons are emitted into the display surface by the current ratio of $10^{-3}$. The later electrons are forced to fly into the display surface by the centrifugal force due to the curved electric field between top side surfaces near the fissure.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.139-140
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• 2000

The origin of the display current in the surface conduction electron emitter displays has been verified in the calculation of the electron trajectory. Some electrons move directly toward the display surface as an anode current which is generated due to the inertial force of electron motion along the curved electric field lines with a small curvature near the fissure area..

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1991.10a
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• pp.64-68
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• 1991

It happened that there was a sudden peak with the capacity of change, when I measured the capacity of change, cubical expansion and Thermally Stimulated Current on the Cross - Linked Polythylene. Crystal melting began at 375 K and changed into formaless shapeless at 380 K. The conduct of a particle on the surfase of dipole, electron trap was founded to be ion conduction nature under the low electronic field, wherase, the electron nature under the high electronic field. Consequentity, under the semi-conduction layer electronic a particle was injected to inter-fase and accumulated for a time and appeared to be TSC.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.53-54
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• 2000

Measurements of the direct current resistivity, on multiwalled carbon nanotubes(MWNT) for field electron emitter source that had been screen printed in a thick film form were made as a function of temperature T in the range of 1.7K-390K. In this measuring temperature range, the electrical resistivity for the MWNT show that the main contribution to the conductivity comes form carries that hop directly between localized states executing variable range hopping processes. This thick-film form system for large area display showed a high bright light emission as well as very low turn-on field as like an individual MWNT system at room temperature. Furthermore, the electron emission characteristics followed well typical Fowler-Nordheim conduction under the vacuum.