• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.279-282
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• 1999

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute A1-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of E-beam Cu and Al in The same conditions.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.53-58
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• 2013

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process (fcCuBE$^{(R)}$) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC) technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversion functionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder on pad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend from consumer demand, reliability testing will become an important issue in advanced technology area. In particular, electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit (IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structures under electrical current stressing in order to investigate the comparison between two different typed structures. EM data was collected for over 7000 hours under accelerated conditions (temperatures: $125^{\circ}C$, $135^{\circ}C$, and $150^{\circ}C$ and stress current: 300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to find morphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reaction characteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder joint of BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates that the fcCuBE$^{(R)}$ BOL Cu column bump provides a significantly better EM reliability.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.81-89
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• 2022

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×10⁵ A/cm² conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni₃Sn₄ IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni₃Sn₄ IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.11-17
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• 2010

The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.106-108
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• 1994

Electromigration(EM) tests were carried out on Al and Cu films in HV systems to study surface migration. The Al films were made on oxidized silicon wafers by thermal evaporation, in-situ annealed at 300$^{\circ}C$, patterned, and EM tested at 260$^{\circ}C$ and 4.5MA/$\textrm{cm}^2$. SEM observation with back scattered electron mode on the EM tested Al films disclosed that thinning took place under the native Al oxide. In the case of Cu films, tested using in-situ TEM, thinning was also observed at the early stage of void formation even though the thinned areas were much less than those of the Al films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.29.1-29.1
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• 2009

반도체 공정에서의 금속 배선 공정은 매우 중요한 공정 중 하나이다. 기존에 사용되던 알루미늄이 한계에 다다르면서, 대체 재료로 사용되고있는 구리는 낮은 비저항, 높은 열전도도, 우수한 electromigration(EM)저항특성 등을 바탕으로 차세대 nano-scale집적회로의 interconnect application에 적합한 금속재료로서 각광받고 있다. Electroplating을 위한 구리 seed layer CVD 공정은 타 공정에 비해 step coverage가 우수한 막을 증착할 수 있어 고집적 소자의 구현이 가능하다. 본 연구에 이용된 2가 전구체 Cu(dmamb)2는 높은 증기압과 높은 활성화 에너지를 가짐으로서 열적안정성 및 보관안정성이 우수하며, 플루오르를 함유하지 않아 친환경적이다. 구리 증착 전 기판에 plasma 처리를 하면 표면 morphology가 변함에 따라 표면 에너지가 변화하고, 이는 구리의 2차원 성장에 유리하게 작용할 것으로 여겨진다. Plasma의 조건변화에 따른 기판의 morphology 변화 및 성막된 구리의 특성 변화를 분석하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.29.2-29.2
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• 2009

구리는 낮은 비저항, 높은 열전도도, 우수한 electromigration(EM)저항특성 등을 바탕으로 차세대 nano-scale집적회로의 interconnect application에 적합한 금속재료로서 각광받고 있다. copper interconnect는 damascene process 를주로 이용하는데 CVD를 이용하면 step coverage가우수한 seed layer얻을 수 있어 고집적 소자의 구현이 가능하다. 최근에 비 균등화 반응(disproportionationreaction)을 이용하여 고 순도 구리박막을 제조하기위해 $\beta$-diketonate Cu(I) Lewis-base의 전구체를 많이 이용하는데 그중에서 hexafluoroacetylacetonate(hfac)Cu(I)vinyltrimethylsilane (VTMS)가 널리 이용되고 있다. 그러나 (hfac)Cu(I)(VTMS) 또는 유사계열의 전구체들은 열적안정성및 보관안정성이 부족하여 실제 양산공정에 적합하지 못한 단점이 있었다. 본 연구에 이용된 2가 전구체Cu(dmamb)2는 높은 증기압($70^{\circ}C$, 0.9torr)을 가지며 종래에 주로 이용하던 1가 전구체 (hfac)Cu(VTMS)에 비해 높은 활성화 에너지(~113 kJ/mol)를가짐으로서 열적안정성 및 보관안정성이 우수하다. 다른 한편으로 2가전구체는 안정성이 우수한 만큼 낮은 증기압을 극복하기 위해 리간드에 플루오르를 주로 치환하여 증기압을 높이는데 플루오르는 성장하는 박막의 접착력을약하게 하는 단점을 가진다. 하지만 본 연구에 사용된 Cu(dmamb)2는 리간드에 플루오르를 포함하지 않으며, 따라서 고품질의 박막을 용이한성장환경에서 제조할 수 있는 장점들을 제공한다. 비활성가스 분위기에서 2가전구체는 열에너지에 의해 리간드의 자가환원에따라 금속-리간드 분해가 발생한다. 하지만 수소분위기에서는수소가 환원제로 작용하여 리간드의 분해를 용이하게 하는 특징을 가지며 따라서 비활성분위기일 때 비해 낮은 성장온도를 가진다. 또한 수소는 잔류하는 리간드 및 불순물과 결합하여 휘발성화학종들을 생성하여 고순도의 구리박막제조를 가능하게한다.